Progress in Photovoltaics最新文献

{"title":"Industrial-Scale Silicon Heterojunction Photovoltaic Module Towards 25% Efficiency Enabled by High-Quantum-Yield CaSrSiO4:Ce3+ Inorganic Downshifting Materials","authors":"Zehua Sun,&nbsp;Zhengyue Xia,&nbsp;Dengzhou Yan,&nbsp;Yuhui Ji,&nbsp;Wei Ji,&nbsp;Wenjun Gu,&nbsp;Changlin Ding,&nbsp;Chao Zhang,&nbsp;Tao Chen,&nbsp;Fangdan Jiang,&nbsp;Chen Yang,&nbsp;Wenzhu Liu,&nbsp;Guoqiang Xing,&nbsp;Jian Yu","doi":"10.1002/pip.3908","DOIUrl":"https://doi.org/10.1002/pip.3908","url":null,"abstract":"<div>\u0000 \u0000 <p>The market uptake of silicon heterojunction (SHJ) solar modules is projected to increase rapidly, which is expected to play a significant role in future sustainability. However, a major barrier to the mass production of SHJ solar modules is significant power degradation under ultraviolet (UV) irradiation. Here, we reported a 98.13% high-quantum yield and highly reliable CaSrSiO₄:Ce³⁺ UV-to-blue–violet downshifting (UV-DS) inorganic phosphor for photovoltaic applications, which could minimize UV-induced degradation, the levelized cost of energy, and the generation of photovoltaic module waste. The CaSrSiO₄:Ce³⁺ inorganic phosphor was synthesized via a solid-state reaction method, where Ce³⁺ ions preferentially occupy the 7-coordinated Ca site. As a proof of concept, an outstanding output power of 776.2 W and a module efficiency of 24.99% were achieved on 3.1 m² industrial-scale module. Only 2.49% power degradation was observed after 180 kWh/m² UV irradiation. A statistical lifetime assessment based on UV irradiance data of Chinese geographical locations proven that UV-DS encapsulants significantly enhanced the long-term stability of modules, with better power generation performance and economic and environmental characteristics. Our study offered a blueprint for designing SHJ photovoltaic modules sustainably and strategically for targeting geographic markets, mitigating one of the environmental risks associated with SHJ modules and accelerating practical application.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 6","pages":"678-688"},"PeriodicalIF":8.0,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Avoiding Fill Factor Losses in Cu(In,Ga)Se2 as a Bottom Cell in a Tandem Structure","authors":"Ana Kanevce,&nbsp;Stefan Paetel,&nbsp;Rico Gutzler,&nbsp;Dominik Bagrowski,&nbsp;Dimitrios Hariskos,&nbsp;Theresa Magorian Friedlmeier","doi":"10.1002/pip.3905","DOIUrl":"https://doi.org/10.1002/pip.3905","url":null,"abstract":"<div>\u0000 \u0000 <p>This work aims to define the optimization criteria for Cu(In,Ga)Se₂ (CIGS) as a bottom cell in a tandem structure, and to emphasize the differences from optimizing the CIGS when operating alone. Reproducing the single-cell recipes and only lowering the band gap is insufficient to optimize the bottom cell. We identified that the lack of high-energy photons, which are absorbed by the top cell, can cause a severe fill factor (FF) loss, and thus diminish the photovoltaic performance. With nonoptimized buffer layers (CdS and ZnMgO), S-shaped current-density-voltage (JV) characteristics leading to a low FF and poor performance can be observed. The S shape can be eliminated within seconds of white-light exposure and does not return for hours. Therefore, this does not pose a significant problem for single-cell operation. In the bottom-cell application, as only the low-energy part of the spectrum is available, the properties of the buffer layer(s) become crucial and additional optimization is necessary. Filtered JV measurements after white-light exposure could lead to overseeing important optimization steps. We discuss the causes for an S-shaped curve under filtered illumination, pinpoint the bottlenecks in the bottom-cell performance, and present a way to mitigate the losses.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 6","pages":"669-677"},"PeriodicalIF":8.0,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Spatially Resolved Evaluation of Accelerated Environmental Aging on Emerging Polypropylene-Based Photovoltaic Backsheets Using Raman Spectroscopy","authors":"Ashlee Aiello,&nbsp;Stefan Mitterhofer,&nbsp;Jan Obrzut,&nbsp;Karissa L. Jensen,&nbsp;Patryk Wąsik,&nbsp;Chiara Barretta,&nbsp;Gernot Oreski,&nbsp;Stephanie S. Watson,&nbsp;Lipiin Sung,&nbsp;Xiaohong Gu","doi":"10.1002/pip.3904","DOIUrl":"https://doi.org/10.1002/pip.3904","url":null,"abstract":"<div>\u0000 \u0000 <p>Accelerated aging was used to assess environmental degradation in emerging co-extruded polypropylene (PP)-based backsheets under three different environmental conditions (65°C/20% relative humidity (RH), 75°C/20% RH, and 75°C/50% RH). Although differential scanning calorimetry did not measure crystallinity changes with exposure, spatially resolved Raman spectroscopy identified crystallinity increases in the core layer of aged samples, indicating a heterogeneous postcrystallization process. The Raman results were in agreement with synchrotron-based microfocused wide-angle X-ray scattering measurements. Cross-sectional nanoindentation was used to correlate localized crystallinity shifts with changes in Young's modulus. A similar trend was found where increased modulus was measured in the core layer, supporting the relationship between modulus and crystallinity. Finally, dielectric characterization was used to assess the impact of these material property changes on performance. While changes in the backsheet material properties and dielectric performance were observed with accelerated aging, these shifts generally equilibrated with time, indicating overall stability in response to environmental stressors. Additionally, the identified heterogeneous material property changes indicate that spatially resolved crystallinity measurements may be a valuable early failure indicator to be used in the assessment of PV backsheet long-term durability.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 5","pages":"652-662"},"PeriodicalIF":8.0,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143762385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Performance of Perovskite Solar Cells Through the Application of Pure Natural Centella asiatica Extract Additives","authors":"Lung-Chien Chen,&nbsp;Qiming Zhao","doi":"10.1002/pip.3907","DOIUrl":"https://doi.org/10.1002/pip.3907","url":null,"abstract":"<div>\u0000 \u0000 <p>This study initially employs Cs₀.₀₅FA₀.₈₁MA₀.₁₄PbI₂.₈₆Cl₀.₁₄ as the active layer for perovskite solar cells and explores the impact of using different concentrations of natural <i>Centella asiatica</i> (CICA) extracts mixed with chlorobenzene (CB) as anti-solvent in the one-step method of perovskite film preparation. <i>Centella asiatica</i> is rich in natural antioxidants and asiatic acid. It contains many hydroxyl ions, which are capable of capturing uncoordinated heavy metal Pb atoms. We found that devices made with 15% <i>Centella asiatica</i> extract mixed with CB achieved the highest power conversion efficiency (PCE), increasing from 14.3% to 18.5%. Moreover, the devices maintained 85% of their initial efficiency after being stored in a glove box for 25 days.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 5","pages":"644-651"},"PeriodicalIF":8.0,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photovoltaics Literature Survey (No. 198)","authors":"Ziv Hameiri","doi":"10.1002/pip.3902","DOIUrl":"https://doi.org/10.1002/pip.3902","url":null,"abstract":"","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 4","pages":"591-594"},"PeriodicalIF":8.0,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143554197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the Synthesis of Cu2(Zn,Cd)SnS4 at High Temperatures as a Route for High-Efficiency Solar Cells","authors":"Outman El Khouja,&nbsp;Yuancai Gong,&nbsp;Alex Jimenez-Arguijo,&nbsp;Maykel Jimenez Guerra,&nbsp;Axel Gon Medaille,&nbsp;Romain Scaffidi,&nbsp;Arindam Basak,&nbsp;Cristian Radu,&nbsp;Denis Flandre,&nbsp;Bart Vermang,&nbsp;Sergio Giraldo,&nbsp;Marcel Placidi,&nbsp;Zacharie Jehl Li-Kao,&nbsp;Aurelian Catalin Galca,&nbsp;Edgardo Saucedo","doi":"10.1002/pip.3899","DOIUrl":"https://doi.org/10.1002/pip.3899","url":null,"abstract":"<p>The present research explores for the first time the intricate relationship between sulfurization temperature at unusual high temperatures (up to 700°C) and the structural/optoelectronic properties of Cu₂(Zn,Cd)SnS₄ (CZCTS) thin films, synthesized via a two-step sequential process involving the precursor film deposition using aprotic molecular ink followed by thermal treatment in sulfur atmosphere. X-ray diffraction patterns confirms the tetragonal structure. Scanning Electron Micrographs revealed significant grain growth, with grain sizes increasing from ~0.3 μm at 620°C to ~1.5 μm at 680°C, effectively reducing grain boundary recombination. Energy dispersive X-ray spectroscopy demonstrated a Cu-poor and Zn-rich composition, with a consistent Cd incorporation of ~3.7 at%. Raman spectroscopy showcases the homogeneity and purity of the CZCTS crystalline structure. Precise control of the sulfurization temperature plays a crucial role in determining the photovoltaic characteristics of CZCTS-based solar cells. By increasing the grain size and preventing the thermal decomposition of the CZTS phase, the photovoltaic performance peaked at a sulfurization temperature of 680°C, achieving a power conversion efficiency (PCE) of 10.4%, with an open-circuit voltage of 0.701 V, a short-circuit current density of 24.3 mA/cm² and a fill factor of 60.8%. External quantum efficiency reached a maximum of 83.3% at 580 nm. The bandgap of the CZCTS absorber was determined to be 1.48 eV, optimal for photovoltaic applications. However, further increasing the sulfurization temperature to 700°C resulted in a lower PCE of 8.5%, attributed to interface degradation and secondary phase formation. Temperature-dependent current–voltage measurements revealed a reduction in recombination losses, with an activation energy of 1.24 eV at the CZCTS/CdS interface, indicating effective defect passivation by Cd incorporation. The optimized films, sulfurized at 680°C, displayed an absorber thickness of ~1.2 μm after sulfurization, providing efficient light absorption and charge transport. The findings not only emphasize the critical role of sulfurization temperature in engineering CZCTS film and subsequently their functionality but also provide valuable insights for fine tuning their performance in the field of photovoltaic applications.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 5","pages":"628-643"},"PeriodicalIF":8.0,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3899","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermodynamic Limit on the Open Circuit Voltage of Solar Cells","authors":"Tom Markvart","doi":"10.1002/pip.3903","DOIUrl":"https://doi.org/10.1002/pip.3903","url":null,"abstract":"<p>A new thermodynamic limit for the open circuit voltage of solar cells that includes thermalization is obtained in terms of photon entropy. A simple graphical construction makes it possible to link this limit to the existing limits for single junction cells due to Trivich and Flinn, Shockley and Queisser, Würfel, and the thermodynamic Carnot-type limit for hot-carrier solar cell. At the fundamental level, this limit points to similarity between photovoltaic and thermoelectric energy conversion.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 5","pages":"663-665"},"PeriodicalIF":8.0,"publicationDate":"2025-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3903","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143761968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Erratum to “Investigation on Effects of the Laser-Enhanced Contact Optimization Process With Ag Paste in a Boron Emitter for n-TOPCon Solar Cell”","authors":"","doi":"10.1002/pip.3898","DOIUrl":"https://doi.org/10.1002/pip.3898","url":null,"abstract":"<p>\u0000 <span>Wang, Q</span>, <span>Guo, K</span>, <span>Gu, S</span>, <span>Huang, W</span>, <span>Wu, W</span>, and <span>Ding, J</span>. <span>Investigation on Effects of the Laser-Enhanced Contact Optimization Process With Ag Paste in a Boron Emitter for n-TOPCon Solar Cell</span>. <i>Progress in Photovoltaics</i>. <span>2025</span>; <span>33</span>: <span>294</span>–<span>308</span>.</p><p>In Section 3.3 “I–V Parameters,” the text “a 0.28 mA/cm² increase in <i>J</i>_<i>sc</i>” was incorrect. This should have read: “a 0.08 mA/cm² increase in <i>J</i>_<i>sc</i>.”</p><p>In Paragraph 2 of the “Conclusion” section, the text “a 0.28 mA/cm² increase in <i>J</i>_<i>sc</i>” was incorrect. This should have read: “a 0.08 mA/cm² increase in <i>J</i>_<i>sc</i>”.</p><p>We found that the data of the article are inconsistent with Table 2; the data in the table are correct; an error occurred while writing.</p><p>We apologize for this error.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 4","pages":"595"},"PeriodicalIF":8.0,"publicationDate":"2025-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3898","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143554910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photovoltaics Literature Survey (No. 197)","authors":"Ziv Hameiri","doi":"10.1002/pip.3887","DOIUrl":"https://doi.org/10.1002/pip.3887","url":null,"abstract":"","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 3","pages":"507-510"},"PeriodicalIF":8.0,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143380251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficiency Enhancement of CZTSSe Solar Cells via Thermal Treatment of (Zn, Mg)O Buffer Layers for Improving Crystallinity and Reducing Point Defects","authors":"Yafei Wang,&nbsp;Junsu Han,&nbsp;Shengye Tao,&nbsp;Liangzheng Dong,&nbsp;Qianming Gong,&nbsp;Hanpeng Wang,&nbsp;Mengyao Jia,&nbsp;Zhihao Wu,&nbsp;Maria Baranova,&nbsp;Jihui Zhou,&nbsp;Ming Zhao,&nbsp;Daming Zhuang","doi":"10.1002/pip.3890","DOIUrl":"https://doi.org/10.1002/pip.3890","url":null,"abstract":"<div>\u0000 \u0000 <p>The application of (Zn, Mg)O buffer layers significantly improves the energy band alignment and the interface quality of the heterojunction of CZTSSe solar cells, leading to a breakthrough in power conversion efficiency (PCE). However, (Zn, Mg)O thin films prepared by sputtering typically exhibit poor crystallinity, limiting their application. Rapid thermal processing (RTP) and substrate heating during the sputtering are investigated to address this issue. Our study demonstrates the effectiveness of RTP in reducing oxygen vacancies (V_O) and adsorbed oxygen (O_ad). Furthermore, it is identified that both thermal treatments increase the Mg_Zn/(Mg_Zn + Zn) ratio of (Zn, Mg)O thin films, thereby increasing their band gap. A notable improvement in the device performance of CZTSSe solar cells, particularly in fill factor (FF) and open-circuit voltage (<i>V</i>_OC), is achieved by adopting optimal thermal treatment processes. Power conversion efficiencies (PCEs) of 12.4% and 12.3% are obtained through RTP and substrate heating, which are remarkably improved compared with the untreated CZTSSe solar cells with the maximum PCE of 9.5%. Notably, 12.4% is the highest PCE for CZTSSe solar cells with (Zn, Mg)O buffers to date.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 4","pages":"580-590"},"PeriodicalIF":8.0,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143555219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}