Progress in Photovoltaics最新文献

Photovoltaics Literature Survey (No. 198)

IF 8 2区材料科学

Progress in Photovoltaics Pub Date : 2025-03-04 DOI: 10.1002/pip.3902

Ziv Hameiri

引用次数: 0

Erratum to “Investigation on Effects of the Laser-Enhanced Contact Optimization Process With Ag Paste in a Boron Emitter for n-TOPCon Solar Cell”

IF 8 2区材料科学

Progress in Photovoltaics Pub Date : 2025-02-16 DOI: 10.1002/pip.3898

{"title":"Erratum to “Investigation on Effects of the Laser-Enhanced Contact Optimization Process With Ag Paste in a Boron Emitter for n-TOPCon Solar Cell”","authors":"","doi":"10.1002/pip.3898","DOIUrl":"https://doi.org/10.1002/pip.3898","url":null,"abstract":"\u0000 Wang, Q, Guo, K, Gu, S, Huang, W, Wu, W, and Ding, J. Investigation on Effects of the Laser-Enhanced Contact Optimization Process With Ag Paste in a Boron Emitter for n-TOPCon Solar Cell. Progress in Photovoltaics. 2025; 33: 294–308.In Section 3.3 “I–V Parameters,” the text “a 0.28 mA/cm2 increase in Jsc” was incorrect. This should have read: “a 0.08 mA/cm2 increase in Jsc.”In Paragraph 2 of the “Conclusion” section, the text “a 0.28 mA/cm2 increase in Jsc” was incorrect. This should have read: “a 0.08 mA/cm2 increase in Jsc”.We found that the data of the article are inconsistent with Table 2; the data in the table are correct; an error occurred while writing.We apologize for this error.","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 4","pages":"595"},"PeriodicalIF":8.0,"publicationDate":"2025-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3898","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143554910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photovoltaics Literature Survey (No. 197)

IF 8 2区材料科学

Progress in Photovoltaics Pub Date : 2025-02-10 DOI: 10.1002/pip.3887

Ziv Hameiri

引用次数: 0

Efficiency Enhancement of CZTSSe Solar Cells via Thermal Treatment of (Zn, Mg)O Buffer Layers for Improving Crystallinity and Reducing Point Defects

IF 8 2区材料科学

Progress in Photovoltaics Pub Date : 2025-01-31 DOI: 10.1002/pip.3890

Yafei Wang, Junsu Han, Shengye Tao, Liangzheng Dong, Qianming Gong, Hanpeng Wang, Mengyao Jia, Zhihao Wu, Maria Baranova, Jihui Zhou, Ming Zhao, Daming Zhuang

{"title":"Efficiency Enhancement of CZTSSe Solar Cells via Thermal Treatment of (Zn, Mg)O Buffer Layers for Improving Crystallinity and Reducing Point Defects","authors":"Yafei Wang, Junsu Han, Shengye Tao, Liangzheng Dong, Qianming Gong, Hanpeng Wang, Mengyao Jia, Zhihao Wu, Maria Baranova, Jihui Zhou, Ming Zhao, Daming Zhuang","doi":"10.1002/pip.3890","DOIUrl":"https://doi.org/10.1002/pip.3890","url":null,"abstract":"<div>\u0000 \u0000 The application of (Zn, Mg)O buffer layers significantly improves the energy band alignment and the interface quality of the heterojunction of CZTSSe solar cells, leading to a breakthrough in power conversion efficiency (PCE). However, (Zn, Mg)O thin films prepared by sputtering typically exhibit poor crystallinity, limiting their application. Rapid thermal processing (RTP) and substrate heating during the sputtering are investigated to address this issue. Our study demonstrates the effectiveness of RTP in reducing oxygen vacancies (VO) and adsorbed oxygen (Oad). Furthermore, it is identified that both thermal treatments increase the MgZn/(MgZn + Zn) ratio of (Zn, Mg)O thin films, thereby increasing their band gap. A notable improvement in the device performance of CZTSSe solar cells, particularly in fill factor (FF) and open-circuit voltage (VOC), is achieved by adopting optimal thermal treatment processes. Power conversion efficiencies (PCEs) of 12.4% and 12.3% are obtained through RTP and substrate heating, which are remarkably improved compared with the untreated CZTSSe solar cells with the maximum PCE of 9.5%. Notably, 12.4% is the highest PCE for CZTSSe solar cells with (Zn, Mg)O buffers to date.\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 4","pages":"580-590"},"PeriodicalIF":8.0,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143555219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing Photovoltaic Soiling Loss Predictions in Louisiana: A Comparative Study of Measured and Modeled Data Using a Novel Approach

IF 8 2区材料科学

Progress in Photovoltaics Pub Date : 2025-01-30 DOI: 10.1002/pip.3891

Deepak Jain Veerendra Kumar, Kenneth A. Ritter III, Johnathan Richard Raush, Farzad Ferdowsi, Raju Gottumukkala, Terrence Lynn Chambers

{"title":"Optimizing Photovoltaic Soiling Loss Predictions in Louisiana: A Comparative Study of Measured and Modeled Data Using a Novel Approach","authors":"Deepak Jain Veerendra Kumar, Kenneth A. Ritter III, Johnathan Richard Raush, Farzad Ferdowsi, Raju Gottumukkala, Terrence Lynn Chambers","doi":"10.1002/pip.3891","DOIUrl":"https://doi.org/10.1002/pip.3891","url":null,"abstract":"Previous studies have shown that soiling losses on photovoltaic (PV) modules can lead to reduced power output of up to 80% in PV systems. Therefore, accurate determination of soiling loss plays a crucial role in predicting PV output and ensuring optimized cleaning schedules. The study focused on measuring soiling loss at a 1.1 MW outdoor testing facility in Louisiana, United States, using a DustIQ device, a commercially available soiling sensor. The maximum soiling loss recorded for DustIQ Sensor 1 was 7.5% on August 27, 2023, during the dry season. The measured data was fitted using the well-established Kimber and HSU models (based on PM2.5 and PM10) by optimizing the least squares error, resulting in observed mean absolute percentage error (MAPE) of approximately 0.82% and 0.78%, respectively. One feature of these models is that it is assumed that the solar panels will be completely cleaned after a rain event that reaches a set threshold limit. However, in-field testing at the site shows that assumption to be flawed, because the soiling ratio did not return to 1 or 100% even after significant rainfall events. To address this, improved versions of the Kimber and HSU models were developed to more accurately represent the recovery of the soiling ratio after rainfall events. The results demonstrated significant improvements, with the modified Kimber models achieving reductions in root mean squared error (RMSE) of 23%, 13%, and 1% compared to the optimized Kimber model, while the modified HSU model exhibited a 12% reduction in RMSE over the optimized HSU model. The overall MAPE was less than 1% for all models.","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 4","pages":"560-579"},"PeriodicalIF":8.0,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3891","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143555177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tips and Tricks for a Good Encapsulation for Perovskite-Based Solar Cells

IF 8 2区材料科学

Progress in Photovoltaics Pub Date : 2025-01-24 DOI: 10.1002/pip.3888

Quiterie Emery, Lea Dagault, Mark Khenkin, Nikoleta Kyranaki, Wander Max Bernardes de Araújo, Ulas Erdil, Matthias Demuylder, Stephane Cros, Rutger Schlatmann, Bernd Stannowski, Carolin Ulbrich

{"title":"Tips and Tricks for a Good Encapsulation for Perovskite-Based Solar Cells","authors":"Quiterie Emery, Lea Dagault, Mark Khenkin, Nikoleta Kyranaki, Wander Max Bernardes de Araújo, Ulas Erdil, Matthias Demuylder, Stephane Cros, Rutger Schlatmann, Bernd Stannowski, Carolin Ulbrich","doi":"10.1002/pip.3888","DOIUrl":"https://doi.org/10.1002/pip.3888","url":null,"abstract":"Encapsulation is a critical topic to ensure the successful implementation of perovskite photovoltaics. Recently, vacuum lamination has been shown as a promising approach that combines compatibility with current industrial processes in conventional photovoltaic (PV) manufacturing and suitability to achieve good results with perovskites. Here, we explore some of the attractive encapsulation materials in terms of their ability to prevent moisture ingress, withstand elevated temperatures, and have suitable mechanical properties to avoid thermomechanical issues. We utilized the previously suggested concept of the “perovskite test,” an optical test with simple sample fabrication, for evaluating encapsulation quality and validated the findings with the full solar cell stack. Unsurprisingly, encapsulants without an edge sealant showed insufficient protection from moisture. Ionomer in combination with butyl edge seal showed the best barrier properties; however, this stack led to rapid delamination of the cell layers in thermal cycling tests. Configuration with only edge sealant does not have such an issue in principle (no mechanical stress applied), but an absence of the polymer in the stack is unfavorable in terms of optical design and sometimes showed perovskite degradation that we assign to trapped moisture in the butyl itself. Polyolefin with butyl edge sealant is not free of degradation but showed the most promising compromise by passing the damp heat test and showing fewer issues in the thermal cycling experiments. In general, our material study and optimization presented in this manuscript show that a holistic approach is needed when choosing an optimal encapsulation scheme for perovskite devices.","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 4","pages":"551-559"},"PeriodicalIF":8.0,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3888","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143555190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photovoltaics Literature Survey (No. 196)

IF 8 2区材料科学

Progress in Photovoltaics Pub Date : 2025-01-15 DOI: 10.1002/pip.3886

Ziv Hameiri

引用次数: 0

Damp-Heat–Induced Degradation of Lightweight Silicon Heterojunction Solar Modules With Different Transparent Conductive Oxide Layers

IF 8 2区材料科学

Progress in Photovoltaics Pub Date : 2025-01-12 DOI: 10.1002/pip.3880

Kai Zhang, Oleksandr Mashkov, Muhammad Ainul Yaqin, Bernd Doll, Andreas Lambertz, Karsten Bittkau, Weiyuan Duan, Ian Marius Peters, Christoph J. Brabec, Uwe Rau, Kaining Ding

{"title":"Damp-Heat–Induced Degradation of Lightweight Silicon Heterojunction Solar Modules With Different Transparent Conductive Oxide Layers","authors":"Kai Zhang, Oleksandr Mashkov, Muhammad Ainul Yaqin, Bernd Doll, Andreas Lambertz, Karsten Bittkau, Weiyuan Duan, Ian Marius Peters, Christoph J. Brabec, Uwe Rau, Kaining Ding","doi":"10.1002/pip.3880","DOIUrl":"https://doi.org/10.1002/pip.3880","url":null,"abstract":"Lightweight photovoltaic applications are essential for diversifying the solar energy supply. This opens up vast new scenarios for solar modules and significantly boosts the capacity of renewable energy. To ensure high efficiency and stability of the solar modules, several challenges need to be overcome. Degradation due to elevated temperature and/or humidity is a critical concern for silicon heterojunction (SHJ) solar modules. Here, we investigated the stability and degradation mechanism of encapsulated cells with lightweight configurations where the cells are based on three different types of transparent-conductive oxide (TCO): indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), and a combination of ITO/AZO/ITO under humid and thermal environmental conditions. A damp heat (DH) test at a temperature of 85°C and relative humidity (RH) of 85% was performed on lightweight modules for 1000 h. Our results show that AZO is the most susceptible to DH degradation. The AZO film was damaged by the combined effects of moisture ingress and delamination of the interconnection foil, resulting in a decrease in the conductivity of the AZO film, leading to a dramatic increase in Rs and a decrease in FF of the modules. Consequently, moisture has a greater chance of percolating through the damaged AZO layer into the a-Si:H passivation layer, causing passivation degradation, which leads to an increase in recombination, resulting in a decrease in Voc of the modules. In particular, after capping the AZO film with an ITO film, the efficiency loss of the ITO/AZO/ITO module was significantly reduced. This suggests that the ITO film could be a promising protective capping layer for the AZO-based solar cells.","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 4","pages":"541-550"},"PeriodicalIF":8.0,"publicationDate":"2025-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3880","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143555096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Boron-Doped Polysilicon Passivating Contacts Achieving a Single-Sided J0 of 4.0 fA/cm2 Through a Two-Step Oxidation Process

IF 8 2区材料科学

Progress in Photovoltaics Pub Date : 2024-12-30 DOI: 10.1002/pip.3884

Yali Ou, Haojiang Du, Na Lin, Zunke Liu, Wei Liu, Mingdun Liao, Zhenhai Yang, Shihua Huang, Yuheng Zeng, Jichun Ye

{"title":"Boron-Doped Polysilicon Passivating Contacts Achieving a Single-Sided J0 of 4.0 fA/cm2 Through a Two-Step Oxidation Process","authors":"Yali Ou, Haojiang Du, Na Lin, Zunke Liu, Wei Liu, Mingdun Liao, Zhenhai Yang, Shihua Huang, Yuheng Zeng, Jichun Ye","doi":"10.1002/pip.3884","DOIUrl":"https://doi.org/10.1002/pip.3884","url":null,"abstract":"<div>\u0000 \u0000 Tunnel oxide passivating contacts with boron-doped polysilicon (i.e., p-type TOPCon) hold substantial potential for application in the devices with higher efficiency, that is, back-junction (BJ) or all-back-contact (BC) solar cells. However, achieving excellent passivation for p-type TOPCon remains a challenge. In this study, we propose a two-step oxidation (TSO) method using low-temperature oxidated silicon oxide (SiOx) with a post-nitrous oxide/hydrogen plasma (N2O/H2) treatment to prepare high-quality ultrathin SiOx and achieve highly passivated p-type TOPCon. Through optimization of plasma treatment pressure and annealing conditions, we achieve excellent passivation and contact properties of double-sided p-type TOPCon, with an implied open-circuit voltage (iVoc) of 740 mV, marking the highest publicly reported value for p-type TOPCon. Additionally, we achieve a single-sided saturation recombination current density (J0,s) of 4.0 fA/cm2 and a contact resistivity of 22 mΩ cm2. Semi-finished back-junction solar cell incorporating TSO-SiOx exhibits excellent passivation performance with an iVoc of 744 mV, demonstrating the feasibility of device applications. The two-step oxidation method proposed in this work enhances the passivation performance of p-type TOPCon, offering a technique with significant potential for industrial applications in preparing high-quality p-type TOPCon.\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 4","pages":"531-540"},"PeriodicalIF":8.0,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143554999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Understanding Localized Current Leakage in Silicon-Based Heterojunction Solar Cells

IF 8 2区材料科学

Progress in Photovoltaics Pub Date : 2024-12-24 DOI: 10.1002/pip.3882

Hanbo Tang, Hao Lin, Genshun Wang, Qiao Su, Tingting Wang, Chaowei Xue, Liang Fang, Xixiang Xu, Can Han, Pingqi Gao

{"title":"Understanding Localized Current Leakage in Silicon-Based Heterojunction Solar Cells","authors":"Hanbo Tang, Hao Lin, Genshun Wang, Qiao Su, Tingting Wang, Chaowei Xue, Liang Fang, Xixiang Xu, Can Han, Pingqi Gao","doi":"10.1002/pip.3882","DOIUrl":"https://doi.org/10.1002/pip.3882","url":null,"abstract":"<div>\u0000 \u0000 Current leakage through localized stacked structures, comprising opposite types of carrier-selective transport layers, is a prevalent issue in silicon-based heterojunction solar cells. Nevertheless, the behavior of this leakage region remains unclear, leading to a lack of guidance for structural design, material selection and process sequence control, thereby causing fluctuations of device performance. This study elucidates current-voltage characteristics, influential factors, and underlying carrier transport mechanism of the leakage region with different stacking sequences and explores their impact on various configurations of solar cells. Characteristics of the leakage region resembling Esaki diodes or reverse diodes are revealed, along with the bias conditions of the leakage region at different locations across the solar cell. The findings suggest that modulating the behavior of the leakage region is feasible for improving device performance or serving specific purposes. This work provides guidance for the design and assessment of current leakage in the edge region of front and back contact cells, in the gap region of conventional back-contacted cells, as well as in the tunneling region of tunneling back-contacted cells and tandem cells.\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 4","pages":"522-530"},"PeriodicalIF":8.0,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143555188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0