Progress in Photovoltaics最新文献

{"title":"Design and Demonstration of InGaAs/GaAs/GaAsP Stepped Quantum Well Solar Cell","authors":"Yu Wen,&nbsp;Liangsheng Xie,&nbsp;Jun Xiong,&nbsp;Jiale Zheng,&nbsp;Qin Zhang,&nbsp;Junfeng Yang,&nbsp;Yoshiaki Nakano","doi":"10.1002/pip.70118","DOIUrl":"https://doi.org/10.1002/pip.70118","url":null,"abstract":"<div>\u0000 \u0000 <p>In the present work, a series of multiple-stepped quantum well (MSQW) solar cells were demonstrated, with GaAs step layers inserted between strain-balanced InGaAs wells and GaAsP barriers. We have studied carrier recombination dynamics and carrier escape kinetics from the wells, comparing the MSQW with the normal multiple quantum well (MQW). Carrier recombination rate was examined by time-resolved photoluminescence (PL), and a longer carrier lifetime was observed for the MSQW. Carrier escape from the wells was also investigated in terms of temperature-dependent PL, and smaller thermal activation energy was also observed for the MSQW. Carrier radiative recombination loss was investigated by bias-dependent PL, and it was found to be smaller for the MSQW than for the normal MQW. Such advantages of the MSQW allowed us to stack a sufficient number of quantum wells to increase short-circuit current without degrading fill factor. The simulation has also been performed in triple-junction GaInP/GaAs/Ge solar cell devices with InGaAs/GaAs/GaAsP stepped quantum wells. When standard GaInP/GaAs/Ge solar cells had optimal active layer thickness, the conversion efficiency increased from 24.2% to 33.4%. The positive effects of embedded quantum wells are proven to help improve triple-junction GaInP/GaAs/Ge solar cell performance.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1213-1224"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148871874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Cu(In,Ga)S2 Thin Films–Based Solar Cells Deposited on In2O3: Sn Transparent Back Contacts for Rear-Side Illumination Applications","authors":"Pineau Fabien,&nbsp;Bidaud Thomas,&nbsp;Arzel Ludovic,&nbsp;Choubrac Léo,&nbsp;Lepetit Thomas,&nbsp;Barreau Nicolas","doi":"10.1002/pip.70125","DOIUrl":"https://doi.org/10.1002/pip.70125","url":null,"abstract":"<div>\u0000 \u0000 <p>This study investigates the optoelectronic characteristics of solar cells based on wide bandgap Cu(In,Ga)S₂ (CIGS) absorbers, co-evaporated onto glass substrates covered with 100 nm-thick indium tin oxide (ITO) back contact. Devices based on absorbers with different thicknesses (ranging from 320 to 1580 nm) were investigated. Structural characterizations confirmed that all of the films were made of large grains, crystallized in the chalcopyrite structure with no secondary phases. It has been observed that the performance of the cells with front-side illumination improves with increasing CIGS thickness, mainly because of increased short-circuit current (<i>J</i>_SC). In contrast, the opposite trend is observed for rear-side illumination, further suggesting a hindered collection of carriers generated close to the ITO/CIGS interface. The modelling of quantum efficiency using e-ARC tool and Gartner theory suggests that all absorbers, independently of their thickness, are nearly fully depleted. In addition, they all exhibit a region with a low collection of photogenerated carriers at the vicinity of the ITO/CIGS interface. It is proposed that this area results from the consumption of gallium during gallium oxide formation at the ITO/CIGS interface.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1225-1237"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148872167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing Na and Rb Incorporation Along With Bandgap Grading for High Efficiency Ultra-Thin CIGSe Solar Cells","authors":"Christoph Rath,&nbsp;Tristan Köhler,&nbsp;Martina Schmid","doi":"10.1002/pip.70126","DOIUrl":"https://doi.org/10.1002/pip.70126","url":null,"abstract":"<p>This work investigates the role of Na and Rb incorporation in ultra-thin Cu(In,Ga)Se₂ (CIGSe) solar cells, focusing on performance optimization. By systematically varying the Rb content and combining predeposited Na with postdeposited Rb, we identify the optimal configuration, achieving efficiencies of 11.72% on Mo and 10.48% on ITO. Comprehensive structural and electrical characterization reveals that Rb not only enhances the absorber quality through superior grain boundary passivation, following a Na–Rb exchange mechanism, but also modifies the CIGSe/CdS interface by influencing the absorber surface and Cd incorporation. While combined Na and Rb postdeposition treatments suppress Cd incorporation, predeposited Na can promote it. In both cases, the added Na and Rb support the creation of an ordered vacancy compound (OVC) layer, which improves the band alignment. Temperature-dependent IV (IVT) measurements distinguish between interface and bulk recombination, revealing a Schottky barrier originating from possible GaO_x formation at the ITO/CIGSe interface, as well as a current-blocking behavior at the CIGSe/CdS interface at low temperatures related to Rb. Tuning the Ga distribution further enhances device performance: An In-Ga-In sequence in the first stage of absorber growth suppresses Rb/CdS-related barriers and further promotes alkali metal incorporation, supporting OVC layer growth and thereby possibly improving band alignment. A mechanistic model showcasing this interplay between Na, Rb, OVC, and Cd is made for visualizing the structural formation during absorber growth. These results underline the relevance of the first systematic Rb analysis in ultra-thin CIGSe solar cells and highlight the synergistic potential of combining alkali metal doping with Ga grading to improve ultra-thin CIGSe solar cells.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 10","pages":"1238-1255"},"PeriodicalIF":10.2,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70126","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148872124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Lifetime Prediction of Antisoiling Coatings Undergoing Degradation due to Rain","authors":"Sonali Bhaduri,&nbsp;Sudhanshu Mallick,&nbsp;Anil Kottantharayil,&nbsp;Narendra Shiradkar","doi":"10.1002/pip.70115","DOIUrl":"https://doi.org/10.1002/pip.70115","url":null,"abstract":"<div>\u0000 \u0000 <p>If not cleaned, energy loss due to soiling can go up to 50% in 4 months in parts of India. Such losses significantly impact the economic viability of PV deployments in sunbelt countries like the Middle East and India. Antisoiling coating offers a cost-effective dust mitigation strategy. However, as the coating is applied on the outer surface of the PV module, it has to endure various environmental stressors. Our previous studies have shown that rain is one of the most significant stressors that degrade the antisoiling coatings. This study estimates the lifetime of antisoiling coatings when subjected to rain, considering the pH of the rainwater as the stressor. The study was done on four commercial hydrophobic antisoiling coatings (A–D). Coated samples were exposed to water immersion tests; thus, the effect of the impact of the raindrop is not considered in this study. Characteristic times to failure were estimated using the Weibull distribution. The activation energy and pH dependence factor (N) were calculated using the Arrhenius-modified Pecks model. The activation energy of Coatings A–D were calculated to be 0.09, 0.43, 0.09, and 0.56 eV, respectively. Positive activation energy indicated that the coating life decreases with increased temperature. The pH dependence factor (N) for Coatings A–D was estimated as 3.6, 1.4, 0.28, and 1.31, respectively. Based on the modelled equation, we predict the life of the coatings based on Miner's rule at two different locations. All coatings showed lower coating life irrespective of the pH when exposed at a tilt angle lower than their respective roll-off angle. PV plant developers can use these data to predict coating life against this stressor at different locations, which can help identify coatings that work for specific weather conditions. It may also act as the starting point to model the effect of the combination of stressors.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1135-1145"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Shingle Interconnection Reliability of PERC and Thin HJT Cells for Low Earth Orbit Applications","authors":"Jean-Baptiste Charpentier,&nbsp;Clément Jamin,&nbsp;David Veyrié,&nbsp;Matthieu Fongral,&nbsp;Vincent Barth,&nbsp;Philippe Voarino","doi":"10.1002/pip.70120","DOIUrl":"https://doi.org/10.1002/pip.70120","url":null,"abstract":"&lt;p&gt;The unprecedented growth of satellite constellations in Low Earth Orbit (LEO) triggers a need for cost efficient solar generators able to meet a larger demand. High interconnection reliability is one of the requirements for LEO application where systems are exposed to up to \u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mn&gt;5&lt;/mn&gt;\u0000 &lt;mo&gt;×&lt;/mo&gt;\u0000 &lt;mn&gt;1&lt;/mn&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;0&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msup&gt;&lt;/math&gt; large amplitude thermal cycles per year. Standard terrestrial cell to wire/ribbon interconnections are not reliable enough. In the present work, we report the electrical performance of strings of 90-\u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mi&gt;μ&lt;/mi&gt;&lt;/math&gt;m-thick heterojunction (HJT) and 160-\u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mi&gt;μ&lt;/mi&gt;&lt;/math&gt;m-thick passivated emitter and rear cell (PERC) cells exposed to \u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mn&gt;5&lt;/mn&gt;\u0000 &lt;mo&gt;×&lt;/mo&gt;\u0000 &lt;mn&gt;1&lt;/mn&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;0&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msup&gt;&lt;/math&gt; thermal cycles with an amplitude of \u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mo&gt;−&lt;/mo&gt;&lt;/math&gt;120°C/\u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mo&gt;+&lt;/mo&gt;&lt;/math&gt;120°C based on IV curve measures at room and higher temperature along with electroluminescence and lock in thermography imaging. Shingle strings were fabricated with two different electrically conductive adhesives (ECA) for their tile-to-tile interconnection (TTI) and another for the interconnection-piece-to-tile interconnection (IPTI) prior to their encapsulation. All string materials and processes are based on the terrestrial photovoltaic (PV) industry. The results highlight the existence of interconnection instabilities, which can cause power losses underestimations. Nevertheless, all strings withstand \u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mn&gt;1&lt;/mn&gt;\u0000 &lt;mo&gt;×&lt;/mo&gt;\u0000 &lt;mn&gt;1&lt;/mn&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;0&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msup&gt;&lt;/math&gt; thermal cycles and some \u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mn&gt;5&lt;/mn&gt;\u0000 &lt;mo&gt;×&lt;/mo&gt;\u0000 &lt;mn&gt;1&lt;/mn&gt;\u0000 &lt;msup&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;0&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;mrow&gt;\u0000 &lt;mn&gt;3&lt;/mn&gt;\u0000 &lt;/mrow&gt;\u0000 &lt;/msup&gt;&lt;/math&gt; thermal cycles with a maximum power loss of \u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 &lt;mn&gt;5&lt;/mn&gt;\u0000 &lt;mo&gt;.&lt;/mo&gt;\u0000 &lt;mn&gt;5&lt;/mn&gt;\u0000 &lt;mo&gt;%&lt;/mo&gt;&lt;/math&gt;. The best strings present no sign of TTI degradation after \u0000&lt;span&gt;&lt;/span&gt;&lt;math&gt;\u0000 ","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1159-1172"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70120","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electron Irradiation-Induced Degradation of SHJ Solar Cells With Low-Cost Mass Production Towards the Low Earth Orbit Constellations Application","authors":"Yue Yuan,&nbsp;Qiang Shi,&nbsp;Tao Yu,&nbsp;Yunren Luo,&nbsp;Junlin Du,&nbsp;Wenjie Zhao,&nbsp;Jianhua Shi,&nbsp;Anjun Han,&nbsp;Liping Zhang,&nbsp;Li Zheng,&nbsp;Ma Li Ya. Hei Ni,&nbsp;Zengfeng Di,&nbsp;Wenzhu Liu,&nbsp;Xing Wei,&nbsp;Zhengxin Liu,&nbsp;Fanying Meng","doi":"10.1002/pip.70110","DOIUrl":"https://doi.org/10.1002/pip.70110","url":null,"abstract":"<div>\u0000 \u0000 <p>Silicon solar cells are currently expected to resume into the space market especially for the low earth orbit constellations in the dawning commercial spaceflight industry throughout the world. In this paper, the commercial p-type wafers are used, and the front emitter silicon heterojunction (SHJ) solar cells with 100 μm thickness are prepared. These cells are treated with 1 MeV electron irradiation of various fluence. The degradation performances of SHJ cells are analyzed, it is found that the degradation rates of the SHJ cell efficiency are around 22.5% and 26.6% at 5.0 × 10¹³ and 1.0 × 10¹⁴ e/cm², respectively, which is mainly attributed to the open-circuit voltage degradation. Furthermore, the deep level transient spectroscopy (DLTS) measurements indicated that the high concentration defects at the deep levels of E_V + 0.36 eV and E_V + 0.18 eV within energy band of the crystalline silicon act as the traps and recombination centers to deteriorate the carrier diffusion length and the open-circuit voltage of the irradiated SHJ solar cells. Fortunately, 96 h-light soaking under AM0 at room temperature and further 20-min annealing treatment at 150°C in open circuit condition under nitrogen allows SHJ solar cells to create a recovery, and the degradation rates come down to around 18.6% and 23.2% with the electron irradiation fluences of 5.0 × 10¹³ and 1.0 × 10¹⁴ e/cm² at 1 MeV, respectively. In fact, this post-treatment process is similar to the on-orbit operating state of a satellite, the solar cells temperature would sharply increase when solar panels face the sun. This self-healing can partially mitigate the radiation-induced degradation of SHJ solar cell.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1067-1076"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enabling EVA for TOPCon: How Glass Frit Composition Governs Resistance to Acetic Acid–Induced Corrosion","authors":"Jiexi Fu,&nbsp;Wei Wu,&nbsp;Yan Zhang,&nbsp;Lin Lv,&nbsp;Chao An,&nbsp;Weiguang Yang,&nbsp;Zhan Wang,&nbsp;Jinshuai Song,&nbsp;Xutao Wang,&nbsp;Xinyuan Wu,&nbsp;Bram Hoex","doi":"10.1002/pip.70116","DOIUrl":"https://doi.org/10.1002/pip.70116","url":null,"abstract":"<p>Laser-assisted firing (LAF) technologies, such as laser-enhanced contact optimization (LECO), have enabled the reliable application of low-Al Ag pastes for front-side metallization in tunnel oxide passivated contact (TOPCon) solar cells, opening a pathway to improved damp-heat (DH) stability and glass–backsheet (G-B) module designs. To further lower production costs, ethylene–vinyl acetate (EVA) and EVA/polyolefin/EVA (EPE) encapsulants are commonly employed; however, their long-term hydrolytic degradation produces acetic acid, which promotes metallization corrosion. In this work, we systematically investigate the impact of glass frit chemistry in two commercial low-Al content Ag front pastes on the cell- and module-level stability of LAF-processed TOPCon devices. Accelerated acetic-acid exposure tests reveal that a Ba- and Zn-modified glass frit (Paste B) exhibits markedly improved resistance to interfacial degradation compared with a Pb- and B-rich frit (Paste A), as evidenced by a maintained series resistance, contact resistivity and Ag–Si interfacial integrity. Microscopic and elemental analyses revealed that Ba enrichment in the glass frit markedly improves interfacial stability relative to Pb- and B-rich formulations. At the module level, DH85 (85°C/85% RH) testing of G–B TOPCon modules (front EPE/rear EVA) demonstrates that Paste B limits the relative power loss to 4%–5% after 1500 h, whereas Paste A leads to severe fill-factor-driven degradation resulting in a power loss over 25%. These results establish a direct correlation between glass frit composition, acetic-acid corrosion resistance and DH stability, highlighting glass network engineering as a key lever for designing robust, low-cost metallization systems for next-generation TOPCon modules.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1125-1134"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70116","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-Thin Bipoly Solar Cells With Front Selective \u0000\u0000 n-Type TOPCon and Rear Blanket \u0000\u0000 p-Type TOPCon Layers","authors":"Yuchi Lan,&nbsp;John Derek Arcebal,&nbsp;Gabby De Luna,&nbsp;Pradeep Padhamnath,&nbsp;Armin Gerhard Aberle,&nbsp;Aaron Danner","doi":"10.1002/pip.70114","DOIUrl":"https://doi.org/10.1002/pip.70114","url":null,"abstract":"<p>This study investigates ultra-thin silicon solar cells with polysilicon (poly-Si) passivated contacts on both sides (biPoly cells). Low-pressure chemical vapor deposition (LPCVD) was used for the deposition of front and rear poly-Si layers along with a complete passivation structure. Patterning of the top \u0000<span></span><math>\u0000 <msup>\u0000 <mrow>\u0000 <mi>n</mi>\u0000 </mrow>\u0000 <mrow>\u0000 <mo>+</mo>\u0000 </mrow>\u0000 </msup></math> poly-Si layer was used to restrict it to the metal-finger regions, thereby improving carrier lifetime and useful light absorption. A saw damage etching (SDE) process with varied time was used for thinning down the silicon (Si) substrates. The thinnest bendable cell achieved is 80 \u0000<span></span><math>\u0000 <mi>μ</mi></math>m thick, with an efficiency of 19.7%. Because cell mass per area approximately scales with silicon thickness, the efficiency-to-thickness ratio is a practical proxy for specific power in lightweight/flexible use-cases. Our devices reach 0.25% per \u0000<span></span><math>\u0000 <mi>μ</mi></math>m, to our knowledge among the highest reported for TOPCon cells at comparable thickness. The results highlight the potential of selective biPoly passivated ultra-thin silicon solar cells for high-performance photovoltaic applications.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1113-1124"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70114","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advancing Circular Strategies in Photovoltaics: Assessing Reuse Readiness Across Technical, Economic, and Environmental Dimensions in a Case Study","authors":"Roger Nyffenegger,&nbsp;Mija Frossard,&nbsp;Alexandre Voirol,&nbsp;Michael Gasser,&nbsp;Julien Winkelmann,&nbsp;Stefan Grösser,&nbsp;Nancy Bocken","doi":"10.1002/pip.70108","DOIUrl":"https://doi.org/10.1002/pip.70108","url":null,"abstract":"<p>The rapid expansion of photovoltaic installations, now reaching record capacities, is exacerbating end-of-life challenges in this predominantly linear industry. In response, two circular strategies have emerged in the downstream photovoltaic value chain: preparation for reuse and recycling. Contrary to the European waste hierarchy, recycling is widely prioritized as the primary end-of-life solution, whereas preparation for reuse remains limited in scale. Nevertheless, as end-of-life volumes rise, the potential for reuse increases, with a substantial proportion of decommissioned modules considered suitable for reuse. However, the reuse sector's growth is constrained by inconsistent practices, the absence of harmonized technical standards, restricted information exchange, and immature business models. This study addresses these gaps through an exploratory case study of the Swiss PV Circle project, assessing reuse readiness from technical, economic, and environmental perspectives. The results confirm technical feasibility, with cost efficiencies achievable via targeted preselection informed by maintenance records. Economic viability is contingent on module age, testing requirements, and prevailing market conditions, with labor and transport identified as the dominant variable cost drivers. Environmental desirability is demonstrated by the finding that reusing early-decommissioned, low-degradation modules substantially lowers greenhouse gas emissions, whereas the preparation process itself has a negligible impact. This multidimensional evaluation advances the understanding of reuse readiness and provides a foundation for further interdisciplinary research into practical reuse applications, ecosystem interdependencies, and enabling policy frameworks.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1077-1099"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70108","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical Durability of Contemporary PV Encapsulants Through Artificial UV Weathering","authors":"Dennice M. Roberts,&nbsp;Xavier Hanna,&nbsp;David C. Miller,&nbsp;Rachael L. Arnold,&nbsp;Jimmy M. Newkirk,&nbsp;Kent Terwilliger,&nbsp;Steve Johnston,&nbsp;Rebecca B. Wai,&nbsp;Peter Hacke,&nbsp;Dana B. Kern","doi":"10.1002/pip.70119","DOIUrl":"https://doi.org/10.1002/pip.70119","url":null,"abstract":"<p>Modern c-Si photovoltaic (PV) cells provide high performance but can be vulnerable to ultraviolet light induced degradation (UV-ID). Encapsulants, if chosen correctly, can mitigate UV-ID of the PV cell. Here, we explore performance and durability of 14 commercial encapsulant materials before, during, and after irradiation with UV-containing light. Materials include contemporary, polymer-based encapsulants with a base polymer of poly (ethylene co-vinyl acetate) (EVA), polyethylene-α-olefin (POE), or their composite (EPE). Polymers contain additives that induce UV-blocking, UV-transmitting, or UV-downshifting properties. We use test coupons to study degradation in a chamber held at 65°C under a xenon light source for up to 4000 h of exposure, corresponding to a cumulative dose of 11.5 MJ/m² at 340 nm. We examine optical properties including spectral transmittance, yellowness index and spectral fluorescence, considering changes to both the encapsulant and glass as a function of weathering time. Degradation modes identified include discoloration, changes to UV cutoff wavelength, changes to solar-weighted transmittance, and most notably a change to the UV-managing properties of some additives. We propose the use of solar-weighted transmittance in the 300- to 400-nm range to better track performance changes in the UV region associated with the UV-related additive. This is especially relevant for the emerging class of UV-downshifting additives, as metrics like UV-cutoff can understate the degree of degradation or change in these materials. While most encapsulants show very little change after weathering, some show significant changes that directly impact how much UV light would reach an underlying cell.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1189-1199"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70119","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}