Progress in Photovoltaics最新文献

{"title":"Review of the Progressing Role of Solar Photovoltaics in Energy Transition Scenarios Over Five Decades of 100% Renewable Energy Systems Research","authors":"Christian Breyer,&nbsp;Siavash Khalili,&nbsp;Dennis Bredemeier,&nbsp;Arnulf Jäger-Waldau,&nbsp;Dominik Keiner,&nbsp;Marta Victoria","doi":"10.1002/pip.70135","DOIUrl":"https://doi.org/10.1002/pip.70135","url":null,"abstract":"<p>Five decades of 100% renewable energy (RE) systems research established a vibrant research field that increasingly builds on solar photovoltaics (PV). A database on 100% RE systems articles has been used to analyse the changing role of solar PV from 1975 to 2025. Analysing the database, 29 milestone articles have been identified that introduced a new element for the role of solar PV within the research field. These milestones were reached in all decades, and the four largest groups are (i) around visionary scoping of the role of PV, (ii) advances in PV system applications, (iii) expanding economic insights and (iv) methodological advancements leading to more realistic descriptions of PV in energy-industry systems. In most advanced 100% RE system analyses, solar PV can be described in up to eight PV system applications, in hourly resolution, in interconnected multi-node study designs, covering all sectors spanning power, heat, transport, industry, desalination and carbon dioxide removal, with comprehensive power-to-X routes, and broad flexibility portfolios, such as grids, storage and demand response with diversified sector coupling and energy conversion routes. However, even a basic PV system differentiation of ground-mounted utility-scale and rooftop PV is far from standard as only 16% of all studies include this differentiation. On a global level, studies find increasingly a PV share of 60%–80% in total primary energy supply around mid-century or beyond with a 61% projected average across transition studies. Solar PV has emerged as a core solution for a sustainable civilisation on its path towards the Solar Age.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1322-1336"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70135","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148872044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Chemical Composition Evolution and Electrical Performance Degradation of TOPCon Solar Cells Under UV Exposure","authors":"Xinliang Lou,&nbsp;Ning Yang,&nbsp;Zhiqiang Fu,&nbsp;Daming Chen,&nbsp;Yifeng Chen,&nbsp;Pierre J. Verlinden","doi":"10.1002/pip.70132","DOIUrl":"https://doi.org/10.1002/pip.70132","url":null,"abstract":"<div>\u0000 \u0000 <p>The evolution of the chemical composition and the degradation of the electrical performance of tunnel oxide passivated contact (TOPCon) solar cells under ultraviolet (UV) exposure are analyzed in this paper. Compared to the rear-side structure (SiO_x/n⁺-poly-Si/Al₂O₃/SiN_x) of TOPCon solar cells, the front-side structure (SiN_x/Al₂O₃) exhibits an inferior resistance to UV with a dramatic rise of J₀. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) and depth profiling X-ray photoelectron spectroscopy (XPS) are used to characterize and to monitor the chemical composition of the front-side structure during UV60 exposure. The free hydrogen concentration in the passivation layers grows during UV illumination, and the breakage of N–H bonds in SiN_<i>x</i> layer is found to be the second source of potential hydrogen loss besides the well-known Si–H bonds breaking. Meanwhile, Al–O bonds are also found to be dissociated by UV exposure, accompanying the transformation from Al₂O₃ to Al–OH and the valence states variation of silicon. The free oxygen diffuses into SiN_x/Al₂O₃ interface and Al₂O₃/Si interface, with the concentration of oxygen increasing. The XPS spectra also demonstrate that numerous oxygen vacancies form in Al₂O₃ layer after UV60 illumination, indicating that the film quality is getting damaged. Hydrogen-related degradation and oxygen-related degradation have a joint effect on the deterioration of surface recombination, with the relative decline of 3.46% for V_oc after UV60 exposure. In addition, the increase of the front contact resistivity contributes to the relative drop of 2.82% for fill factor. Eventually, a dramatic power conversion efficiency degradation of 6.72% is observed for TOPCon solar cells after UV60 illumination.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1313-1321"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148872111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative Analysis of Degradation Mechanisms in Mainstream n-Type Silicon Photovoltaic Modules","authors":"Qingfei Cang,&nbsp;Xu Dong,&nbsp;QinQin Wang,&nbsp;Yunzhe Yan,&nbsp;Zhulin Zhang,&nbsp;Mingren Yao,&nbsp;Ningyi Yuan,&nbsp;Lvzhou Li,&nbsp;Jianning Ding","doi":"10.1002/pip.70127","DOIUrl":"https://doi.org/10.1002/pip.70127","url":null,"abstract":"<div>\u0000 \u0000 <p>This study presents a comparative analysis of three major failure modes in n-type photovoltaic modules—hotspot effects, ultraviolet-induced degradation (UVID), and potential-induced degradation (PID)—to address critical reliability concerns. Using standardized IEC testing protocols, we systematically evaluated multiple module technologies. Key findings reveal the following: (1) the correlation between technological configurations and hotspot temperature distribution under extreme shading conditions; (2) the relative susceptibility of tunnel oxide passivating contact (TOPCon), heterojunction with intrinsic thin-layer (HJT), and back-contact (BC) prototypes to UVID; and (3) distinct PID mechanisms and degradation pathways at the front versus rear surfaces across different architectures. The results provide essential theoretical and empirical insights to support the development of more reliable photovoltaic products.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1203-1212"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148872112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass","authors":"Aesha P. Patel,&nbsp;Ryan Muzzio,&nbsp;Matthew R. Young,&nbsp;Robert Morrissey,&nbsp;Suresh Chaulagain,&nbsp;B. Edward Sartor,&nbsp;Prabodika N. Kaluarachchi,&nbsp;Christian Velez,&nbsp;Joshua A. Brown,&nbsp;Bishal Shrestha,&nbsp;Joel N. Duenow,&nbsp;Stephen Glynn,&nbsp;Michael J. Heben,&nbsp;Zhaoning Song,&nbsp;Nikolas J. Podraza,&nbsp;Adam B. Phillips,&nbsp;Randy J. Ellingson,&nbsp;Matthew O. Reese","doi":"10.1002/pip.70128","DOIUrl":"https://doi.org/10.1002/pip.70128","url":null,"abstract":"<p>Deployment of photovoltaics in space requires devices that combine high-efficiency, low areal mass, and resilience to harsh environments. Historically, high-efficiency multijunction III–V materials have dominated space power systems; however, their high cost and limited manufacturing throughput motivate the exploration of scalable alternatives. While CdTe-based thin-film photovoltaics offer an attractive option, their performance on non-conventional substrates can suffer from front contact instability under higher-temperature processing. Here, the role of front contact chemistry in limiting cell performance is investigated using CdTe-based devices fabricated on 150 μm thick Ceria-doped space-qualified 0214 Corning glass. A matrix of four transparent conducting oxides (TCOs: CTO, AZO, ITO, IZO) combined with two n-type emitters (MZO, IGO) reveals chemical stability at the front interface—rather than absorber composition alone—governs recombination losses, voltage deficits, and device reproducibility. Chemically stable front contact combinations suppress elemental diffusion and interfacial degradation, resulting in significantly improved carrier lifetimes and junction quality. These insights are validated through record-certified Cd(Se,Te) cell efficiencies of 18.4% under AM1.5G and 16.2% under AM0 illumination on ultra-thin glass. Beyond CdTe, this work provides a general framework for the rational selection of TCO/emitter interfaces in superstrate thin-film photovoltaics, including emerging technologies like metal halide perovskites, while enabling high-efficiency, lightweight photovoltaics for space applications.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1277-1291"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70128","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148871886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Robust Performance Loss Rate Calculation for Photovoltaic Systems in High Latitude Locations","authors":"Lauri Karttunen,&nbsp;Väinö Anttalainen,&nbsp;Sami Jouttijärvi,&nbsp;Juha A. Karhu,&nbsp;Hugo Huerta,&nbsp;Samuli Ranta,&nbsp;Anders V. Lindfors,&nbsp;Kati Miettunen","doi":"10.1002/pip.70130","DOIUrl":"https://doi.org/10.1002/pip.70130","url":null,"abstract":"<p>Photovoltaic (PV) production grows rapidly in the Nordics, but literature on calculating long-term PV performance losses remains limited in these conditions, leading to inaccurate yield estimations and economic losses. To fill this knowledge gap, this contribution (1) shows typical PV performance characteristics, (2) obtains performance loss rates (PLRs) from multiple systems, and (3) assesses the best practices of PLR calculation under these conditions. For these objectives, we compared various methods for all steps of PLR calculation, including data filters, performance metrics, aggregation intervals, and statistical models for five systems (with 2.5–6 years of data) across Finland, from 60° to 67° N. Dark winters and snow coverage caused gaps and anomalies to the performance time series during wintertime, resulting in unrealistic PLRs. Excluding these anomalies with performance threshold filter improved the results. As the different methods can drastically affect the PLR value, an ensemble method consisting of an assessment of average PLR with over 700 calculation approaches was validated to be essential in identifying robust PLRs. Using this ensemble method, the system PLR estimates ranged from \u0000<span></span><math>\u0000 <mo>−</mo></math>0.41%/year to \u0000<span></span><math>\u0000 <mo>−</mo></math>2.65%/year. The data and codes are made publicly available, contributing to open access of PV datasets and allowing wider application of the PLR methodology.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1256-1276"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70130","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148872056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pioneering High-Performance in Next Generation Hybrid Tin Perovskite Solar Cells: A Novel Dual Absorber Paradigm With GAx (FA-Cs)1-xSnI2Br","authors":"Poonam Subudhi,&nbsp;Deepak Punetha,&nbsp;A. Rahul Narasimhan","doi":"10.1002/pip.70131","DOIUrl":"https://doi.org/10.1002/pip.70131","url":null,"abstract":"<div>\u0000 \u0000 <p>Tin-based halide perovskites have emerged as environmentally benign alternatives to lead-based counterparts for next-generation photovoltaics. This study presents the design and optimization of dual-absorber perovskite solar cells with the architecture ITO/ETL/GA_x (FA_0.8Cs_0.2)_1-xSnI₂Br/(CsSnI₃/MASnI₃/FASnI₃)/HTL/Au. The proposed structure strategically integrates a wide-bandgap top absorber with three narrow-bandgap bottom absorbers to achieve complementary light harvesting and enhanced charge generation and collection. Device simulations using SCAPS-1D involved systematic optimization of absorber layer thickness, defect densities, interfacial properties, charge transport layers, operating temperature, and back contact work function. The FASnI₃ cell achieved Voc of 1.04 V, Jsc of 29.77 mA/cm², FF of 83.81%, and PCE of 26.05%. For MASnI₃, Voc was 1.01 V, Jsc 33.59 mA/cm², FF 85.78%, and PCE 29.00%. The CsSnI₃ device delivered the best performance with Voc of 0.99 V, Jsc 34.88 mA/cm², FF 86.00%, and PCE 29.64%. Analyses including Mott–Schottky profiling, recombination mapping, J-V curves, QE, and capacitance studies provided insights into device physics. TiO₂ emerged as the most suitable electron transport layer due to favorable band alignment, while CuSbS₂ served as an effective hole transport layer. These results highlight the potential of lead-free, tin-based dual-absorber perovskite solar cells as efficient and sustainable candidates for future photovoltaic technologies.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1292-1312"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148872008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photovoltaics Literature Survey (No. 209)","authors":"Ziv Hameiri","doi":"10.1002/pip.70142","DOIUrl":"https://doi.org/10.1002/pip.70142","url":null,"abstract":"","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1337-1342"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148872018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Demonstration of InGaAs/GaAs/GaAsP Stepped Quantum Well Solar Cell","authors":"Yu Wen,&nbsp;Liangsheng Xie,&nbsp;Jun Xiong,&nbsp;Jiale Zheng,&nbsp;Qin Zhang,&nbsp;Junfeng Yang,&nbsp;Yoshiaki Nakano","doi":"10.1002/pip.70118","DOIUrl":"https://doi.org/10.1002/pip.70118","url":null,"abstract":"<div>\u0000 \u0000 <p>In the present work, a series of multiple-stepped quantum well (MSQW) solar cells were demonstrated, with GaAs step layers inserted between strain-balanced InGaAs wells and GaAsP barriers. We have studied carrier recombination dynamics and carrier escape kinetics from the wells, comparing the MSQW with the normal multiple quantum well (MQW). Carrier recombination rate was examined by time-resolved photoluminescence (PL), and a longer carrier lifetime was observed for the MSQW. Carrier escape from the wells was also investigated in terms of temperature-dependent PL, and smaller thermal activation energy was also observed for the MSQW. Carrier radiative recombination loss was investigated by bias-dependent PL, and it was found to be smaller for the MSQW than for the normal MQW. Such advantages of the MSQW allowed us to stack a sufficient number of quantum wells to increase short-circuit current without degrading fill factor. The simulation has also been performed in triple-junction GaInP/GaAs/Ge solar cell devices with InGaAs/GaAs/GaAsP stepped quantum wells. When standard GaInP/GaAs/Ge solar cells had optimal active layer thickness, the conversion efficiency increased from 24.2% to 33.4%. The positive effects of embedded quantum wells are proven to help improve triple-junction GaInP/GaAs/Ge solar cell performance.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1213-1224"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148871874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Cu(In,Ga)S2 Thin Films–Based Solar Cells Deposited on In2O3: Sn Transparent Back Contacts for Rear-Side Illumination Applications","authors":"Pineau Fabien,&nbsp;Bidaud Thomas,&nbsp;Arzel Ludovic,&nbsp;Choubrac Léo,&nbsp;Lepetit Thomas,&nbsp;Barreau Nicolas","doi":"10.1002/pip.70125","DOIUrl":"https://doi.org/10.1002/pip.70125","url":null,"abstract":"<div>\u0000 \u0000 <p>This study investigates the optoelectronic characteristics of solar cells based on wide bandgap Cu(In,Ga)S₂ (CIGS) absorbers, co-evaporated onto glass substrates covered with 100 nm-thick indium tin oxide (ITO) back contact. Devices based on absorbers with different thicknesses (ranging from 320 to 1580 nm) were investigated. Structural characterizations confirmed that all of the films were made of large grains, crystallized in the chalcopyrite structure with no secondary phases. It has been observed that the performance of the cells with front-side illumination improves with increasing CIGS thickness, mainly because of increased short-circuit current (<i>J</i>_SC). In contrast, the opposite trend is observed for rear-side illumination, further suggesting a hindered collection of carriers generated close to the ITO/CIGS interface. The modelling of quantum efficiency using e-ARC tool and Gartner theory suggests that all absorbers, independently of their thickness, are nearly fully depleted. In addition, they all exhibit a region with a low collection of photogenerated carriers at the vicinity of the ITO/CIGS interface. It is proposed that this area results from the consumption of gallium during gallium oxide formation at the ITO/CIGS interface.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1225-1237"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148872167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing Na and Rb Incorporation Along With Bandgap Grading for High Efficiency Ultra-Thin CIGSe Solar Cells","authors":"Christoph Rath,&nbsp;Tristan Köhler,&nbsp;Martina Schmid","doi":"10.1002/pip.70126","DOIUrl":"https://doi.org/10.1002/pip.70126","url":null,"abstract":"<p>This work investigates the role of Na and Rb incorporation in ultra-thin Cu(In,Ga)Se₂ (CIGSe) solar cells, focusing on performance optimization. By systematically varying the Rb content and combining predeposited Na with postdeposited Rb, we identify the optimal configuration, achieving efficiencies of 11.72% on Mo and 10.48% on ITO. Comprehensive structural and electrical characterization reveals that Rb not only enhances the absorber quality through superior grain boundary passivation, following a Na–Rb exchange mechanism, but also modifies the CIGSe/CdS interface by influencing the absorber surface and Cd incorporation. While combined Na and Rb postdeposition treatments suppress Cd incorporation, predeposited Na can promote it. In both cases, the added Na and Rb support the creation of an ordered vacancy compound (OVC) layer, which improves the band alignment. Temperature-dependent IV (IVT) measurements distinguish between interface and bulk recombination, revealing a Schottky barrier originating from possible GaO_x formation at the ITO/CIGSe interface, as well as a current-blocking behavior at the CIGSe/CdS interface at low temperatures related to Rb. Tuning the Ga distribution further enhances device performance: An In-Ga-In sequence in the first stage of absorber growth suppresses Rb/CdS-related barriers and further promotes alkali metal incorporation, supporting OVC layer growth and thereby possibly improving band alignment. A mechanistic model showcasing this interplay between Na, Rb, OVC, and Cd is made for visualizing the structural formation during absorber growth. These results underline the relevance of the first systematic Rb analysis in ultra-thin CIGSe solar cells and highlight the synergistic potential of combining alkali metal doping with Ga grading to improve ultra-thin CIGSe solar cells.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1238-1255"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70126","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148872124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}