T. D. Subash, Devi Arumugam, S. Vijayalakshmi, T. D. Subha, Yun Gao
{"title":"Optimized Three-Layer Carbon Electrode Architecture for High-Performance CsPbI3 Perovskite Solar Cells","authors":"T. D. Subash, Devi Arumugam, S. Vijayalakshmi, T. D. Subha, Yun Gao","doi":"10.1002/pip.70117","DOIUrl":"https://doi.org/10.1002/pip.70117","url":null,"abstract":"<div>\u0000 \u0000 <p>Perovskite solar cells (PSCs), particularly cesium lead iodide (CsPbI<sub>3</sub>)–based ones, offer low fabrication costs, high efficiency, and potential for scalable production. However, a significant drawback is their instability, especially under moisture and high-temperature conditions, which can lead to degradation and reduced long-term performance. To overcome these issues, this paper presents a novel approach for optimized three-layer carbon electrode (CE) architecture for high-performance CsPbI<sub>3</sub> PSCs. The proposed method integrates the capabilities of leaf in wind optimization (LWO) algorithm and progressive graph convolutional networks (PGCNs), forming a model termed LWO–PGCN. The main goals of the proposed technique are to develop the power conversion efficiency (PCE) and stability of PSCs. The LWO algorithm performs global optimization of structural parameters, while the PGCN model predicts photovoltaic performance by capturing complex relationships between device parameters, enabling efficient identification of high-performance device configurations. The LWO algorithm is employed to optimize perovskite layer thickness, hole transport material (HTM) layer thickness. The PGCN is used to predict the PCE with high accuracy. The proposed method demonstrates better performance than existing techniques, including deep neural network (DNN), probabilistic neural networks (PNN), and artificial neural network (ANN), as evaluated and compared using the MATLAB platform. The proposed method achieves a higher PCE of 29.9%, short-circuit current density (<i>J</i><sub><i>sc</i></sub>) of 25.84 mA/cm<sup>2</sup>, open-circuit voltage (<i>V</i><sub><i>oc</i></sub>) of 1.32 V, and fill factor (FF) of 74.89%, indicating superior photovoltaic performance compared with existing methods. The proposed LWO-PGCN model significantly enhances the stability and efficiency of CsPbI<sub>3</sub>-based PSCs, outperforming existing methods in photovoltaic performance.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1173-1188"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electrochemical Modeling of PID Leakage Current of PV Modules: Steady-State Current, Transient Current, and RC-Equivalent Circuit","authors":"GovindaSamy TamizhMani, Fang Li, Cécile Molto, Hubert Seigneur, Peter Hacke, Jaewon Oh","doi":"10.1002/pip.70113","DOIUrl":"https://doi.org/10.1002/pip.70113","url":null,"abstract":"<div>\u0000 \u0000 <p>Potential-induced degradation (PID) remains a significant reliability concern for photovoltaic (PV) modules, arising when a voltage difference between the module frame and the solar cells drives unintended leakage current through the glass–encapsulant stack. Although PID ultimately manifests as PID-s, PID-p, or PID-c, the underlying behavior of the leakage current—its magnitude and time dependence—requires clearer electrochemical interpretation. Traditional explanations attribute the initial transient current to bulk capacitive elements of the glass, encapsulant, and antireflection coatings, and the steady-state current according to their effective ohmic resistance. More recent studies, however, indicate that electrochemical charge-transfer processes at the encapsulant–metallization interface can play a dominant role in defining the leakage-current path. This paper develops a unified electrochemical framework for modeling PID leakage current. First, an RC-equivalent circuit is formulated by combining conventional RC elements with a Randles-type interface to capture transient leakage current through double-layer capacitance and faradaic processes at ionic–electronic boundaries. Second, the steady-state current–voltage behavior is explained using a linearized Butler–Volmer relationship, showing that the measured ohmic response corresponds to the low-overpotential limit of charge-transfer kinetics. Analytical results demonstrate that, for typical module materials—3.2-mm soda-lime glass and 0.45-mm encapsulant—the dominant modulators to PID leakage current are the glass surface resistance (under dry-surface conditions), the glass bulk capacitance, and the encapsulant resistance (under wet-surface conditions), with soda lime glass surface and EVA/POE encapsulant resistances primarily governing steady-state current. The proposed electrochemical model is validated against measured leakage-current data, showing good agreement in both the magnitude and the time-dependent evolution of PID leakage current.</p>\u0000 </div>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1100-1112"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuchi Lan, John Derek Arcebal, Gabby De Luna, Pradeep Padhamnath, Armin Gerhard Aberle, Aaron Danner
{"title":"Ultra-Thin Bipoly Solar Cells With Front Selective \u0000\u0000 n-Type TOPCon and Rear Blanket \u0000\u0000 p-Type TOPCon Layers","authors":"Yuchi Lan, John Derek Arcebal, Gabby De Luna, Pradeep Padhamnath, Armin Gerhard Aberle, Aaron Danner","doi":"10.1002/pip.70114","DOIUrl":"https://doi.org/10.1002/pip.70114","url":null,"abstract":"<p>This study investigates ultra-thin silicon solar cells with polysilicon (poly-Si) passivated contacts on both sides (biPoly cells). Low-pressure chemical vapor deposition (LPCVD) was used for the deposition of front and rear poly-Si layers along with a complete passivation structure. Patterning of the top \u0000<span></span><math>\u0000 <msup>\u0000 <mrow>\u0000 <mi>n</mi>\u0000 </mrow>\u0000 <mrow>\u0000 <mo>+</mo>\u0000 </mrow>\u0000 </msup></math> poly-Si layer was used to restrict it to the metal-finger regions, thereby improving carrier lifetime and useful light absorption. A saw damage etching (SDE) process with varied time was used for thinning down the silicon (Si) substrates. The thinnest bendable cell achieved is 80 \u0000<span></span><math>\u0000 <mi>μ</mi></math>m thick, with an efficiency of 19.7%. Because cell mass per area approximately scales with silicon thickness, the efficiency-to-thickness ratio is a practical proxy for specific power in lightweight/flexible use-cases. Our devices reach 0.25% per \u0000<span></span><math>\u0000 <mi>μ</mi></math>m, to our knowledge among the highest reported for TOPCon cells at comparable thickness. The results highlight the potential of selective biPoly passivated ultra-thin silicon solar cells for high-performance photovoltaic applications.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"34 9","pages":"1113-1124"},"PeriodicalIF":10.2,"publicationDate":"2026-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.70114","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148662717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}