Progress in Photovoltaics最新文献

{"title":"Photovoltaics literature survey (No. 190)","authors":"Ziv Hameiri","doi":"10.1002/pip.3795","DOIUrl":"https://doi.org/10.1002/pip.3795","url":null,"abstract":"<p>Hu F, Mou S, Wei S, et al <b>Research on the evolution of China's photovoltaic technology innovation network from the perspective of patents.</b> <i>Energy Strategy Reviews</i> 2024; <b>51</b>: 101309.</p><p>De Keersmaecker M, Tirado J, Armstrong NR, et al <b>Defect quantification in metal halide perovskites anticipates photoluminescence and photovoltaic performance.</b> <i>Acs Energy Letters</i> 2024; <b>9</b>(1): 243–252.</p><p>Wang S, Wang C, Ge Y, et al <b>In-depth analysis of photovoltaic module parameter estimation.</b> <i>Energy</i> 2024; <b>291</b>: 130345.</p><p>Cao Y, Pang D, Zhao Q, et al <b>Improved YOLOv8-GD deep learning model for defect detection in electroluminescence images of solar photovoltaic modules.</b> <i>Engineering Applications of Artificial Intelligence</i> 2024; <b>131</b>: 107866.</p><p>Musiienko A, Yang FJ, Gries TW, et al <b>Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport.</b> <i>Nature Communications</i> 2024; <b>15</b>(1): 316.</p><p>Qin Y, Yonemoto A, Gotoh K, et al <b>Potential-induced degradation phenomena in single-encapsulation crystalline Si photovoltaic modules.</b> <i>Japanese Journal of Applied Physics</i> 2024; <b>63</b>(2): 02SP11.</p><p>Chen W, Liu W, Yu Y, et al <b>Study on selective emitter fabrication through an innovative pre-diffusion process for enhanced efficiency in TOPCon solar cells.</b> <i>Progress in Photovoltaics: Research and Applications</i> 2024; <b>32</b>(3): 199–211.</p><p>Chen S, Shi J, Yao Y, et al <b>Enhancement of short-circuit current density in silicon heterojunction solar cells by hydrogenated multiple-doped In</b><sub><b>2</b></sub><b>O</b><sub><b>3</b></sub> <b>thin films.</b> <i>Solar Energy Materials and Solar Cells</i> 2024; <b>267</b>: 112727.</p><p>Hossain MJ, Sun M, Davis KO. <b>Photon management in silicon photovoltaic cells: A critical review.</b> <i>Solar Energy Materials and Solar Cells</i> 2024; <b>267</b>: 112715.</p><p>Li Y, Shi B, Xu Q, et al <b>CsCl induced efficient fully-textured perovskite/crystalline silicon tandem solar cell.</b> <i>Nano Energy</i> 2024; <b>122</b>: 109285.</p><p>Ravidas BK, Das A, Agnihotri SK, et al <b>Design principles of crystalline silicon/CsGeI</b><sub><b>3</b></sub> <b>perovskite tandem solar cells using a combination of density functional theory and SCAPS-1D frameworks.</b> <i>Solar Energy Materials and Solar Cells</i> 2024; <b>267</b>: 112688.</p><p>Du B, Ma MY, Zhang PP, et al <b>High-performance all-small-molecule organic solar cells fabricated via halogen-free preparation process.</b> <i>Acs Applied Materials and Interfaces</i> 2024; <b>16</b>(2): 2564–2,572.</p><p>Fan B, Gao H, Jen AK. <b>Biaxially conjugated materials for organic solar cells.</b> <i>Acs Nano</i> 2024; <b>18</b>(1): 136–154.</p><p>Kim JH, Park B, Song S, et al <b>Stretchable and transparent nanopillar arrays for high-performance ultra-flexible organic photovoltaics.</b> <i>Applied Physic","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 4","pages":"276-279"},"PeriodicalIF":6.7,"publicationDate":"2024-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3795","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140104467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical limiting-efficiency assessment on advanced crystalline silicon solar cells with Auger ideality factor and wafer thickness modifications","authors":"Qiao Su,&nbsp;Hao Lin,&nbsp;Genshun Wang,&nbsp;Hanbo Tang,&nbsp;Chaowei Xue,&nbsp;Zhenguo Li,&nbsp;Xixiang Xu,&nbsp;Pingqi Gao","doi":"10.1002/pip.3790","DOIUrl":"10.1002/pip.3790","url":null,"abstract":"<p>With the improvement of surface passivation, bulk recombination is becoming an indispensable and decisive factor to assess the theoretical limiting efficiency (\u0000<span></span><math>\u0000 <msub>\u0000 <mi>η</mi>\u0000 <mi>lim</mi>\u0000 </msub></math>) of crystalline silicon (c-Si) solar cells. In simultaneous consideration of surface and bulk recombination, a modified model of \u0000<span></span><math>\u0000 <msub>\u0000 <mi>η</mi>\u0000 <mi>lim</mi>\u0000 </msub></math> evaluation is developed. Surface recombination is directly depicted with contact selectivity while bulk recombination is revised on the aspects of ideality factor and wafer thickness. The \u0000<span></span><math>\u0000 <msub>\u0000 <mi>η</mi>\u0000 <mi>lim</mi>\u0000 </msub></math> of the double-side silicon heterojunction (SHJ) and double-side tunneling-oxide passivating contact (TOPCon) solar cells are numerically simulated using the new model as 28.99% and 29.19%, respectively. However, the \u0000<span></span><math>\u0000 <msub>\u0000 <mi>η</mi>\u0000 <mi>lim</mi>\u0000 </msub></math> of single-side TOPCon solar cells, the more practicable scenario, is only 27.79%. Besides, the \u0000<span></span><math>\u0000 <msub>\u0000 <mi>η</mi>\u0000 <mi>lim</mi>\u0000 </msub></math> of the double-side SHJ solar cells would exceed the double-side TOPCon solar cells if the recombination parameter of the non-contacted area is higher than 0.6 fA/cm², instead of perfect passivation. Our results are instructive in accurately assessing efficiency potential and accordingly optimizing design strategies of c-Si solar cells.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 9","pages":"587-598"},"PeriodicalIF":8.0,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140045737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Large-area MoOx/c-Si heterojunction solar cells with a ICO/Ag back reflector","authors":"Xu Wang,&nbsp;Bowen Ding,&nbsp;Yurong Zhou,&nbsp;Dongming Zhao,&nbsp;Fanying Meng,&nbsp;Hui Yan,&nbsp;Rui Life,&nbsp;Haiwei Huang,&nbsp;Zhidan Hao,&nbsp;Yuqin Zhou,&nbsp;Fengzhen Liu","doi":"10.1002/pip.3796","DOIUrl":"10.1002/pip.3796","url":null,"abstract":"<p>Compound/silicon heterojunction (SCH) solar cells have been widely studied because of the low parasitic absorption of the window layer, high short-circuit current, and simple preparation process. So far, most reported SCH solar cells are small-area devices. By depositing MoO_x hole transport layer using hot-wire oxidation–sublimation deposition technique and employing a front-contact back-junction cell architecture, the large-area SCH solar cells are successfully fabricated on M6 (166 mm) n-type silicon wafers. Indium cerium oxide (ICO) film with the optimal thickness of about 110 nm is inserted between MoO_x and Ag. The ICO/Ag stack functions well as a back reflector and is beneficial for increasing the short-circuit current density, reducing the contact resistance, and improving the device stability. A power conversion efficiency of 21.59% is achieved on the champion SCH solar cell with the device area of 274.15 cm².</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 9","pages":"599-606"},"PeriodicalIF":8.0,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140045746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Realizing SnF2-TMAB passivated lead-free formamidinum perovskite solar cells with doctor-bladed carbon electrode","authors":"Debesh Devadutta Mishra,&nbsp;Pranati Kumari Rath,&nbsp;Natarajan Thirugnanam,&nbsp;Tao Shen,&nbsp;Zihe Chen,&nbsp;Zexian Zhang,&nbsp;Xinghang Liu,&nbsp;Jinhua Li,&nbsp;Xianbao Wang,&nbsp;Cher Ming Tan","doi":"10.1002/pip.3794","DOIUrl":"10.1002/pip.3794","url":null,"abstract":"<p>The suitable band gap with outstanding optoelectronic characteristics makes Sn-based perovskites one of the promising candidates for the preparation of efficient lead-free perovskite solar cells (PSCs). However, preparing Sn²⁺-based PSCs is very difficult due to the ready oxidation of Sn²⁺ to Sn⁴⁺ when exposed to air. In this work, by incorporating the trimethylamine borane complex (TMAB) as an antioxidant additive into the perovskite precursor solution along with excess SnF₂, we report the fabrication of air-stable FASnI₃-based solar cells. The complex formed by TMAB-SNF₂ (additive layer) enables in-situ encapsulation of perovskite grains. This layer considerably improves the oxidation stability of the perovskite layer by eliminating oxygen vacancies from the NiO hole transport. The resulting PSCs can maintain more than 70% of the efficiency over 45 and 75 hours respectively in air and N₂ exposure without encapsulation. This can be regarded as a genuinely enhanced attribute, particularly considering the use of carbon in one of the electrodes in FASnI₃ perovskites. The findings suggest an alternative approach to provide effective and sustainable Sn-based PSCs in the future.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 8","pages":"569-578"},"PeriodicalIF":8.0,"publicationDate":"2024-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139987747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evidence of hot carrier extraction in metal halide perovskite solar cells","authors":"Shashi Sourabh,&nbsp;Hadi Afshari,&nbsp;Vincent R. Whiteside,&nbsp;Giles E. Eperon,&nbsp;Rebecca A. Scheidt,&nbsp;Tielyr D. Creason,&nbsp;Madalina Furis,&nbsp;Ahmad R. Kirmani,&nbsp;Bayram Saparov,&nbsp;Joseph M. Luther,&nbsp;Matthew C. Beard,&nbsp;Ian R. Sellers","doi":"10.1002/pip.3777","DOIUrl":"10.1002/pip.3777","url":null,"abstract":"<p>The presence of hot carriers is presented in the operational properties of an (FA,Cs)Pb(I, Br, Cl)₃ solar cell at ambient temperatures and under practical solar concentration. Albeit, in a device architecture that is not suitably designed as a functional hot carrier solar cell. At 100 K, clear evidence of hot carriers is observed in both the high energy tail of the photoluminescence spectra and from the appearance of a nonequilibrium photocurrent at higher fluence in light <i>J–V</i> measurements. At room temperature, however, the presence of hot carriers in the emission at elevated laser fluence is shown to compete with a gradual red shift in the PL peak energy as photoinduced halide segregation begins to occur at higher lattice temperature. The effects of thermionic emission of hot carriers and the presence of a nonequilibrium carrier distribution are also shown to be distinct from simple lattice heating. This results in large unsaturated photocurrents at high powers as the Fermi distribution exceeds that of the heterointerface controlling carrier transport and rectification.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 8","pages":"546-555"},"PeriodicalIF":8.0,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Implementation of nickel and copper as cost-effective alternative contacts in silicon solar cells","authors":"Veysel Unsur","doi":"10.1002/pip.3792","DOIUrl":"10.1002/pip.3792","url":null,"abstract":"<p>Efficient metal contact formation is pivotal for the production of cost-effective, high-performance crystalline silicon (Si) solar cells. Traditionally, screen-printed silver (Ag) contacts on the front surface have dominated the industry owing to their simplicity, high throughput, and significant electrical benefits. However, the high cost associated with using over 13–20 mg/Wp of Ag can impede the development of truly cost-effective solar cells. Therefore, there is an urgent need to explore alternative, economically viable metals compatible with silicon substrates. This study reports on the application of a contact stack consisting of Ag, nickel (Ni), and copper (Cu) in Si solar cells. To prevent Schottky contact formation, Ag is implemented as a seed layer, whereas Ni and Cu form the metal bulk layer. The fabricated bi-layer stack without selective emitter exhibits a maximum efficiency of ~21.5%, a fill factor of 81.5%, and an average contact resistance of 5.88 mΩ·cm² for a monofacial PERC cell. Microstructure analysis demonstrates that the metals within the contacts remain distinct, and Cu diffusion into the silicon during the firing process is absent. Consequently, printed bi-layer contacts emerge as a promising alternative to Ag contacts, reducing the Ag consumption to below 2.5 mg/Wp per cell without compromising overall efficiency.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 4","pages":"267-275"},"PeriodicalIF":6.7,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3792","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photon upconversion assisted ferroelectric photovoltaics: Device configuration with multifaceted influence in augmenting the photovoltaic response of BiFeO3 thin-film solar cells","authors":"Waseem Ahmad Wani,&nbsp;Gaurav Gupta,&nbsp;Shyama Rath,&nbsp;Harihara Venkataraman,&nbsp;Kannan Ramaswamy","doi":"10.1002/pip.3793","DOIUrl":"10.1002/pip.3793","url":null,"abstract":"<p>This work presents a novel paradigm for upconversion-assisted ferroelectric photovoltaic devices. The system comprises a ferroelectric active layer (BiFeO₃), an upconverter layer (Yb; Er-doped ZnO), a conductive ITO-coated glass substrate, and a reflective coating (Al) at the rear end of the glass substrate. The photovoltaic efficiency of the single-layer BFO was found to be 0.71%. With the prescribed device model, the total solar efficiency of BiFeO₃ improved significantly and touched solar conversion efficiency of 2.21%. This model's projection widens the future perspectives of device performance in emerging photovoltaic technology, mainly perovskite-based solar cells.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 8","pages":"556-568"},"PeriodicalIF":8.0,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139946086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Composition dependence of electronic defects in CuGaS2","authors":"Damilola Adeleye,&nbsp;Mohit Sood,&nbsp;Michele Melchiorre,&nbsp;Alice Debot,&nbsp;Susanne Siebentritt","doi":"10.1002/pip.3778","DOIUrl":"10.1002/pip.3778","url":null,"abstract":"<p>CuGaS₂ films grown by physical vapor deposition were studied by photoluminescence (PL) spectroscopy, using excitation intensity and temperature-dependent analyses. We observed free and bound exciton recombinations, three donor-to-acceptor (DA) transitions, and deep-level transitions. The DA transitions at ~2.41, 2.398, and ~2.29 eV are attributed to a common donor level ~35 meV and two shallow acceptors at ~75 and ~90 meV and a deeper acceptor at 210 meV above the valence band. This electronic structure is similar to those of other chalcopyrite materials. The observed DA transitions are accompanied by several phonon replicas. The Cu-rich and near-stoichiometric CuGaS₂ films are dominated by transitions involving the acceptor at 210 meV. All films show deep-level transitions at ~2.15 and 1.85 eV due to broad deep defect bands. The slightly Cu-deficient films were dominated by intense transitions at ~2.45 eV, which were attributed to excitonic transitions, and a broad defect transition at 2.15 eV.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 8","pages":"528-545"},"PeriodicalIF":8.0,"publicationDate":"2024-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3778","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139945979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Long-term outdoor study of an organic photovoltaic module for building integration","authors":"Wei Luo,&nbsp;Aung Myint Khaing,&nbsp;Carlos David Rodriguez-Gallegos,&nbsp;Shin Woei Leow,&nbsp;Thomas Reindl,&nbsp;Mauro Pravettoni","doi":"10.1002/pip.3791","DOIUrl":"10.1002/pip.3791","url":null,"abstract":"<p>Organic photovoltaics (OPV) has attracted tremendous attention as a promising alternative to silicon wafer-based technologies for building integration. While significant progress has been achieved on the power conversion efficiency of OPV technologies, their field stability is rarely studied. This work investigates the field performance and reliability of a large-area OPV module designed for building integration in tropical Singapore for 4.5 years. The device suffered more than 14% degradation in power at the standard testing conditions from the initial performance, largely due to losses in fill factor (−12% relative). During the monitoring period, it exhibited comparable performance to more conventional silicon PV technologies, with an average specific energy yield of about 4 kWh/kWp/day and an average performance ratio of 0.96. Excellent performance at low light conditions was also observed. However, its field performance was heavily impacted by soiling, which typically led to a 5 to 10% loss in the current output after several months. Further, the device's outdoor performance also showed a three-stage degradation process, including (1) an initial slow degradation in the first 2 years (about −1%/year), (2) a stable period with negligible performance loss from Years 2 to 3.5, and (3) a rapid degradation in the last year (about −5%/year).</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 7","pages":"481-491"},"PeriodicalIF":8.0,"publicationDate":"2024-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3791","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139909565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantifying spectral albedo effects on bifacial photovoltaic module measurements and system model predictions","authors":"Erin M. Tonita,&nbsp;Christopher E. Valdivia,&nbsp;Annie C. J. Russell,&nbsp;Michael Martinez-Szewczyk,&nbsp;Mariana I. Bertoni,&nbsp;Karin Hinzer","doi":"10.1002/pip.3789","DOIUrl":"10.1002/pip.3789","url":null,"abstract":"<p>We provide a comprehensive analysis of the effect of spectral albedo on photovoltaic (PV) module measurements and system model predictions. We demonstrate how to account for albedo in indoor bifacial device measurements by adjusting the applied irradiance using the scaled rear irradiance method, exemplified on fabricated silicon heterojunction (SHJ) modules. System model performance is studied using a detailed 3D finite-element model, DUET, for fixed-tilt and horizontal single-axis tracked (SAT) arrays between 15 and 75°N. Spectral effects cause variations in measured SHJ module short-circuit current up to 2% and efficiency variation up to 0.3% abs. We further demonstrate that rear-side spectral mismatch factors (SMMs) resulting from including or omitting spectral albedo in PV system modeling vary between ±13%, while total (front+rear) SMMs vary up to 3%, depending on the deployment configuration and latitude. SAT array SMMs are weakly correlated with latitude, while fixed-tilt array SMMs increase with latitude, driven by an increasing proportion of ground-reflected light on the front-side of modules. Ground-reflections can constitute between 2% and 32% of total incident module irradiance, with notably high (&gt;10%) contributions for fixed-tilt arrays at high latitude. Effects of spectral albedo are most significant for: (1) fixed-tilt deployments at high latitudes, (2) wide bandgap technologies such as perovskite and cadmium telluride cells, (3) albedos which vary steeply over the technology's absorption range, and (4) high albedo ground covers. Overall, we demonstrate that omitting spectral albedo effects can result in PV measurement and system-level modeling uncertainties on the order of several percent in these cases.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 7","pages":"468-480"},"PeriodicalIF":8.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3789","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139768872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}