Jean-Baptiste Charpentier, Clément Jamin, David Veyrié, Matthieu Fongral, Vincent Barth, Philippe Voarino
{"title":"Shingle Interconnection Reliability of PERC and Thin HJT Cells for Low Earth Orbit Applications","authors":"Jean-Baptiste Charpentier, Clément Jamin, David Veyrié, Matthieu Fongral, Vincent Barth, Philippe Voarino","doi":"10.1002/pip.70120","DOIUrl":"https://doi.org/10.1002/pip.70120","url":null,"abstract":"<p>The unprecedented growth of satellite constellations in Low Earth Orbit (LEO) triggers a need for cost efficient solar generators able to meet a larger demand. High interconnection reliability is one of the requirements for LEO application where systems are exposed to up to \u0000<span></span><math>\u0000 <mn>5</mn>\u0000 <mo>×</mo>\u0000 <mn>1</mn>\u0000 <msup>\u0000 <mrow>\u0000 <mn>0</mn>\u0000 </mrow>\u0000 <mrow>\u0000 <mn>3</mn>\u0000 </mrow>\u0000 </msup></math> large amplitude thermal cycles per year. Standard terrestrial cell to wire/ribbon interconnections are not reliable enough. In the present work, we report the electrical performance of strings of 90-\u0000<span></span><math>\u0000 <mi>μ</mi></math>m-thick heterojunction (HJT) and 160-\u0000<span></span><math>\u0000 <mi>μ</mi></math>m-thick passivated emitter and rear cell (PERC) cells exposed to \u0000<span></span><math>\u0000 <mn>5</mn>\u0000 <mo>×</mo>\u0000 <mn>1</mn>\u0000 <msup>\u0000 <mrow>\u0000 <mn>0</mn>\u0000 </mrow>\u0000 <mrow>\u0000 <mn>3</mn>\u0000 </mrow>\u0000 </msup></math> thermal cycles with an amplitude of \u0000<span></span><math>\u0000 <mo>−</mo></math>120°C/\u0000<span></span><math>\u0000 <mo>+</mo></math>120°C based on IV curve measures at room and higher temperature along with electroluminescence and lock in thermography imaging. Shingle strings were fabricated with two different electrically conductive adhesives (ECA) for their tile-to-tile interconnection (TTI) and another for the interconnection-piece-to-tile interconnection (IPTI) prior to their encapsulation. All string materials and processes are based on the terrestrial photovoltaic (PV) industry. The results highlight the existence of interconnection instabilities, which can cause power losses underestimations. Nevertheless, all strings withstand \u0000<span></span><math>\u0000 <mn>1</mn>\u0000 <mo>×</mo>\u0000 <mn>1</mn>\u0000 <msup>\u0000 <mrow>\u0000 <mn>0</mn>\u0000 </mrow>\u0000 <mrow>\u0000 <mn>3</mn>\u0000 </mrow>\u0000 </msup></math> thermal cycles and some \u0000<span></span><math>\u0000 <mn>5</mn>\u0000 <mo>×</mo>\u0000 <mn>1</mn>\u0000 <msup>\u0000 <mrow>\u0000 <mn>0</mn>\u0000 </mrow>\u0000 <mrow>\u0000 <mn>3</mn>\u0000 </mrow>\u0000 </msup></math> thermal cycles with a maximum power loss of \u0000<span></span><math>\u0000 <mn>5</mn>\u0000 <mo>.</mo>\u0000 <mn>5</mn>\u0000 <mo>%</mo></math>. The best strings present no sign of TTI degradation after \u0000<span></span><math>\u0000 ","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1159-1172"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70120","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dennice M. Roberts, Xavier Hanna, David C. Miller, Rachael L. Arnold, Jimmy M. Newkirk, Kent Terwilliger, Steve Johnston, Rebecca B. Wai, Peter Hacke, Dana B. Kern
{"title":"Optical Durability of Contemporary PV Encapsulants Through Artificial UV Weathering","authors":"Dennice M. Roberts, Xavier Hanna, David C. Miller, Rachael L. Arnold, Jimmy M. Newkirk, Kent Terwilliger, Steve Johnston, Rebecca B. Wai, Peter Hacke, Dana B. Kern","doi":"10.1002/pip.70119","DOIUrl":"https://doi.org/10.1002/pip.70119","url":null,"abstract":"<p>Modern c-Si photovoltaic (PV) cells provide high performance but can be vulnerable to ultraviolet light induced degradation (UV-ID). Encapsulants, if chosen correctly, can mitigate UV-ID of the PV cell. Here, we explore performance and durability of 14 commercial encapsulant materials before, during, and after irradiation with UV-containing light. Materials include contemporary, polymer-based encapsulants with a base polymer of poly (ethylene co-vinyl acetate) (EVA), polyethylene-α-olefin (POE), or their composite (EPE). Polymers contain additives that induce UV-blocking, UV-transmitting, or UV-downshifting properties. We use test coupons to study degradation in a chamber held at 65°C under a xenon light source for up to 4000 h of exposure, corresponding to a cumulative dose of 11.5 MJ/m<sup>2</sup> at 340 nm. We examine optical properties including spectral transmittance, yellowness index and spectral fluorescence, considering changes to both the encapsulant and glass as a function of weathering time. Degradation modes identified include discoloration, changes to UV cutoff wavelength, changes to solar-weighted transmittance, and most notably a change to the UV-managing properties of some additives. We propose the use of solar-weighted transmittance in the 300- to 400-nm range to better track performance changes in the UV region associated with the UV-related additive. This is especially relevant for the emerging class of UV-downshifting additives, as metrics like UV-cutoff can understate the degree of degradation or change in these materials. While most encapsulants show very little change after weathering, some show significant changes that directly impact how much UV light would reach an underlying cell.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1189-1199"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70119","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrochemical Modeling of PID Leakage Current of PV Modules: Steady-State Current, Transient Current, and RC-Equivalent Circuit","authors":"GovindaSamy TamizhMani, Fang Li, Cécile Molto, Hubert Seigneur, Peter Hacke, Jaewon Oh","doi":"10.1002/pip.70113","DOIUrl":"https://doi.org/10.1002/pip.70113","url":null,"abstract":"<div>\u0000 \u0000 <p>Potential-induced degradation (PID) remains a significant reliability concern for photovoltaic (PV) modules, arising when a voltage difference between the module frame and the solar cells drives unintended leakage current through the glass–encapsulant stack. Although PID ultimately manifests as PID-s, PID-p, or PID-c, the underlying behavior of the leakage current—its magnitude and time dependence—requires clearer electrochemical interpretation. Traditional explanations attribute the initial transient current to bulk capacitive elements of the glass, encapsulant, and antireflection coatings, and the steady-state current according to their effective ohmic resistance. More recent studies, however, indicate that electrochemical charge-transfer processes at the encapsulant–metallization interface can play a dominant role in defining the leakage-current path. This paper develops a unified electrochemical framework for modeling PID leakage current. First, an RC-equivalent circuit is formulated by combining conventional RC elements with a Randles-type interface to capture transient leakage current through double-layer capacitance and faradaic processes at ionic–electronic boundaries. Second, the steady-state current–voltage behavior is explained using a linearized Butler–Volmer relationship, showing that the measured ohmic response corresponds to the low-overpotential limit of charge-transfer kinetics. Analytical results demonstrate that, for typical module materials—3.2-mm soda-lime glass and 0.45-mm encapsulant—the dominant modulators to PID leakage current are the glass surface resistance (under dry-surface conditions), the glass bulk capacitance, and the encapsulant resistance (under wet-surface conditions), with soda lime glass surface and EVA/POE encapsulant resistances primarily governing steady-state current. The proposed electrochemical model is validated against measured leakage-current data, showing good agreement in both the magnitude and the time-dependent evolution of PID leakage current.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1100-1112"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. D. Subash, Devi Arumugam, S. Vijayalakshmi, T. D. Subha, Yun Gao
{"title":"Optimized Three-Layer Carbon Electrode Architecture for High-Performance CsPbI3 Perovskite Solar Cells","authors":"T. D. Subash, Devi Arumugam, S. Vijayalakshmi, T. D. Subha, Yun Gao","doi":"10.1002/pip.70117","DOIUrl":"https://doi.org/10.1002/pip.70117","url":null,"abstract":"<div>\u0000 \u0000 <p>Perovskite solar cells (PSCs), particularly cesium lead iodide (CsPbI<sub>3</sub>)–based ones, offer low fabrication costs, high efficiency, and potential for scalable production. However, a significant drawback is their instability, especially under moisture and high-temperature conditions, which can lead to degradation and reduced long-term performance. To overcome these issues, this paper presents a novel approach for optimized three-layer carbon electrode (CE) architecture for high-performance CsPbI<sub>3</sub> PSCs. The proposed method integrates the capabilities of leaf in wind optimization (LWO) algorithm and progressive graph convolutional networks (PGCNs), forming a model termed LWO–PGCN. The main goals of the proposed technique are to develop the power conversion efficiency (PCE) and stability of PSCs. The LWO algorithm performs global optimization of structural parameters, while the PGCN model predicts photovoltaic performance by capturing complex relationships between device parameters, enabling efficient identification of high-performance device configurations. The LWO algorithm is employed to optimize perovskite layer thickness, hole transport material (HTM) layer thickness. The PGCN is used to predict the PCE with high accuracy. The proposed method demonstrates better performance than existing techniques, including deep neural network (DNN), probabilistic neural networks (PNN), and artificial neural network (ANN), as evaluated and compared using the MATLAB platform. The proposed method achieves a higher PCE of 29.9%, short-circuit current density (<i>J</i><sub><i>sc</i></sub>) of 25.84 mA/cm<sup>2</sup>, open-circuit voltage (<i>V</i><sub><i>oc</i></sub>) of 1.32 V, and fill factor (FF) of 74.89%, indicating superior photovoltaic performance compared with existing methods. The proposed LWO-PGCN model significantly enhances the stability and efficiency of CsPbI<sub>3</sub>-based PSCs, outperforming existing methods in photovoltaic performance.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1173-1188"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yue Yuan, Qiang Shi, Tao Yu, Yunren Luo, Junlin Du, Wenjie Zhao, Jianhua Shi, Anjun Han, Liping Zhang, Li Zheng, Ma Li Ya. Hei Ni, Zengfeng Di, Wenzhu Liu, Xing Wei, Zhengxin Liu, Fanying Meng
{"title":"Electron Irradiation-Induced Degradation of SHJ Solar Cells With Low-Cost Mass Production Towards the Low Earth Orbit Constellations Application","authors":"Yue Yuan, Qiang Shi, Tao Yu, Yunren Luo, Junlin Du, Wenjie Zhao, Jianhua Shi, Anjun Han, Liping Zhang, Li Zheng, Ma Li Ya. Hei Ni, Zengfeng Di, Wenzhu Liu, Xing Wei, Zhengxin Liu, Fanying Meng","doi":"10.1002/pip.70110","DOIUrl":"https://doi.org/10.1002/pip.70110","url":null,"abstract":"<div>\u0000 \u0000 <p>Silicon solar cells are currently expected to resume into the space market especially for the low earth orbit constellations in the dawning commercial spaceflight industry throughout the world. In this paper, the commercial p-type wafers are used, and the front emitter silicon heterojunction (SHJ) solar cells with 100 μm thickness are prepared. These cells are treated with 1 MeV electron irradiation of various fluence. The degradation performances of SHJ cells are analyzed, it is found that the degradation rates of the SHJ cell efficiency are around 22.5% and 26.6% at 5.0 × 10<sup>13</sup> and 1.0 × 10<sup>14</sup> e/cm<sup>2</sup>, respectively, which is mainly attributed to the open-circuit voltage degradation. Furthermore, the deep level transient spectroscopy (DLTS) measurements indicated that the high concentration defects at the deep levels of E<sub>V</sub> + 0.36 eV and E<sub>V</sub> + 0.18 eV within energy band of the crystalline silicon act as the traps and recombination centers to deteriorate the carrier diffusion length and the open-circuit voltage of the irradiated SHJ solar cells. Fortunately, 96 h-light soaking under AM0 at room temperature and further 20-min annealing treatment at 150°C in open circuit condition under nitrogen allows SHJ solar cells to create a recovery, and the degradation rates come down to around 18.6% and 23.2% with the electron irradiation fluences of 5.0 × 10<sup>13</sup> and 1.0 × 10<sup>14</sup> e/cm<sup>2</sup> at 1 MeV, respectively. In fact, this post-treatment process is similar to the on-orbit operating state of a satellite, the solar cells temperature would sharply increase when solar panels face the sun. This self-healing can partially mitigate the radiation-induced degradation of SHJ solar cell.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1067-1076"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Lifetime Prediction of Antisoiling Coatings Undergoing Degradation due to Rain","authors":"Sonali Bhaduri, Sudhanshu Mallick, Anil Kottantharayil, Narendra Shiradkar","doi":"10.1002/pip.70115","DOIUrl":"https://doi.org/10.1002/pip.70115","url":null,"abstract":"<div>\u0000 \u0000 <p>If not cleaned, energy loss due to soiling can go up to 50% in 4 months in parts of India. Such losses significantly impact the economic viability of PV deployments in sunbelt countries like the Middle East and India. Antisoiling coating offers a cost-effective dust mitigation strategy. However, as the coating is applied on the outer surface of the PV module, it has to endure various environmental stressors. Our previous studies have shown that rain is one of the most significant stressors that degrade the antisoiling coatings. This study estimates the lifetime of antisoiling coatings when subjected to rain, considering the pH of the rainwater as the stressor. The study was done on four commercial hydrophobic antisoiling coatings (A–D). Coated samples were exposed to water immersion tests; thus, the effect of the impact of the raindrop is not considered in this study. Characteristic times to failure were estimated using the Weibull distribution. The activation energy and pH dependence factor (N) were calculated using the Arrhenius-modified Pecks model. The activation energy of Coatings A–D were calculated to be 0.09, 0.43, 0.09, and 0.56 eV, respectively. Positive activation energy indicated that the coating life decreases with increased temperature. The pH dependence factor (N) for Coatings A–D was estimated as 3.6, 1.4, 0.28, and 1.31, respectively. Based on the modelled equation, we predict the life of the coatings based on Miner's rule at two different locations. All coatings showed lower coating life irrespective of the pH when exposed at a tilt angle lower than their respective roll-off angle. PV plant developers can use these data to predict coating life against this stressor at different locations, which can help identify coatings that work for specific weather conditions. It may also act as the starting point to model the effect of the combination of stressors.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1135-1145"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jiexi Fu, Wei Wu, Yan Zhang, Lin Lv, Chao An, Weiguang Yang, Zhan Wang, Jinshuai Song, Xutao Wang, Xinyuan Wu, Bram Hoex
{"title":"Enabling EVA for TOPCon: How Glass Frit Composition Governs Resistance to Acetic Acid–Induced Corrosion","authors":"Jiexi Fu, Wei Wu, Yan Zhang, Lin Lv, Chao An, Weiguang Yang, Zhan Wang, Jinshuai Song, Xutao Wang, Xinyuan Wu, Bram Hoex","doi":"10.1002/pip.70116","DOIUrl":"https://doi.org/10.1002/pip.70116","url":null,"abstract":"<p>Laser-assisted firing (LAF) technologies, such as laser-enhanced contact optimization (LECO), have enabled the reliable application of low-Al Ag pastes for front-side metallization in tunnel oxide passivated contact (TOPCon) solar cells, opening a pathway to improved damp-heat (DH) stability and glass–backsheet (G-B) module designs. To further lower production costs, ethylene–vinyl acetate (EVA) and EVA/polyolefin/EVA (EPE) encapsulants are commonly employed; however, their long-term hydrolytic degradation produces acetic acid, which promotes metallization corrosion. In this work, we systematically investigate the impact of glass frit chemistry in two commercial low-Al content Ag front pastes on the cell- and module-level stability of LAF-processed TOPCon devices. Accelerated acetic-acid exposure tests reveal that a Ba- and Zn-modified glass frit (Paste B) exhibits markedly improved resistance to interfacial degradation compared with a Pb- and B-rich frit (Paste A), as evidenced by a maintained series resistance, contact resistivity and Ag–Si interfacial integrity. Microscopic and elemental analyses revealed that Ba enrichment in the glass frit markedly improves interfacial stability relative to Pb- and B-rich formulations. At the module level, DH85 (85°C/85% RH) testing of G–B TOPCon modules (front EPE/rear EVA) demonstrates that Paste B limits the relative power loss to 4%–5% after 1500 h, whereas Paste A leads to severe fill-factor-driven degradation resulting in a power loss over 25%. These results establish a direct correlation between glass frit composition, acetic-acid corrosion resistance and DH stability, highlighting glass network engineering as a key lever for designing robust, low-cost metallization systems for next-generation TOPCon modules.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1125-1134"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70116","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kulwinder Kaur, Arivazhagan Valluvar Oli, Michele Melchiorre, Wolfram Hempel, Wolfram Witte, Jan Keller, Susanne Siebentritt
{"title":"Near 13% Efficient Semitransparent Cu(In,Ga)S2 Solar Cells With Band Gap of 1.6 eV on Transparent Back Contact","authors":"Kulwinder Kaur, Arivazhagan Valluvar Oli, Michele Melchiorre, Wolfram Hempel, Wolfram Witte, Jan Keller, Susanne Siebentritt","doi":"10.1002/pip.70122","DOIUrl":"https://doi.org/10.1002/pip.70122","url":null,"abstract":"<p>Wide-gap Cu(In,Ga)S<sub>2</sub> solar cells with In<sub>2</sub>O<sub>3</sub>:Sn (ITO) as transparent back contact are evaluated for the application as top cells in tandem devices. The effect of Na on the solar cell performance is investigated by supplying additional Na by NaF co-evaporation or exclusively by Na diffusion from glass. An efficiency of 12.7% is achieved for a semitransparent solar cell with a band gap of 1.6 eV, with sufficient Na diffusion from glass only, allowed by a thin ITO layer. Absorber grown with additional NaF co-evaporation during Cu(In,Ga)S<sub>2</sub> growth on thicker ITO show a comparable efficiency of 12%. High-temperature growth at \u0000<span></span><math>\u0000 <msub>\u0000 <mi>T</mi>\u0000 <mi>sub</mi>\u0000 </msub></math> = 630°C enhances overall absorber quality and results in wide-gap absorbers, with photoluminescence quantum yield improved to 1.5 × 10<sup>−5</sup>, two orders of magnitude higher than absorber grown at low temperature. NaF co-evaporation is effective in suppressing deep defects, thereby reducing non-radiative recombination and enhancing photoluminescence quantum yield further. A GaO<sub>x</sub> interfacial layer is formed at the rear contact, likely contributing to the passivation of the back contact. With the presence of thick GaO<sub>x</sub> layer, current blocking effects are visible in the current–voltage curves. On the contrary, a thinner ITO tends to result in thinner GaO<sub>x</sub> layer and no current blocking is observed.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1146-1158"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70122","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Roger Nyffenegger, Mija Frossard, Alexandre Voirol, Michael Gasser, Julien Winkelmann, Stefan Grösser, Nancy Bocken
{"title":"Advancing Circular Strategies in Photovoltaics: Assessing Reuse Readiness Across Technical, Economic, and Environmental Dimensions in a Case Study","authors":"Roger Nyffenegger, Mija Frossard, Alexandre Voirol, Michael Gasser, Julien Winkelmann, Stefan Grösser, Nancy Bocken","doi":"10.1002/pip.70108","DOIUrl":"https://doi.org/10.1002/pip.70108","url":null,"abstract":"<p>The rapid expansion of photovoltaic installations, now reaching record capacities, is exacerbating end-of-life challenges in this predominantly linear industry. In response, two circular strategies have emerged in the downstream photovoltaic value chain: preparation for reuse and recycling. Contrary to the European waste hierarchy, recycling is widely prioritized as the primary end-of-life solution, whereas preparation for reuse remains limited in scale. Nevertheless, as end-of-life volumes rise, the potential for reuse increases, with a substantial proportion of decommissioned modules considered suitable for reuse. However, the reuse sector's growth is constrained by inconsistent practices, the absence of harmonized technical standards, restricted information exchange, and immature business models. This study addresses these gaps through an exploratory case study of the Swiss PV Circle project, assessing reuse readiness from technical, economic, and environmental perspectives. The results confirm technical feasibility, with cost efficiencies achievable via targeted preselection informed by maintenance records. Economic viability is contingent on module age, testing requirements, and prevailing market conditions, with labor and transport identified as the dominant variable cost drivers. Environmental desirability is demonstrated by the finding that reusing early-decommissioned, low-degradation modules substantially lowers greenhouse gas emissions, whereas the preparation process itself has a negligible impact. This multidimensional evaluation advances the understanding of reuse readiness and provides a foundation for further interdisciplinary research into practical reuse applications, ecosystem interdependencies, and enabling policy frameworks.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1077-1099"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70108","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kulwinder Kaur, Arivazhagan Valluvar Oli, Michele Melchiorre, Wolfram Hempel, Wolfram Witte, Jan Keller, Susanne Siebentritt
{"title":"Near 13% Efficient Semitransparent Cu(In,Ga)S2 Solar Cells With Band Gap of 1.6 eV on Transparent Back Contact","authors":"Kulwinder Kaur, Arivazhagan Valluvar Oli, Michele Melchiorre, Wolfram Hempel, Wolfram Witte, Jan Keller, Susanne Siebentritt","doi":"10.1002/pip.70122","DOIUrl":"https://doi.org/10.1002/pip.70122","url":null,"abstract":"<p>Wide-gap Cu(In,Ga)S<sub>2</sub> solar cells with In<sub>2</sub>O<sub>3</sub>:Sn (ITO) as transparent back contact are evaluated for the application as top cells in tandem devices. The effect of Na on the solar cell performance is investigated by supplying additional Na by NaF co-evaporation or exclusively by Na diffusion from glass. An efficiency of 12.7% is achieved for a semitransparent solar cell with a band gap of 1.6 eV, with sufficient Na diffusion from glass only, allowed by a thin ITO layer. Absorber grown with additional NaF co-evaporation during Cu(In,Ga)S<sub>2</sub> growth on thicker ITO show a comparable efficiency of 12%. High-temperature growth at \u0000<span></span><math>\u0000 <msub>\u0000 <mi>T</mi>\u0000 <mi>sub</mi>\u0000 </msub></math> = 630°C enhances overall absorber quality and results in wide-gap absorbers, with photoluminescence quantum yield improved to 1.5 × 10<sup>−5</sup>, two orders of magnitude higher than absorber grown at low temperature. NaF co-evaporation is effective in suppressing deep defects, thereby reducing non-radiative recombination and enhancing photoluminescence quantum yield further. A GaO<sub>x</sub> interfacial layer is formed at the rear contact, likely contributing to the passivation of the back contact. With the presence of thick GaO<sub>x</sub> layer, current blocking effects are visible in the current–voltage curves. On the contrary, a thinner ITO tends to result in thinner GaO<sub>x</sub> layer and no current blocking is observed.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1146-1158"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70122","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}