Progress in Photovoltaics最新文献

{"title":"Photovoltaics Literature Survey (No. 201)","authors":"Ziv Hameiri","doi":"10.1002/pip.70019","DOIUrl":"https://doi.org/10.1002/pip.70019","url":null,"abstract":"","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 10","pages":"1154-1158"},"PeriodicalIF":7.6,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145181567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photovoltaics Literature Survey (No. 200)","authors":"Ziv Hameiri","doi":"10.1002/pip.3932","DOIUrl":"https://doi.org/10.1002/pip.3932","url":null,"abstract":"","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 8","pages":"918-922"},"PeriodicalIF":8.0,"publicationDate":"2025-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144646864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization, Accelerated Life Testing, and Finite Element Modeling of Low Temperature Solder Wire Interconnect Degradation Mechanisms","authors":"James Y. Hartley,&nbsp;David C. Miller,&nbsp;Soňa Uličná,&nbsp;Nick Bosco,&nbsp;Peter Hacke","doi":"10.1002/pip.70011","DOIUrl":"https://doi.org/10.1002/pip.70011","url":null,"abstract":"<div>\u0000 \u0000 <p>Low-temperature soldered wire interconnection (LTSWI) is a technology utilizing many interconnect wires carried on a polymer foil to form electrical connections against cell gridlines without a separate soldering process. In this work, LTSWI module samples were characterized for material properties and assembly dimensions and subjected to accelerated aging experiments to induce degradation. A finite element analysis model was developed based on characterization results, to analyze internal stressors during environmental exposures. The polymer foil contains polyethylene terephthalate and low-density polyethylene layers, and solder composition was tin bismuth, which notably was not metallurgically bonded to cell gridlines. High temperature accelerated exposures created power loss up to 9% in minimodule samples, with fill factor losses implicating contact degradation. Posttest characterization identified solder-gridline cracking and wire-cell separation as contributing mechanisms. Finite element modeling demonstrated that wire-to-cell contact is maintained by polymer contraction post lamination but is reversible, resulting in contact loss and wire separation during high temperature exposure. Simulations also detected in-plane wire-to-cell displacements, driven by surrounding polymer motion in response to high temperatures and mechanical load. We hypothesize that the propensity for wire movement during environmental exposure damages the not-metallurgically bonded wire-gridline interface and contributes to LTSWI contact degradation. Because distinct from thermal expansion mismatches which damage traditionally soldered modules, current test protocols are likely not applying the intended acceleration factors to LTSWI modules. This work highlights how construction-specific accelerated testing may be needed for nontraditional module designs and provides a starting point for accurate LTSWI life assessment.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 10","pages":"1139-1153"},"PeriodicalIF":7.6,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145181503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Uncertainty of Climate Specific Energy Rating (CSER) of PV Modules in Accordance With IEC 61853","authors":"Werner Herrmann,&nbsp;Giorgio Bardizza,&nbsp;Gabi Friesen,&nbsp;Stefan Riechelmann,&nbsp;Harald Müllejans","doi":"10.1002/pip.70007","DOIUrl":"https://doi.org/10.1002/pip.70007","url":null,"abstract":"<div>\u0000 \u0000 <p>The energy rating of PV modules is related to its energy yield performance in specific reference climates. In contrast to the nominal output power, which is related to the standard test conditions (STC), the energy rating considers the interaction of the PV module characteristics with the reference climate conditions. The following PV module parameters affect the amount of produced energy: (a) temperature behaviour, (b) low irradiance behaviour, (c) spectral responsivity and (d) angular responsivity. To compare the energy yield performances of PV modules, the standard series IEC 61853 defines a specific metric, which describes the energy yield performance of a PV module by a single parameter, the Climate Specific Energy Rating (CSER). Whereas recent studies have focused on the harmonization of CSER calculation methods, our study provides a methodology for the calculation of the expanded CSER uncertainty (<i>k</i> = 2). As inputs, we use the measurement uncertainties of PV module parameters, stated by TÜV Rheinland test laboratory. For the six tabulated reference climates of IEC 61853, our work has shown that a CSER uncertainty in the range of ±2%–±2.3% can be achieved. The main contribution in the range of 80% is related to the uncertainties of output power measurements with solar simulators under variable module temperatures and irradiances (<i>G</i>–<i>T</i> matrix). The following are the uncertainties associated with PV module temperature calculation and the measurement uncertainty of the angular response curve. Both are dependent on the reference climate under consideration. The contributions of uncertainties in connection with spectral responsivity and data processing together appear to be of minor importance.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 10","pages":"1124-1138"},"PeriodicalIF":7.6,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145181500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Gaussian Process Regression IV Model for PV Outdoor Data","authors":"Timon S. Vaas,&nbsp;Bart E. Pieters,&nbsp;Evgenii Sovetkin,&nbsp;Andreas Gerber,&nbsp;Uwe Rau","doi":"10.1002/pip.70012","DOIUrl":"https://doi.org/10.1002/pip.70012","url":null,"abstract":"&lt;p&gt;Outdoor data are essential to study the reliability of PV modules and systems. Each electrical performance measure is dependent on the conditions the measurement is conducted at and, therefore, needs to be considered in the context of dynamically changing outdoor conditions. In this paper, we introduce a statistical model designed to analyze PV outdoor data. This model uses a timeseries of current-voltage (&lt;i&gt;IV&lt;/i&gt;) characteristics, alongside meteorological data, including plane-of-array irradiance (\u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;msub&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;G&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mtext&gt;POA&lt;/mtext&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msub&gt;&lt;/math&gt;) and module temperature (\u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;msub&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;T&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mtext&gt;Mod&lt;/mtext&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msub&gt;&lt;/math&gt;). The model aims to utilize all available information to predict the respective performance measure as well as its uncertainty at arbitrary conditions and times. First, to ensure its quality and relevance, a suitable filtering approach is applied to the &lt;i&gt;IV&lt;/i&gt; curves, \u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;msub&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;G&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mtext&gt;POA&lt;/mtext&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msub&gt;&lt;/math&gt; and \u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;msub&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;T&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mtext&gt;Mod&lt;/mtext&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msub&gt;&lt;/math&gt; data from nine modules from five locations (Arizona USA, Germany, India, Italy, and Saudi Arabia) observed for over 2 years. Following this, we utilize the extended solar cell parameters (ESPs), a descriptive model for &lt;i&gt;IV&lt;/i&gt; characteristics using 10 parameters. The ESPs, then, undergo a principal component analysis (PCA), which transforms the EPSs into a set of uncorrelated principal components (PCs). Individual Gaussian process regressions (GPRs) are then trained on these principal components (PCs). Once the GPRs are trained, the model is capable of reproducing and predicting the complete &lt;i&gt;IV&lt;/i&gt; characteristics at any given time \u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mi&gt;t&lt;/mi&gt;&lt;/math&gt;, for specified values of \u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;msub&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;G&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mtext&gt;POA&lt;/mtext&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msub&gt;&lt;/math&gt; and \u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;msub&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mi&gt;T&lt;/mi&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mtext&gt;Mod&lt;/mtext&gt;\u0000 &lt;/mrow&gt;\u0000 ","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 10","pages":"1093-1108"},"PeriodicalIF":7.6,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70012","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145181678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Assessment of Indium-Free Transparent Conductive Oxide Back Contacts for High-Efficiency Ultra-Thin Cu (In,Ga)Se2 Solar Cells Down to 250 nm","authors":"Fabien Mollica,&nbsp;Marie Jubault,&nbsp;Frederique Donsanti,&nbsp;Muriel Bouttemy,&nbsp;Arnaud Etcheberry,&nbsp;Negar Naghavi","doi":"10.1002/pip.70013","DOIUrl":"https://doi.org/10.1002/pip.70013","url":null,"abstract":"<div>\u0000 \u0000 <p>This work examines the feasibility and performance impact of replacing the usual molybdenum back contact with indium-free transparent conductive oxides (TCOs) like fluorine-doped tin oxide (SnO₂:F) and aluminum-doped zinc oxide (ZnO:Al) for ultra-thin Cu (In,Ga)Se₂ (CIGS) solar cells (250–450 nm). Motivated by indium scarcity and cost reduction, these TCOs are evaluated for their figure of merit, stability under Se atmosphere, Na diffusion permeability, and band alignment with CIGS absorbers. Using simulations, prototype fabrication, and comprehensive characterizations, the compatibility of these TCOs with CIGS absorbers is assessed. Solar cells with thicknesses of 450 and 250 nm are fabricated. Their performance was compared under both rear and front illumination, as well as with the use of reflectors. A record efficiency of 8.6% with front illumination is achieved for a 250-nm CIGS absorber using a gold back reflector with SnO₂:F, single-step CIGS deposition, and no heavy alkalines doping. The best rear-illuminated efficiencies are obtained with ZnO:Al back contacts, reaching 6% for a 250-nm CIGS, with only a 9% loss in <i>J</i>_<i>sc</i> compared to front illumination, confirming a lower surface recombination rate at the ZnO:Al/CIGS interface compared to Mo/CIGS or SnO₂:F/CIGS interfaces.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 10","pages":"1109-1123"},"PeriodicalIF":7.6,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145181677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"One-Sun AM0 36% Solar Cell Enhanced by Engineered 2.15 eV Homojunction Top Subcell","authors":"Wei Zhang,&nbsp;Ge Li,&nbsp;Hongbo Lu,&nbsp;Xinyi Li,&nbsp;Renbo Lei,&nbsp;Qiaobing Yang,&nbsp;Mengyan Zhang,&nbsp;Guoning Xu","doi":"10.1002/pip.70010","DOIUrl":"https://doi.org/10.1002/pip.70010","url":null,"abstract":"<div>\u0000 \u0000 <p>Optimal bandgap combination to deliberately split the solar spectra is the key to high efficiency multijunction solar cell design. III-V Multijunction solar cells with more than four junctions require an inverted top subcell with specific bandgap wider than 2.1 eV to absorb the short-wavelength photons (&lt; 600 nm) effectively. (Al_xGa_1-x)_0.5In_0.5P alloy lattice-matched to GaAs substrate, with x ≥ 0.31, is usually preferred. However, it has been a challenge to achieve high performance inverted 2.1 eV AlGaInP homojunction solar cells for the severe decrease of short-wavelength (especially for wavelength &lt; 450 nm) quantum efficiency. Thus, until now, a compromise structure replacing the n-type emitter with a narrow bandgap material (for instance, 1.91 eV GaInP), which is called the heterojunction solar cell, is widely employed. However, this structure would decrease the open-voltage for increasing energy loss of short-wavelength photons and limit the multijunction device efficiency. Here, we investigate the underlying mechanisms besides those commonly known results and present arguments that two new mechanisms should be attributed to the degradation of short-wavelength quantum efficiency: (1) bulk AlGaInP quality degradation resulting from the underneath AlInP window surface morphology and (2) additional optical absorption of the intermediate layers formed by III-V atom intermixing. Based on these findings, an interface Induced lifetime decrease model, and an intermixing layer model are introduced into the numerical simulations to time-resolved photoluminescence and internal quantum efficiency, achieving nice agreement between measured and modelled data with reasonable input parameters. Consequently, two strategies, 1) thermal treatment for AlInP layers and 2) minor compressive strain in P—containing materials, are suggested not only for the inverted 2.1 eV AlGaInP homojunction solar cells but also for the inverted 2.1 eV/1.7 eV/1.4 eV triple-junction solar cell. The subcells with these two strategies show higher quantum efficiency than the normal ones despite the bandgaps changing from 2.12 eV to 2.15 eV (e.g., IQE@400 nm increases from 69% to 76%). Meanwhile, the fill factor of inverted triple junction solar cells is slightly enhanced from 0.85 to 0.87. This improved triple junction solar cell is bonded with a 1.1 eV/0.83 eV dual-junction solar cell to form a five-junction solar cell, achieving an outstanding one-sun AM0 efficiency of 36.06% (Voc:4.904 V, Jsc:11.51 mA/cm², FF:0.8645). The efficiency gain, compared with those previously reported, is attributed to the thermalization loss reduction of short-wavelength photons for using a high spectral response 2.15 eV homojunction top cell.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 10","pages":"1068-1080"},"PeriodicalIF":7.6,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145181574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing Power Generation Efficiency of CdTe Photovoltaic Cells With Si-CQDs@PVA Thin Films: A Green and Effective Approach","authors":"Wenjie Liu,&nbsp;Zengwu Ma,&nbsp;Xianjin Jin,&nbsp;Lin Lin,&nbsp;Jinlong Zheng,&nbsp;Woonming Lau","doi":"10.1002/pip.3917","DOIUrl":"https://doi.org/10.1002/pip.3917","url":null,"abstract":"<div>\u0000 \u0000 <p>Integrating carbon quantum dots (CQDs) into the CdTe photovoltaic (PV) cell is anticipated to significantly enhance its power generation performance. This improvement could lead to reduced building energy consumption and lower carbon emissions, particularly when applied to CdTe PV façades widely in modern architecture. In this study, silicon-functionalized carbon quantum dots (Si-CQDs) were synthesized using a one-step hydrothermal method, and their optical properties, morphological structure, and surface composition were thoroughly characterized. When the reaction was conducted at 180°C and maintained at room temperature for 10 h, the Si-CQDs achieved a high quantum yield of 86.67% for blue light emission with the addition of 6.6 mL of N-[3-(Trimethoxysilyl)propyl]ethylenediamine (KH-792). The Si-CQDs exhibited stable fluorescence over a 2-month storage period and 48 h of ultraviolet (UV) irradiation. Subsequently, Si-CQDs@PVA thin films were fabricated using a scraping coating method to investigate their effects as a luminescent downshifting (LDS) layer on the performance of CdTe PV cells. It was found that with the application of a 1.5-mL thin-film slurry, the short-circuit current density (<i>J</i>_<i>sc</i>) increased from 0.82 to 0.84 mA·cm⁻², and the maximum power output (<i>P</i>_<i>max</i>) increased from 0.192 to 0.201 W, corresponding to a 4.76% enhancement in power generation efficiency.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 10","pages":"1056-1067"},"PeriodicalIF":7.6,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145181573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Understanding ERE and iVOC Metrics for Graded CdSeTe Absorbers","authors":"Dmitry Krasikov,&nbsp;Darius Kuciauskas,&nbsp;Patrik Ščajev,&nbsp;Rouin Farshchi,&nbsp;Kevin McReynolds,&nbsp;Igor Sankin","doi":"10.1002/pip.3922","DOIUrl":"https://doi.org/10.1002/pip.3922","url":null,"abstract":"<div>\u0000 \u0000 <p>PL-based external radiative efficiency (ERE) and implied open-circuit voltage (iV_OC) metrics were introduced for thin-film solar absorbers to better understand the voltage deficit and diagnose losses in solar cells. Traditionally, elevated ERE and iV_OC measurements are associated with diminished recombination within the solar device, a rationale heavily reliant on the assumption of a uniform bandgap and high carrier mobilities in the absorber. Recently, very low mobilities in CdSeTe absorbers (&lt; 1 cm²/(V·s)) were measured using the light-induced transient grading technique. In this study, we use a detailed numerical model of iV_OC to investigate the possible reasons of elevated iV_OC in realistic CdSeTe absorbers with a graded Se profile. In particular, we examine how the bandgap nonuniformity and the reduced hole mobility in graded CdSeTe absorbers affect iV_OC measurements. We show that high iV_OC may result from inflated quasi-Fermi level splitting in the high-Se region in the front part of a CdSeTe absorber with slow hole transport. We reproduce the experimentally reported 360 mV increase in iV_OC–V_OC gap with reduced doping using a model with sub-1 cm²/(V·s) hole mobility in the high-Se region. Based on our results, we conclude that the iV_OC metric (or ERE metric) should not be used as a sole metric of CdSeTe absorber quality. We discuss possible ways to extract useful information from the iV_OC–V_OC gap by supplementing the front-side illumination measurements with back-side illumination measurements.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 10","pages":"1081-1092"},"PeriodicalIF":7.6,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145181575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lessons Learned From Establishing a Rooftop Photovoltaic System Crowdsourced by Students and Employees at Aarhus University","authors":"Marta Victoria,&nbsp;Zhe Zhang,&nbsp;Gorm B. Andresen,&nbsp;Parisa Rahdan,&nbsp;Ebbe K. Gøtske","doi":"10.1002/pip.70009","DOIUrl":"https://doi.org/10.1002/pip.70009","url":null,"abstract":"<p>Energy communities are promoted in the European legislation as a strategy to enable citizen participation in the energy transition. Solar photovoltaic (PV) systems, due to their distributed nature, present an opportunity to create such communities. At Aarhus University (Denmark), we have established an energy community consisting of a 98-kW rooftop solar PV installation, crowdsourced by students, and employees of the university. The participants can buy one or several shares of the installation (which is divided into 900 shares), the electricity is consumed by the university, and the shareowners receive some economic compensation every year. The road to establishing this energy community has been rough, and we have gathered many lessons. In this manuscript, we present the 10 largest challenges which might arise when setting up a university energy community and our particular approach to facing them. Sharing these learnings might pave the way for those willing to establish their own energy community. We also include policy recommendations at the European, national, and municipality levels to facilitate the deployment of energy communities.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 10","pages":"1046-1055"},"PeriodicalIF":7.6,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70009","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145181563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}