Progress in Photovoltaics最新文献

{"title":"AI-Based PV Fault Detection: Benchmarking Indicators and Feature Selection Methods","authors":"Cristian Terrados-López,&nbsp;Diego Granados-López,&nbsp;Jesús-Marcos García-Alonso,&nbsp;David Gonzalez-Peña,&nbsp;Cristina Alonso-Tristán","doi":"10.1002/pip.70149","DOIUrl":"https://doi.org/10.1002/pip.70149","url":null,"abstract":"<p>This article presents a benchmarking of indicators for automated defect detection in photovoltaic modules based on I-V curves. The methodology is structured in three stages. First, an ideal defect-free I-V curve is generated through simulation to provide a reference for comparison with experimentally measured I-V data under standard test conditions. Second, several electrical and curve-shape indicators are computed to quantify the deviation between simulated and measured curves. Electrical parameters are expressed as ratios between experimental and simulated values, whereas curve-shape descriptors integrate the comparison directly into their formulation. Finally, a comprehensive feature selection strategy is applied; filter (Pearson correlation and Mutual Information) and wrapper methods (Recursive Feature Elimination, Permutation Importance, and Boruta) are tested across several machine learning classifiers, including Decision Trees, Support Vector Classifiers, K-nearest neighbors, Random Forests, Gradient Boosting, XGBoost, and LightGBM. The approach is evaluated using an experimental I-V curve database generated by the GdS-Optronlab research group. Results consistently discard indicators such as the open-circuit voltage ratio and short-circuit current ratio, while highlighting the current at the maximum power point ratio, the fill factor, and the mutual information of the maximum power point.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 12","pages":"1603-1616"},"PeriodicalIF":10.2,"publicationDate":"2026-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70149","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149311575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Sky Temperature Models on Photovoltaic Panel Energy Yield Estimation","authors":"Javier Solano,&nbsp;Zhixue Zheng,&nbsp;Michel Aillerie,&nbsp;Rémy Claverie","doi":"10.1002/pip.70136","DOIUrl":"https://doi.org/10.1002/pip.70136","url":null,"abstract":"<div>\u0000 \u0000 <p>The efficiency of photovoltaic (PV) panels, determined by irradiance and operating temperature, depends on thermal interaction with the environment. Solar radiation is the main thermal input, whereas energy conversion, convection, and radiation fluxes are the primary heat dissipation mechanisms. Radiation fluxes are based on boundary temperatures, such as ground and sky temperature, making accurate sky temperature estimation essential. However, despite its importance, there is limited work comparing the available models, which are often either very simplified or highly complex and adapted to specific geographic conditions. This article examines five sky temperature models and their impact on estimating the operating temperatures of PV panels. Experimental validation shows that variations in sky temperature estimates lead to significant differences in panel operating temperatures. Although the effect on energy generation estimates is smaller, the findings highlight the importance of accurate sky temperature models for better PV performance predictions. This study provides a basis for improving PV energy yield forecasts through enhanced sky temperature modeling.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 12","pages":"1515-1526"},"PeriodicalIF":10.2,"publicationDate":"2026-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149311985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Degradation of Crystalline Si-Based Solar Modules With Varying Material Combinations—Part I: Encapsulant Degradation","authors":"Robert Heidrich,&nbsp;Oscar Lacroix-Andrivet,&nbsp;Nikola Babić,&nbsp;Lasse Baldauf,&nbsp;Julia Rendon,&nbsp;Marko Jankovec,&nbsp;Marko Topič,&nbsp;Camille Bainier,&nbsp;Anton Mordvinkin,&nbsp;Hervé Vezin,&nbsp;Simon Pondaven,&nbsp;Ralph Gottschalg","doi":"10.1002/pip.70137","DOIUrl":"https://doi.org/10.1002/pip.70137","url":null,"abstract":"<p>This work is the first part of three studies dealing with the degradation of crystalline Si-based solar modules depending on the chosen material combination, whereby the focus of this work is on encapsulant degradation. Within the paper, solar modules based on ethylene-vinyl acetate (EVA) copolymer encapsulant and polyolefin elastomer (POE) encapsulant with different rear side encapsulations were artificially aged with UV irradiation (76.6 W/m² between 280 and 380 nm) in combination with 60% relative humidity at 85°C. In situ moisture measurements and simulations of oxygen diffusion were used to show how stressors are distributed in the module. Additive and polymer degradation was analyzed by the Fourier transform infrared spectroscopy (FTIR), Orbitrap mass spectrometry, and electron paramagnetic resonance (EPR). This approach made it possible to determine the degradation of the encapsulants in a spatially resolved manner depending on the presence of stressors and the consumption of additives. The findings reveal that degradation is heavily influenced by the microclimate within the module, which itself is affected by the material combinations used. It is shown that oxygen has a major influence on the degradation of POE, as it is essential for the formation of hydroperoxides. Furthermore, it becomes clear that EVA does not necessarily have to be inferior to the novel POE encapsulants if it is combined with the right rear side encapsulation.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 12","pages":"1527-1551"},"PeriodicalIF":10.2,"publicationDate":"2026-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70137","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149312455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photovoltaic Effect in a III-IV-V Compound Semiconductor","authors":"José M. Ripalda,&nbsp;Pablo Caño,&nbsp;Micaela Rodriguez-Peña,&nbsp;Miguel Angel Sevillano-Bendezú,&nbsp;Aurelia Trevisan,&nbsp;Raghavendra Juluri,&nbsp;Aitana Cano,&nbsp;Iván García,&nbsp;Alicia Gonzalo,&nbsp;Enrique Navarro,&nbsp;Jeronimo Buencuerpo,&nbsp;Paul Koenraad,&nbsp;Ana María Sanchez,&nbsp;Yolanda Gonzalez","doi":"10.1002/pip.70141","DOIUrl":"https://doi.org/10.1002/pip.70141","url":null,"abstract":"<p>We have studied the potential of (GaAs)\u0000<span></span><math>\u0000 <msub>\u0000 <mrow></mrow>\u0000 <mrow>\u0000 <mn>1</mn>\u0000 <mo>−</mo>\u0000 <mi>x</mi>\u0000 </mrow>\u0000 </msub></math>(Ge\u0000<span></span><math>\u0000 <msub>\u0000 <mrow></mrow>\u0000 <mrow>\u0000 <mn>2</mn>\u0000 </mrow>\u0000 </msub></math>)\u0000<span></span><math>\u0000 <msub>\u0000 <mrow></mrow>\u0000 <mrow>\u0000 <mi>x</mi>\u0000 </mrow>\u0000 </msub></math> alloys as a photovoltaic material. Solar cells and single crystal films have been grown by molecular beam epitaxy on GaAs (001) substrates. Even with a moderate Ge content (6.5%), a large reduction of the band gap is obtained (from 1.42 to 1 eV). Intense room temperature luminescence is found for n-type samples. Both n-type and p-type samples have high carrier densities, high compensation, and consequently low mobilities. X ray diffraction results indicate a large positive deviation from Vegard's law. Density functional modeling suggests that this deviation from Vegard's law is evidence of the formation of a true alloy, rather than a nanoscale mixture of GaAs and Ge domains. The latter possibility is also discarded by transmission electron microscopy. Energy dispersive x-ray spectroscopy indicates that films have As deficiency, even when using a 14 to 1 V/III flux ratio, presumably due to the presence of Ge at the surface inhibiting As incorporation. Cross-sectional scanning tunneling microscopy reveals the presence of vacancies and antisites. It is also found that Ge can substitute both Ga and As sites, with a prevalence of the former sites in n-type samples. Heterojunction solar cell devices were fabricated with 0.76-V open circuit voltage and an internal quantum efficiency above 40% at energies below the bandgap of the GaAs emitter.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 12","pages":"1552-1563"},"PeriodicalIF":10.2,"publicationDate":"2026-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70141","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149311685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temporal PV-Power of Rooftops and Facades in Urban Areas Based on Ray Tracing","authors":"Philip Kühne,&nbsp;Dennis Bredemeier,&nbsp;Christian Schläger,&nbsp;Tobias Wietler,&nbsp;Rolf Brendel","doi":"10.1002/pip.70148","DOIUrl":"https://doi.org/10.1002/pip.70148","url":null,"abstract":"<p>Distributed photovoltaics (PV) can significantly contribute to the reduction of carbon emissions in urban energy systems. Analyzing the integration of distributed PV in such energy systems requires time-resolved PV-power for the urban area. This work aims at providing easy to apply analytic models for calculating the time-resolved PV-power generation in urban areas while still accounting for shading. To develop them, we first simulate the hourly resolved power of PV-systems on facades and rooftops over an area of 22 km\u0000<span></span><math>\u0000 <msup>\u0000 <mrow></mrow>\u0000 <mrow>\u0000 <mn>2</mn>\u0000 </mrow>\u0000 </msup></math> by utilizing backward ray tracing. This area is distributed across three German cities: Paderborn, Hanover, and Cologne. Ray tracing allows us to account for shadowing and light reflections by surrounding buildings. We then calculate the installable power and the capacity factors of these urban areas. We do this as a function of a full-load hour threshold as we expect that over the course of time, PV-systems, even with fewer full-load hours, will be built. The results reveal similarities among the different cities. We can thus develop analytical models that estimate the installable power and capacity factors of a set of PV-systems in an urban area with little computationally effort, thereby enabling the fast calculation of the time-resolved PV-power. Our models are applicable for cities with similar latitudes of the cities investigated. We apply our models to a 45-km\u0000<span></span><math>\u0000 <msup>\u0000 <mrow></mrow>\u0000 <mrow>\u0000 <mn>2</mn>\u0000 </mrow>\u0000 </msup></math> region of Munich and compare the results against those obtained by using computational expensive ray tracing. For PV-systems with more than 600 full-load hours, we observe deviations in the installable power \u0000<span></span><math>\u0000 <mo>&lt;</mo>\u0000 <mspace></mspace>\u0000 <mn>12</mn>\u0000 <mo>%</mo></math>, whereas the time-averaged error of the capacity factors is \u0000<span></span><math>\u0000 <mo>&lt;</mo>\u0000 <mspace></mspace>\u0000 <mn>10</mn>\u0000 <mo>%</mo></math>. We further find that considering shadowing and light reflections from surrounding buildings is important. For PV-systems with more than 600 full-load hours in Paderborn, Hanover, and Cologne, not doing so can cause an overestimation of the installable power by a factor of up to 5 and a time-averaged error of the capacity factors \u0000<span></span><math>\u0000 <mo>&lt;</mo>\u0000 <mspace></mspace>\u0000 <mn>25</mn>\u0000 <mo>%</mo></math>.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 12","pages":"1590-1602"},"PeriodicalIF":10.2,"publicationDate":"2026-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70148","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149311376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impacts of Fermi Level Pinning at Hole-Selective Contacts in CdSeTe/CdTe Solar Cells","authors":"Ariful Islam,&nbsp;Nathan D. Rock,&nbsp;Kh. Aaditta Arnab,&nbsp;Nicholas Miller,&nbsp;James Becker,&nbsp;Michael A. Scarpulla","doi":"10.1002/pip.70145","DOIUrl":"https://doi.org/10.1002/pip.70145","url":null,"abstract":"<p>P-type doped CdTe free surfaces, Schottky contacts, and even interfaces with isostructural p-ZnTe frequently exhibit downward band bending and moderate to high recombination velocities. Fermi level pinning by donor-like states can explain these band diagram features, as well as CdTe-based solar cell characteristics such as first quadrant rollover in current–voltage (J-V) versus temperature (JVT). Parasitic downward band bending also produces voltage-dependent photocurrent collection, producing fill factor (FF) efficiency losses, J-V dark/light non-superposition (or “J-V take-off”), and irregularities in J_sc–V_oc and suns–V_oc measurements. Herein, we develop a device physics model of state-of-the-art CdSeTe/CdTe solar cells consistent with known characterization of materials and devices, including the optical, thermalization, and trapping effects of band tail states and isolated defects. We use this model to demonstrate that Fermi-level pinning at the p-ZnTe/p-CdSeTe hole contact by donor-like defects reproduces the aforementioned observables, and conclude that (for contemporary few-μm absorber thicknesses and low mobilities) it primarily affects FF rather than V_oc, with removal of donor-like interface defects increasing the simulated FF from 74.8% to 76.6%. We investigate the performance gains possible from hypothetical passivated, hole-selective layers at the ZnTe/CdTe interface, which eliminate the downwards band bending caused by donor-like defects. For thinner devices and larger minority carrier diffusion lengths, these strategies will become more important for continued efficiency improvements.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 12","pages":"1578-1589"},"PeriodicalIF":10.2,"publicationDate":"2026-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70145","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149311883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photovoltaics Literature Survey (No. 210)","authors":"Ziv Hameiri","doi":"10.1002/pip.70150","DOIUrl":"https://doi.org/10.1002/pip.70150","url":null,"abstract":"","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 12","pages":"1617-1622"},"PeriodicalIF":10.2,"publicationDate":"2026-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149310918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Screen-Printed Silver-Nickel Hybrid Contacts for SiOx/n+-Poly-Si Layers in TOPCon Solar Cells","authors":"Qinqin Wang,&nbsp;Yonggang Cao,&nbsp;Kaiyuan Guo,&nbsp;Siwen Gu,&nbsp;Wangping Wu,&nbsp;Lvzhou Li,&nbsp;Jianning Ding","doi":"10.1002/pip.70146","DOIUrl":"https://doi.org/10.1002/pip.70146","url":null,"abstract":"<div>\u0000 \u0000 <p>Tunneling Oxide Passivated Contact (TOPCon) solar cells have emerged as a dominant technology in the global photovoltaic market due to their superior efficiency and long-term stability. However, the metallization process continues to rely predominantly on costly silver (Ag) pastes, making cost reduction a prerequisite for their continued large-scale deployment. In this study, nickel (Ni) particles were strategically incorporated into conventional Ag pastes to reduce noble metal consumption without compromising device performance. To address the inherent challenges of Ni—namely its lower bulk conductivity and work function mismatch with the silicon emitter—the Ni/Ag weight ratio was systematically optimized. SEM and EDS analyses confirmed a highly uniform distribution of Ag and Ni within the printed features. Notably, the Ag-Ni hybrid paste exhibited enhanced rheological properties, yielding grid lines with a higher aspect ratio compared to benchmark pure-Ag pastes. High-resolution TEM images of the contact interface revealed a unique morphology where Ni particles were encapsulated by Ag colloids, preventing direct Ni-Si contact, whereas interfacial gaps were effectively filled by glass frit. At an optimized Ni content of 10 wt%, the solar cells demonstrated optimal performance, achieving an average contact resistivity of 2.79 mΩ.cm². In a mass-production environment, the fill factor (<i>FF</i>) and efficiency (<i>E</i>_<i>ff</i>) exhibited only minimal reductions of 0.36% and 0.1%, respectively, compared to the reference cell. The optimized cells maintained a high conversion efficiency of over 26.5%, with an open-circuit voltage of 0.744 V, a short-circuit current density of 41.47 mA/cm², and a <i>FF</i> of 87.10%. Furthermore, the robust reliability in internal cell-level testing exhibited less than 5% performance degradation after a 48-h damp heat test under the conditions of 45°C/95% RH. These results demonstrate a viable pathway toward cost-effective metallization for next-generation TOPCon solar cells.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 12","pages":"1564-1577"},"PeriodicalIF":10.2,"publicationDate":"2026-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149311943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Steady-State Performance Measurements of State-of-the-Art Perovskite Solar Cells","authors":"Yongjie Jiang,&nbsp;Xiting Lang,&nbsp;Luolei Shi,&nbsp;Kaitian Mao,&nbsp;Fengchun Cai,&nbsp;Zhiyuan Cao,&nbsp;Enhao Zhang,&nbsp;Yangyang Gou,&nbsp;Minghui Li,&nbsp;Tengzuo Huang,&nbsp;Zhenhai Yang,&nbsp;Jixian Xu,&nbsp;Jichun Ye,&nbsp;Chuanxiao Xiao","doi":"10.1002/pip.70044","DOIUrl":"https://doi.org/10.1002/pip.70044","url":null,"abstract":"<div>\u0000 \u0000 <p>Reliable steady-state testing protocols are crucial for accurately evaluating the performance of perovskite solar cells. In this study, we systematically compare the asymptotic P_MAX scan and the maximum power point tracking (MPPT) method to assess their effectiveness in steady-state efficiency measurements. We introduce the current density standard deviation factor as a stability criterion in the asymptotic P_MAX scan, and implement a convergence amplitude to regulate the voltage adjustment speed toward the maximum power point. There is a possible tendency that the performance of state-of-the-art perovskite solar cells improved in the asymptotic P_MAX scan in low-to-high voltage directions. Numerical device simulations reveal that this improvement is due to a reduction in the trap state density in both the perovskite bulk and at the interfaces. We further compare asymptotic P_MAX scans conducted in both low-to-high and high-to-low voltage directions, demonstrating their strong consistency and repeatability on state-of-the-art perovskite solar cells. Our results show that the steady-state P_MAX obtained from the asymptotic P_MAX scan closely matches, but can be slightly higher than, that from MPPT. This work provides a comprehensive evaluation of steady-state testing methods for perovskite solar cells, offering a foundation for more accurate performance characterization and certification.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 11","pages":"1391-1400"},"PeriodicalIF":10.2,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149177174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Regulation of Vapor-Deposited Perovskite by Rubidium Chloride for Efficient and Stable Inverted Perovskite Solar Cells","authors":"Qiong Xu,&nbsp;Yicheng Qian,&nbsp;Qian Zhao,&nbsp;Zhixin Ren,&nbsp;Jinzhao Li,&nbsp;Yuan Qiu,&nbsp;Shougen Yin,&nbsp;Huanqi Cao","doi":"10.1002/pip.70055","DOIUrl":"https://doi.org/10.1002/pip.70055","url":null,"abstract":"<div>\u0000 \u0000 <p>Vapor-phase deposition techniques widely adopted in the coating and semiconductor industry are facilitating the consolidation and market penetration of perovskite solar cells (PSCs). However, the efficiency of inverted p-i-n PSCs prepared by vapor methods lags far behind that of solution methods. The multidimensional defects at the buried interface of the perovskite layer could be considered the largest obstacle to improving the photovoltaic performance of vapor-processed devices, particularly in devices prepared by vapor-solid-reaction methods. In this study, a two-step thermal evaporation method is adopted to fabricate the perovskite precursor film. An ultrathin layer of RbCl is preburied at the bottom of the precursor film, and then RbCl and PbI₂ are co-evaporated. The introduced RbCl achieves a concurrent passivation effect towards multidimensional defects: (1) The predeposited RbCl layer reacts with PbI₂, forming an ultrathin dielectric layer of RbPbI_xCl_3-x, which acts as crystallization nuclei, thereby effectively reducing the void defect density at the buried interface; (2) the RbCl doped in the bulk phase reacts with excess PbI₂ to form (PbI₂)₂RbCl, further improving the structural stability of perovskites. The optimized device exhibited an improved fill factor of up to 82.91% and a power conversion efficiency of 22.28%, making it a leading value among vapor-processed inverted PSCs. Under ambient conditions, the packaged device retained 95% of the initial efficiency after 1200 h of output, proving that the synergistic passivation strategy results in a significant effect on improving device stability.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 11","pages":"1416-1425"},"PeriodicalIF":10.2,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149177285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}