Industrial-Scale Silicon Heterojunction Photovoltaic Module Towards 25% Efficiency Enabled by High-Quantum-Yield CaSrSiO4:Ce3+ Inorganic Downshifting Materials

The market uptake of silicon heterojunction (SHJ) solar modules is projected to increase rapidly, which is expected to play a significant role in future sustainability. However, a major barrier to the mass production of SHJ solar modules is significant power degradation under ultraviolet (UV) irradiation. Here, we reported a 98.13% high-quantum yield and highly reliable CaSrSiO₄:Ce³⁺ UV-to-blue–violet downshifting (UV-DS) inorganic phosphor for photovoltaic applications, which could minimize UV-induced degradation, the levelized cost of energy, and the generation of photovoltaic module waste. The CaSrSiO₄:Ce³⁺ inorganic phosphor was synthesized via a solid-state reaction method, where Ce³⁺ ions preferentially occupy the 7-coordinated Ca site. As a proof of concept, an outstanding output power of 776.2 W and a module efficiency of 24.99% were achieved on 3.1 m² industrial-scale module. Only 2.49% power degradation was observed after 180 kWh/m² UV irradiation. A statistical lifetime assessment based on UV irradiance data of Chinese geographical locations proven that UV-DS encapsulants significantly enhanced the long-term stability of modules, with better power generation performance and economic and environmental characteristics. Our study offered a blueprint for designing SHJ photovoltaic modules sustainably and strategically for targeting geographic markets, mitigating one of the environmental risks associated with SHJ modules and accelerating practical application.