Progress in Photovoltaics最新文献

{"title":"Annual Degradation Rates of Five Types of Photovoltaic Technologies Over 12 Years","authors":"Tetsuyuki Ishii,&nbsp;Yasuo Chiba,&nbsp;Minoru Akitomi,&nbsp;Ritsuko Sato,&nbsp;Sungwoo Choi,&nbsp;Atsushi Masuda","doi":"10.1002/pip.3925","DOIUrl":"https://doi.org/10.1002/pip.3925","url":null,"abstract":"<div>\u0000 \u0000 <p>The purpose of this study was to investigate the long-term reliability of various photovoltaic technologies in Japan under humid subtropical climatic conditions. The five investigated technologies were p-type aluminum back surface field (Al-BSF) single-crystalline silicon (p-type Al-BSF sc-Si), p-type Al-BSF multi-crystalline silicon (p-type Al-BSF mc-Si), copper indium gallium (di)selenide (CIGS), hydrogenated amorphous silicon (a-Si:H), and a-Si:H and hydrogenated microcrystalline silicon tandem (a-Si:H/μc-Si:H) photovoltaic modules. The monthly performance ratio (PR) was calculated based on the power outputs of the photovoltaic arrays and global solar irradiance in the same plane as the photovoltaic arrays, which were measured at 10-min intervals over 12 years. The PR was corrected to 25°C (PR_<i>T</i>=25) as defined by the standard test conditions. Furthermore, the power outputs of all the photovoltaic modules were measured by a pulsed solar simulator (indoor flash testing) from 2012 to 2019. The PR and PR_<i>T</i>=25 values showed that the annual degradation rates of the p-type Al-BSF sc-Si, p-type Al-BSF mc-Si, CIGS, a-Si:H/μc-Si:H, and a-Si:H photovoltaic modules were approximately 0.0%/year, 0.2%/year, 1.1%/year, 0.6%/year, and 1.2%/year, respectively, which were consistent with the results of the indoor flash testing. These results indicate that p-type Al-BSF sc-Si and mc-Si photovoltaic modules can show little annual degradation and should retain high, stable power generation performance for over 20 years. In contrast, the higher annual degradation rates of the investigated thin-film photovoltaic technologies suggest that they did not maintain performance of over 90% of the nominal power outputs even for 12 years.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 8","pages":"828-843"},"PeriodicalIF":8.0,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144647815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Traceable Efficiency Determination of Large-Area Perovskite on Silicon Tandem Modules—Insights From a Calibration Laboratories Perspective","authors":"David Chojniak,&nbsp;Alexandra Schmid,&nbsp;Jochen Hohl-Ebinger,&nbsp;Gerald Siefer,&nbsp;Stefan W. Glunz","doi":"10.1002/pip.3928","DOIUrl":"https://doi.org/10.1002/pip.3928","url":null,"abstract":"<p>As the perovskite on silicon solar cell technology strives towards commercialization, the need to produce large-area devices increases and so does the necessity to traceably determine their efficiency. However, suitable measurement procedures and consequently efficiencies of such devices are rarely published. Due to metastability and the two-terminal tandem architecture, high demands are set on measurement procedures and the equipment used. In this publication, we present a measurement procedure which is fully built on a light emitting diode (LED)-based solar simulator. Besides power measurements, the procedure includes a full module EQE measurement, determination of temperature coefficients as well as investigations under various spectral conditions. We therefore present an approach to conduct a complete tandem module calibration using a single measurement setup by utilizing the spectral variability of the LED solar simulator. The introduced procedure is exemplarily carried out on a large-area perovskite on silicon tandem module which achieves an efficiency of 25%.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 8","pages":"815-827"},"PeriodicalIF":8.0,"publicationDate":"2025-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3928","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144647866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Updated Simplified Energy Yield Model for Recent Photovoltaic Module Technologies","authors":"Anatoli Chatzipanagi,&nbsp;Nigel Taylor,&nbsp;Ismael Medina Suarez,&nbsp;Ana M. Martinez,&nbsp;Teodora S. Lyubenova,&nbsp;Ewan D. Dunlop","doi":"10.1002/pip.3926","DOIUrl":"https://doi.org/10.1002/pip.3926","url":null,"abstract":"<p>The European Commission's Photovoltaic Geographic Information System (PVGIS) uses a simplified solar energy yield model to provide quick and reliable data on the potential performance of photovoltaic (PV) systems. This study looks at the recalibration of the model for modern module technologies, using power matrix datasets produced by the European Solar test Installation (ESTI) for seven crystalline silicon (cSi), two cadmium telluride (CdTe) and three copper indium diselenide (CIS) modules. The results show that the PVGIS power performance model with updated coefficients can provide a good description of the power output of the modern crystalline silicon (cSi) modules, with a mean absolute bias error (MABE) of less than 1% in almost all cases, against an MABE of over 3.5% with the current coefficients. The updated coefficients allow the model to better capture the improved temperature coefficients and low light performance. As a result, there will be a slight increase in the energy yield estimates. For the thin film technologies, the updated coefficients allow for a more accurate description of current data sets, but more data for modules from recent production series would be desirable to further increase the model's applicability.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 8","pages":"905-917"},"PeriodicalIF":8.0,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3926","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144647797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photostable Inorganic Perovskite Absorber via Thermal Evaporation for Monolithic Perovskite/Perovskite/Silicon Triple-Junction Solar Cells","authors":"Yashika Gupta,&nbsp;Minasadat Heydarian,&nbsp;Maryamsadat Heydarian,&nbsp;Oussama Er-raji,&nbsp;Michael Günthel,&nbsp;Oliver Fischer,&nbsp;Clemens Baretzky,&nbsp;Patricia S. C. Schulze,&nbsp;Martin Bivour,&nbsp;Stefaan De Wolf,&nbsp;Stefan W. Glunz,&nbsp;Juliane Borchert","doi":"10.1002/pip.3923","DOIUrl":"https://doi.org/10.1002/pip.3923","url":null,"abstract":"<p>Monolithic perovskite/perovskite/silicon triple-junction solar cells have the potential to exceed the efficiency limits of perovskite/silicon dual-junction solar cells. However, the development of perovskite/perovskite/silicon triple-junction technology faces several significant hurdles, including the development and integration of a stable high bandgap perovskite absorber into the monolithic structure. Key issues include light-induced halide segregation in mixed halide high bandgap perovskites and the risk of solvent damage to underlying layers during top-cell deposition. To overcome these challenges, we developed a high bandgap, inorganic perovskite absorber, CsPbI₂Br, using thermal evaporation at room temperature, eliminating the need for post-deposition annealing. The resulting perovskite films exhibited a bandgap of 1.88 eV and demonstrated good photostability without any signs of halide segregation under continuous illumination probed over 3 h. Additionally, thermal evaporation offers a scalable approach for large-scale production, further enhancing the potential for widespread adoption of this technology. This advancement enabled the incorporation of CsPbI₂Br perovskite films into a monolithic perovskite/perovskite/silicon triple-junction device as the top-cell absorber. Consequently, we developed the first triple-junction device with an all-inorganic perovskite top-cell absorber using the thermal evaporation technique, achieving an efficiency of 21%, with an open-circuit voltage of 2.83 V over an active area of 1 cm². The device underwent 100 h of fixed voltage measurement near maximum power point under ambient conditions without encapsulation. Remarkably, it not only withstood the measurement but also exhibited an improved efficiency of ~22% afterwards, further demonstrating the stability and reliability of our thermally evaporated CsPbI₂Br perovskite absorber-based inorganic solar cell for monolithic triple-junction perovskite/perovskite/silicon applications.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 7","pages":"782-794"},"PeriodicalIF":8.0,"publicationDate":"2025-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3923","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144273232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photovoltaics Literature Survey (No. 199)","authors":"Ziv Hameiri","doi":"10.1002/pip.3918","DOIUrl":"https://doi.org/10.1002/pip.3918","url":null,"abstract":"","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 6","pages":"726-732"},"PeriodicalIF":8.0,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Light-Soaking Effects in High-Efficiency Cu(In,Ga)Se2 and (Ag,Cu)(In,Ga)Se2 Solar Cells","authors":"Klara Kiselman,&nbsp;Jan Keller,&nbsp;Patrick Pearson,&nbsp;Kostiantyn Sopiha,&nbsp;Erik Wallin,&nbsp;Marika Edoff","doi":"10.1002/pip.3912","DOIUrl":"https://doi.org/10.1002/pip.3912","url":null,"abstract":"<p>Metastable behaviours with respect to light-soaking of Cu(In,Ga)Se₂ (CIGS) solar cells have long been known and studied, but no explanation has yet been fully agreed on. In this study, silver alloying and its impact on light-soaking effects is explored in four CIGS and six (Ag,Cu)(In,Ga)Se₂ (ACIGS) samples with high efficiency (17% to 21% before light-soaking). All were produced by co-evaporation and similar depositions protocols as the current world record device but with some variation. A variety of opto-electronic characterisation methods were used to explore the response to 24 h of light-soaking at 50°C. We found that (i) the open-circuit voltage increased for all ACIGS devices but decreased for the CIGS devices, (ii) the cells entered a state with higher doping and more tail states, and (iii) the effect was metastable and partially reverted after dark storage. While the improvement of the ACIGS cells saturates after 24 h in one-third of the irradiance at one sun, months are needed to reverse the open-circuit voltage change. Despite a higher doping after light-soaking, none of the samples' short-circuit current showed significant changes and the efficiency after light-soaking ranged from 15% to 22%. No long-range change in sodium or rubidium distributions was observed using glow-discharge optical emission spectroscopy. In general, external radiative efficiency measurements showed that the nonradiative recombination loss is reduced after light-soaking in the ACIGS devices. However, the correlation to the measured voltage was not always straight forward, presumably due to the graded bandgap of the absorber.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 7","pages":"735-746"},"PeriodicalIF":8.0,"publicationDate":"2025-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3912","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144273277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Higher-Efficiency TOPCon Solar Cells in Mass Production Enabled by Laser-Assisted Firing: Advanced Loss Analysis and Near-Term Efficiency Potential","authors":"Xutao Wang,&nbsp;Jing Yuan,&nbsp;Xinyuan Wu,&nbsp;Jianjun Nie,&nbsp;Yanyan Zhang,&nbsp;Xiaoyan Zhang,&nbsp;Weiguang Yang,&nbsp;Feng Li,&nbsp;Bram Hoex","doi":"10.1002/pip.3921","DOIUrl":"https://doi.org/10.1002/pip.3921","url":null,"abstract":"<p>The tunnel oxide passivated contact (TOPCon) solar cell is predicted to dominate the photovoltaic market from the year 2024. The TOPCon efficiency is steadily increasing both in the lab and high-volume production. A notable new manufacturing technology, laser-assisted firing, has been shown to enhance the power conversion efficiency (<i>PCE</i>) of TOPCon solar cells. This enhanced contact firing technique includes a traditional co-firing step, followed by a laser scanning process in conjunction with an applied reverse bias. In this work, we utilize the Jolywood Special Injected Metallization (JSIM), a laser-assisted firing process developed by Jolywood that is already used in high-volume production. The performance of cells from the JSIM process was evaluated by comparing them to the cells fabricated using the baseline (BL) single-step firing process. The JSIM solar cells exhibited a notably higher <i>PCE</i>, approximately 0.58%_abs greater, compared with the BL cells. Detailed characterization demonstrated that the front (~280 fA/cm²) and rear (~98 fA/cm²) contact recombination of baseline (BL) cells are higher than those of JSIM cells (~88 fA/cm² and ~21 fA/cm², respectively), which is also the main advantages of the JSIM technology. Quokka 3 simulations were utilized to quantify the impact of the various improvements on the final solar cell performance. With the utilization of JSIM technology, contact recombination is no longer the primary source of power loss across the cell. Finally, the simulated results illustrated that the <i>PCE</i> of industrial JSIM cells could further be enhanced by ~0.3%_abs through optimizing the front screen pattern. This work clearly demonstrates the feasibility of laser-assisted firing in high-volume production, enabling significantly higher efficiency TOPCon solar cells by significantly reducing silicon-metal recombination. Consequently, laser-assisted firing increases the practical efficiency limit of TOPCon solar cells, bringing them close to levels that were previously only envisioned for heterojunction silicon solar cells.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 7","pages":"771-781"},"PeriodicalIF":8.0,"publicationDate":"2025-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3921","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144273221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Robustness Against Thermal Stress for Building-Integrated PV Modules Built on Aluminum Façade Elements","authors":"Wiebke Wirtz,&nbsp;Kevin Meyer,&nbsp;Rolf Brendel,&nbsp;Henning Schulte-Huxel","doi":"10.1002/pip.3915","DOIUrl":"https://doi.org/10.1002/pip.3915","url":null,"abstract":"<div>\u0000 \u0000 <p>The combination of materials from the photovoltaics (PV) industry and the building industry is often a challenge for building-integrated PV (BIPV). In this work, we combine typical materials for PV module manufacturing with aluminum, a common façade material. We build BIPV modules with crystalline silicon solar cells by directly laminating the solar cell strings on aluminum façade elements. Silicon and aluminum differ twice as much in thermal expansion coefficients than silicon and glass do. This induces high mechanical stress in the BIPV modules when the temperature varies during processing or operation. As a consequence, copper wires interconnecting the silicon solar cells might be ripped off the solar cells or even break. This work analyzes the degradation behavior of such BIPV modules with aluminum sheets on the rear side under variations in temperature. Horizontal crimps in the interconnectors in between the solar cells reduce thermal stresses and prevent the interconnectors from ripping off. Therefore, the horizontal crimps improve the reliability of BIPV modules built on aluminum façade elements. The relative remaining module power after 200 thermal cycles between −40°C and +85°C increases from 92.2% without horizontal crimps to 97.8% with strain relief by horizontal crimps for BIPV modules made of 10 half-cut silicon solar cells that are directly laminated on aluminum sheets.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 6","pages":"717-725"},"PeriodicalIF":8.0,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143919939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Subcell-Resolved EQE Method Using Reverse Voltage Biasing for Multijunction Photovoltaics With Overlapping Subcell Absorptance","authors":"Meghan N. Beattie,&nbsp;Michael Schachtner,&nbsp;Gerald Siefer,&nbsp;David Lackner,&nbsp;Oliver Höhn,&nbsp;Karin Hinzer,&nbsp;Henning Helmers","doi":"10.1002/pip.3914","DOIUrl":"https://doi.org/10.1002/pip.3914","url":null,"abstract":"<p>External quantum efficiency (EQE) measurements of individual subcells in multijunction photovoltaic devices are essential to evaluate current matching and to iterate the design process. The standard light biasing technique used to measure subcell EQE falls short when multiple subcells absorb within the same spectral region. In this work, we demonstrate a three-step reverse voltage biasing EQE method, which measures any number of subcells with overlapping absorptance: (1) A light bias is applied to generate current mismatch between the subcells. (2) Current–voltage (<i>I–V</i>) characteristics are measured into reverse bias, where the limiting subcell enters reverse-bias breakdown and the device current climbs to a plateau at the photocurrent of the next limiting subcell, producing a staircase <i>I–V</i> curve. (3) Each subcell EQE curve is measured using a voltage bias within its current plateau. We demonstrate this approach for a two-junction GaAs-based photonic power converter, comparing to the standard light biasing method and revealing better than 0.8% absolute agreement when the top junction is preferentially biased in the reverse voltage biasing method. We demonstrate the viability of the method by measuring the EQE of all subcells in a six-junction GaAs-based photonic power converter.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 7","pages":"747-756"},"PeriodicalIF":8.0,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3914","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144273161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Top-Cell Ohmic Shunt Imaging in 2-Terminal Tandem Solar Cells by Differential Electroluminescence","authors":"Joël Wyttenbach,&nbsp;Muriel Matheron","doi":"10.1002/pip.3916","DOIUrl":"https://doi.org/10.1002/pip.3916","url":null,"abstract":"<div>\u0000 \u0000 <p>Perovskite/silicon tandem photovoltaic cells promise higher energy conversion efficiencies than silicon single junctions for reasonable additional production cost. However, they are more complex, due to the increased number of layers and to the perovskite material features regarding kinetic, stability, and surface homogeneity. Although measuring each subcell independently from each other is still a challenge, this work introduces a novel quantified electroluminescence (EL) imaging method of the top-cell ohmic shunt, a major issue in perovskite stacks. Device modeling, validated by experiments, led to ohmic shunt 2D resolution from differential EL measurements around 0.7 V, without optical filtering or spectral resolution. The shunt resistance maps of more than 60 cells were characterized, and the shunt quantification from these maps was consistent with electrical measurements. These maps provide relevant clues regarding ohmic defect origin by showing their strength, shape, and location. Applications range from lab-scale performance improvement and aging monitoring to manufacturing control including encapsulation.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 7","pages":"757-770"},"PeriodicalIF":8.0,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144273155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}