Progress in Photovoltaics最新文献

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Photovoltaics literature survey (No. 189) 光伏文献调查(第 189 号)
IF 6.7 2区 材料科学
Progress in Photovoltaics Pub Date : 2024-02-01 DOI: 10.1002/pip.3773
Ziv Hameiri
{"title":"Photovoltaics literature survey (No. 189)","authors":"Ziv Hameiri","doi":"10.1002/pip.3773","DOIUrl":"https://doi.org/10.1002/pip.3773","url":null,"abstract":"<p>In order to help readers stay up-to-date in the field, each issue of <i>Progress in Photovoltaics</i> will contain a list of recently published journal articles that are most relevant to its aims and scope. This list is drawn from an extremely wide range of journals, including <i>IEEE Journal of Photovoltaics</i>, <i>Solar Energy Materials and Solar Cells</i>, <i>Renewable Energy</i>, <i>Renewable and Sustainable Energy Reviews</i>, <i>Journal of Applied Physics</i>, and <i>Applied Physics Letters</i>. To assist readers, the list is separated into broad categories, but please note that these classifications are by no means strict. Also note that inclusion in the list is not an endorsement of a paper's quality. If you have any suggestions please email Ziv Hameiri at <span>[email protected]</span>.</p><p>Vicari Stefani B, Kim M, Zhang Y, et al. <b>Historical market projections and the future of silicon solar cells.</b> <i>Joule</i> 2023; <b>7</b>(12): 2684-2699.</p><p>Zhang CP, Wei K, Hu JF, et al. <b>A review on organic hole transport materials for perovskite solar cells: Structure, composition and reliability.</b> <i>Materials Today</i> 2023; <b>67</b>: 518-547.</p><p>Zhang JX, Chen XY, Wei HK, et al. <b>A lightweight network for photovoltaic cell defect detection in electroluminescence images based on neural architecture search and knowledge distillation.</b> <i>Applied Energy</i> 2024; <b>355</b>: 122184.</p><p>Pan JX, Chen ZM, Zhang TK, et al. <b>Operando dynamics of trapped carriers in perovskite solar cells observed via infrared optical activation spectroscopy.</b> <i>Nature Communications</i> 2023; <b>14</b>(1): 8000.</p><p>Lorenzo E, Moretón R, Solorzano J, et al. <b>On outdoor testing procedures of large samples of PV modules.</b> <i>Progress in Photovoltaics: Research and Applications</i> 2024; <b>32</b>(1): 14-24.</p><p>Grant NE, Pain SL, Khorani E, et al. <b>Activation of Al</b><sub><b>2</b></sub><b>O</b><sub><b>3</b></sub> <b>surface passivation of silicon: Separating bulk and surface effects.</b> <i>Applied Surface Science</i> 2024; <b>645</b>: 158786.</p><p>Yue ZY, Wang GY, Huang ZG, et al. <b>Excellent crystalline silicon surface passivation by transparent conductive Al-doped ZnO/ITO stack.</b> <i>Applied Surface Science</i> 2024; <b>645</b>: 158845.</p><p>Xing C, Jiang C, Gu W, et al. <b>SrF</b><sub><b>x</b></sub><b>-based electron-selective contact with high tolerance to thickness for crystalline silicon solar cells enabling efficiency over 21%.</b> <i>Progress in Photovoltaics: Research and Applications</i> 2024; <b>32</b>(1): 35-44.</p><p>Luo HW, Zheng XT, Kong WC, et al. <b>Inorganic framework composition engineering for scalable fabrication of perovskite/silicon tandem solar cells.</b> <i>Acs Energy Letters</i> 2023; <b>8</b>(12): 4993-5002.</p><p>Dipon MNA, Sahriar MA, Sarker S, et al. <b>A comprehensive study of mechanically stacked tandem photovoltaic devices: Materials selection and efficiency analysis using SCAPS.</b>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 3","pages":"212-215"},"PeriodicalIF":6.7,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3773","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139676407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Prevention of potential-induced degradation using a moisture barrier in crystalline silicon photovoltaic modules 在晶体硅光伏组件中使用防潮层防止电位引起的降解
IF 6.7 2区 材料科学
Progress in Photovoltaics Pub Date : 2024-01-30 DOI: 10.1002/pip.3783
Solhee Lee, Kyung Dong Lee, Soohyun Bae, Yoonmook Kang, Donghwan Kim, Hae-Seok Lee
{"title":"Prevention of potential-induced degradation using a moisture barrier in crystalline silicon photovoltaic modules","authors":"Solhee Lee,&nbsp;Kyung Dong Lee,&nbsp;Soohyun Bae,&nbsp;Yoonmook Kang,&nbsp;Donghwan Kim,&nbsp;Hae-Seok Lee","doi":"10.1002/pip.3783","DOIUrl":"10.1002/pip.3783","url":null,"abstract":"<p>As photovoltaic (PV) modules are exposed to high temperatures and humidity over time, they generate leakage current, which leads to potential-induced degradation (PID) and lower power output. In silicon, Cu(In,Ga)(Se,S)<sub>2</sub> (CIGS) thin film and perovskite solar cells, PID has been shown to be driven by the presence of Na in the module glass. PID stability is crucial for the commercialization of such solar modules. This study aims to confirm the leaching phenomenon of Na in soda–lime module glass and study the use of polytetrafluoroethylene (PTFE) as a moisture barrier to prevent PID. By water immersion and exposure to different temperature and humidity conditions, we exhibited Na leaching in soda–lime glass. Moreover, we demonstrate the use of an anti-PID moisture barrier made of PTFE, which was deposited using kinetic spraying between the cover glass and encapsulant in the solar module. The thickness of the moisture barrier was controlled by adjusting the deposition rate, and the PID characteristics were evaluated by manufacturing solar modules for different barrier thicknesses. Light current–voltage (LIV), dark current–voltage (DIV), and electroluminescence (EL) measurements confirmed that the PTFE moisture barrier effectively inhibits the degradation of solar cells. This study provides further insights into the Na leaching phenomenon and PID mechanism in PV modules and contributes to the design and development of more stable solar cells.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 6","pages":"390-398"},"PeriodicalIF":6.7,"publicationDate":"2024-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140485299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A precise method for the spectral adjustment of LED and multi-light source solar simulators 发光二极管和多光源太阳模拟器光谱调整的精确方法
IF 6.7 2区 材料科学
Progress in Photovoltaics Pub Date : 2024-01-26 DOI: 10.1002/pip.3776
David Chojniak, Michael Schachtner, S. Kasimir Reichmuth, Alexander J. Bett, Michael Rauer, Jochen Hohl-Ebinger, Alexandra Schmid, Gerald Siefer, Stefan W. Glunz
{"title":"A precise method for the spectral adjustment of LED and multi-light source solar simulators","authors":"David Chojniak,&nbsp;Michael Schachtner,&nbsp;S. Kasimir Reichmuth,&nbsp;Alexander J. Bett,&nbsp;Michael Rauer,&nbsp;Jochen Hohl-Ebinger,&nbsp;Alexandra Schmid,&nbsp;Gerald Siefer,&nbsp;Stefan W. Glunz","doi":"10.1002/pip.3776","DOIUrl":"10.1002/pip.3776","url":null,"abstract":"<p>Solar simulators based on light-emitting diodes (LEDs) usually consist of many spectrally different LEDs, which in sum produce a sun-like spectrum. On the one hand, this results in the advantage of a high spectral tunability of these systems and on the other hand, however, also in the challenge of a high number of parameters which have to be set for the adjustment of a suitable simulator spectrum. Multijunction solar cells consisting of series-connected subcells are very sensitive to spectral irradiance conditions, which are affecting the current and the fill factor of the device. A precise adjustment of the simulator spectrum based on the spectral responsivity of the subcells is therefore essential for accurate multijunction measurements. Therefore, the number of spectrally different light sources used should be at least as high as the number of subcells in the device under test. However, for the measurement of multijunction devices, the much higher number of spectrally different light sources in common LED solar simulators results in a plethora of different simulator spectra, potentially suitable for the measurement. Furthermore, the nonlinear intensity characteristics of the utilized LEDs as well as the distance-dependent illumination uniformity of such solar simulators add complexity when aiming for a precise spectral adjustment. To tackle these challenges, a new spectral adjustment procedure which is based on a least square's solution algorithm and the definition of appropriate boundary conditions for the calculation of suitable simulator settings is introduced in this publication. Focusing on measurements carried out under constant illumination makes the presented method especially applicable for perovskite-on-silicon multijunction devices. Therefore, an adapted method for the determination of the solar simulator's spectral properties, considering thermal influences which are particularly relevant when carrying out continuous illumination measurements, is introduced in this work. The presented method is verified applying it on a Wavelabs SINUS 220 LED solar simulator by performing a measurement comparison on a multijunction solar cell with Fraunhofer ISE CalLab's well-established multilight source solar simulator.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 6","pages":"372-389"},"PeriodicalIF":6.7,"publicationDate":"2024-01-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3776","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139584857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Approaches for III-V/Si tandem solar cells and comparative studies on Si tandem solar cells III-V/Si 串联太阳能电池的方法和硅串联太阳能电池的比较研究
IF 8 2区 材料科学
Progress in Photovoltaics Pub Date : 2024-01-25 DOI: 10.1002/pip.3780
Masafumi Yamaguchi, Tatsuya Takamoto, Hiroyuki Juso, Kyotaro Nakamura, Ryo Ozaki, Taizo Masuda, Takashi Mabuchi, Kenichi Okumura, Nobuaki Kojima, Yoshio Ohshita
{"title":"Approaches for III-V/Si tandem solar cells and comparative studies on Si tandem solar cells","authors":"Masafumi Yamaguchi,&nbsp;Tatsuya Takamoto,&nbsp;Hiroyuki Juso,&nbsp;Kyotaro Nakamura,&nbsp;Ryo Ozaki,&nbsp;Taizo Masuda,&nbsp;Takashi Mabuchi,&nbsp;Kenichi Okumura,&nbsp;Nobuaki Kojima,&nbsp;Yoshio Ohshita","doi":"10.1002/pip.3780","DOIUrl":"10.1002/pip.3780","url":null,"abstract":"<p>Photovoltaic (PV)-powered vehicle applications are very attractive for reducing CO<sub>2</sub> emission and creation of new market. Development of Si tandem solar cells is very promising for high-efficiency and low-cost solar cells. This paper presents our approaches for III–V/Si 3-junction tandem solar cells. In this paper, 24.9% efficiency Si heterojunction solar cells and mechanically stacked four-terminal 35.8% InGaP/GaAs/Si three-junction tandem solar cell are shown. Roadmap for realizing high-efficacy three-junction tandem solar cells of more than 40% is discussed in this paper. Because efficiencies of record cell of 36.1% with III–V/Si three-junction tandem cells and 33.9% with perovskite/Si two-junction cells are lower compared to 39.5% with III–V three-junction solar cells, it is necessary to clarify and reduce several losses of Si tandem solar cells. This paper presents high efficiency potential of III–V/Si three-junction and perovskite/Si two-junction solar cells analyzed by using our analytical procedure and discusses about non-radiative recombination, optical, and resistance losses in those Si tandem cells. Current status of various solar cell module efficiencies including our new record efficiency Si tandem solar cell module with an efficiency of 33.66% is also analyzed.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 1","pages":"116-125"},"PeriodicalIF":8.0,"publicationDate":"2024-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139584935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Field-representative evaluation of PID-polarization in TOPCon PV modules by accelerated stress testing 通过加速应力测试对 TOPCon 光伏组件的 PID 极化进行现场代表性评估
IF 6.7 2区 材料科学
Progress in Photovoltaics Pub Date : 2024-01-25 DOI: 10.1002/pip.3774
Peter Hacke, Sergiu Spataru, Brian Habersberger, Yifeng Chen
{"title":"Field-representative evaluation of PID-polarization in TOPCon PV modules by accelerated stress testing","authors":"Peter Hacke,&nbsp;Sergiu Spataru,&nbsp;Brian Habersberger,&nbsp;Yifeng Chen","doi":"10.1002/pip.3774","DOIUrl":"10.1002/pip.3774","url":null,"abstract":"<p>Potential-induced degradation-polarization (PID-p) can reduce module power, but how to project the extent to which PID-p may occur in field conditions considering the factors of system voltage, condensed moisture, temperature, and illumination has not been clarified. Using tunnel oxide passivated contact (TOPCon) modules, this work demonstrates a method to test full-size crystalline silicon PV modules for PID-p to provide field-representative results. In initial screening tests with positive or negative 1000 V electrical bias applied at 60°C for 96 h using Al foil electrodes on the glass surfaces, the module type exhibited reversible PID-p only on the front face when the cell circuit was in negative voltage potential. No PID was detected on the rear after testing in either polarity. We then evaluated the PID-p sensitivity on the front side under different UV irradiances while maintaining the glass surface wet to estimate real-world susceptibility to PID-p. The magnitude of the observed behavior was fit using a previously developed charge transfer and depletion by light model. Whereas power loss with −1000 V applied to the cell circuit at 60°C for 96 h in the dark was about 30%, testing the module front under 0.051 W·m<sup>−2</sup> nm<sup>−1</sup> at 340 nm UVA irradiation using fluorescent tubes, the mean degradation was only 3%. When the modules were tested in the dark for PID-p with in situ dark current–voltage (I-V) characterization, the thermal activation energy for degradation was 0.71 eV; for recovery in the dark, it was 0.58 eV. Whereas recovery from the degraded state at 60°C in the dark without voltage bias was 5% absolute in 38 h, rapid recovery of about 5% absolute was observed with 1000 W·s/m<sup>2</sup> exposure at 25°C using a flash tester.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 5","pages":"346-355"},"PeriodicalIF":6.7,"publicationDate":"2024-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3774","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139584862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Unveiling the mechanism of attaining high fill factor in silicon solar cells 揭示硅太阳能电池获得高填充因子的机理
IF 6.7 2区 材料科学
Progress in Photovoltaics Pub Date : 2024-01-25 DOI: 10.1002/pip.3775
Hao Lin, Genshun Wang, Qiao Su, Can Han, Chaowei Xue, Shi Yin, Liang Fang, Xixiang Xu, Pingqi Gao
{"title":"Unveiling the mechanism of attaining high fill factor in silicon solar cells","authors":"Hao Lin,&nbsp;Genshun Wang,&nbsp;Qiao Su,&nbsp;Can Han,&nbsp;Chaowei Xue,&nbsp;Shi Yin,&nbsp;Liang Fang,&nbsp;Xixiang Xu,&nbsp;Pingqi Gao","doi":"10.1002/pip.3775","DOIUrl":"10.1002/pip.3775","url":null,"abstract":"<p>A world record conversion efficiency of 26.81% has been achieved recently by LONGi team on a solar cell with industry-grade silicon wafer (274 cm<sup>2</sup>, M6 size). An unparalleled high fill factor (<i>FF</i>) of up to 86.59% has also been certified in a separated device. The theoretical <i>FF</i> limit has been predicted to be 89.26%, while the practical <i>FF</i> is far below this limit for a prolonged interval due to the constraints of recombination (i.e., SRH recombination) and series resistance. The ideality factor (<i>m</i>) in the equivalent circuit of silicon solar cells is consistently ranging from 1 to 2 and rarely falls below 1, resulting in a relatively lower <i>FF</i> than 85%. Here, this work complements a systematic simulation study to demonstrate how to approach the <i>FF</i> limit in design of silicon solar cells. Firstly, a diode component with an ideality factor equal to 2/3 corresponding to Auger recombination is incorporated in the equivalent circuit for LONGi ultra-high <i>FF</i> solar cell; Secondly, an advanced equivalent circuit is put forward for comprehensive analysis of bulk recombination and surface recombination on the performance, in which specific ideality factors are directly correlated with various recombination mechanisms exhibiting explicit reverse saturation current density (<i>J</i><sub>0</sub>). Finally, we evaluate precisely the route for approaching theoretical <i>FF</i> in practical solar cell fabrication based on electrical design parameters using the developed model.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 6","pages":"359-371"},"PeriodicalIF":6.7,"publicationDate":"2024-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3775","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139584854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A collaborative framework for unifying typical multidimensional solar cell simulations – Part I. Ten common simulation steps and representing variables 统一典型多维太阳能电池模拟的协作框架--第一部分:十个常用模拟步骤和代表变量
IF 6.7 2区 材料科学
Progress in Photovoltaics Pub Date : 2024-01-23 DOI: 10.1002/pip.3779
Fa-Jun Ma, Shaozhou Wang, Chuqi Yi, Lang Zhou, Ziv Hameiri, Stephen Bremner, Xiaojing Hao, Bram Hoex
{"title":"A collaborative framework for unifying typical multidimensional solar cell simulations – Part I. Ten common simulation steps and representing variables","authors":"Fa-Jun Ma,&nbsp;Shaozhou Wang,&nbsp;Chuqi Yi,&nbsp;Lang Zhou,&nbsp;Ziv Hameiri,&nbsp;Stephen Bremner,&nbsp;Xiaojing Hao,&nbsp;Bram Hoex","doi":"10.1002/pip.3779","DOIUrl":"10.1002/pip.3779","url":null,"abstract":"<p>Multidimensional simulations for diverse solar cells often encounter distinctive configurations, even when employing the same simulation software. The complexity and inefficiency of this process are further exacerbated when employing different simulators. From our extensive decade-long experience in numerical simulations of diverse solar cells, we have identified ten common simulation steps intrinsic to typical electrical and optical simulations. Subsequently, we propose ten sets of variables that encompass all the relevant details required for these steps. To address the challenge of varying information requirements for each variable across different simulations, we assign a list, a versatile data type, to each variable. This approach, by design, enables concise, coherent, and flexible input, accommodating the unique demands of each simulation. However, to ensure unambiguous simulations, precise specifications for these variables are essential. Computer code has been successfully implemented to ensure adherence to specifications and expedite variable synchronization with Sentaurus, the de facto standard for device simulation. Within this framework, users are only tasked with editing variables in a plain text file, obviating the need for in-depth knowledge of Sentaurus. This streamlines the prerequisites for engaging in numerical simulation significantly. Through thoughtful design considerations, we preserve the simulation capacity while simultaneously enhancing productivity considerably. This open-source framework welcomes global collaboration within the photovoltaic community and has the potential to generate an extensive dataset for cost-effective artificial intelligence training.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 5","pages":"330-345"},"PeriodicalIF":6.7,"publicationDate":"2024-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3779","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139584959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface saturation current densities of perovskite thin films from Suns-photoluminescence quantum yield measurements 从太阳-光致发光量子产率测量得出的过氧化物薄膜表面饱和电流密度
IF 8 2区 材料科学
Progress in Photovoltaics Pub Date : 2024-01-15 DOI: 10.1002/pip.3767
Robert Lee Chin, Arman Mahboubi Soufiani, Paul Fassl, Jianghui Zheng, Eunyoung Choi, Anita Ho-Baillie, Ulrich W. Paetzold, Thorsten Trupke, Ziv Hameiri
{"title":"Surface saturation current densities of perovskite thin films from Suns-photoluminescence quantum yield measurements","authors":"Robert Lee Chin,&nbsp;Arman Mahboubi Soufiani,&nbsp;Paul Fassl,&nbsp;Jianghui Zheng,&nbsp;Eunyoung Choi,&nbsp;Anita Ho-Baillie,&nbsp;Ulrich W. Paetzold,&nbsp;Thorsten Trupke,&nbsp;Ziv Hameiri","doi":"10.1002/pip.3767","DOIUrl":"10.1002/pip.3767","url":null,"abstract":"<p>We present a simple yet powerful analysis of Suns-photoluminescence quantum yield measurements that can be used to determine the surface saturation current densities of thin film semiconductors. We apply the method to state-of-the-art polycrystalline perovskite thin films of varying absorber thickness. We show that the non-radiative bimolecular recombination in these samples originates from the surfaces. To the best of our knowledge, this is the first study to demonstrate and quantify non-linear (bimolecular) surface recombination in perovskite thin films.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 1","pages":"109-115"},"PeriodicalIF":8.0,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3767","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139515063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wafer-bonded two-terminal III-V//Si triple-junction solar cell with power conversion efficiency of 36.1% at AM1.5g 晶圆键合两端 III-V//Si 三结太阳能电池,AM1.5g 功率转换效率达 36.1%
IF 8 2区 材料科学
Progress in Photovoltaics Pub Date : 2024-01-09 DOI: 10.1002/pip.3769
Patrick Schygulla, Ralph Müller, Oliver Höhn, Michael Schachtner, David Chojniak, Andrea Cordaro, Stefan Tabernig, Benedikt Bläsi, Albert Polman, Gerald Siefer, David Lackner, Frank Dimroth
{"title":"Wafer-bonded two-terminal III-V//Si triple-junction solar cell with power conversion efficiency of 36.1% at AM1.5g","authors":"Patrick Schygulla,&nbsp;Ralph Müller,&nbsp;Oliver Höhn,&nbsp;Michael Schachtner,&nbsp;David Chojniak,&nbsp;Andrea Cordaro,&nbsp;Stefan Tabernig,&nbsp;Benedikt Bläsi,&nbsp;Albert Polman,&nbsp;Gerald Siefer,&nbsp;David Lackner,&nbsp;Frank Dimroth","doi":"10.1002/pip.3769","DOIUrl":"10.1002/pip.3769","url":null,"abstract":"<p>In this work, we present the fabrication and analysis of a wafer-bonded GaInP/GaInAsP//Si triple-junction solar cell with 36.1% conversion efficiency under AM1.5g spectral illumination. The new cell design presents an improvement over previous III-V//Si triple-junction cells by the implementation of a rear-heterojunction for the middle cell. Furthermore, an advanced metallodielectric rear-side grating was used for light trapping enhancement in the silicon bottom cell that increased the silicon subcell current by 1.4 mA/cm<sup>2</sup>. The external radiative efficiency was quantified to be 1.5 times higher compared to a reference device with a GaInAsP homojunction middle cell. A luminescent coupling factor of 0.46 between the middle and bottom subcell was determined. The share of recombination in the space-charge region was experimentally shown to be insignificant as intended by the rear-heterojunction design. Overall, the open-circuit voltage of the middle cell increased by 61 mV compared to the previous generation. Given the established long-term stability of III-V and silicon-based solar cells, these results are promising steps towards the future employment of III-V/Si tandem solar cells.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"33 1","pages":"100-108"},"PeriodicalIF":8.0,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3769","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139411083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photovoltaics literature survey (no. 188) 光伏文献调查(第 188 号)
IF 6.7 2区 材料科学
Progress in Photovoltaics Pub Date : 2024-01-09 DOI: 10.1002/pip.3772
Ziv Hameiri
{"title":"Photovoltaics literature survey (no. 188)","authors":"Ziv Hameiri","doi":"10.1002/pip.3772","DOIUrl":"https://doi.org/10.1002/pip.3772","url":null,"abstract":"&lt;p&gt;In order to help readers stay up-to-date in the field, each issue of &lt;i&gt;Progress in Photovoltaics&lt;/i&gt; will contain a list of recently published journal articles that are most relevant to its aims and scope. This list is drawn from an extremely wide range of journals, including &lt;i&gt;IEEE Journal of Photovoltaics&lt;/i&gt;, &lt;i&gt;Solar Energy Materials and Solar Cells&lt;/i&gt;, &lt;i&gt;Renewable Energy&lt;/i&gt;, &lt;i&gt;Renewable and Sustainable Energy Reviews&lt;/i&gt;, &lt;i&gt;Journal of Applied Physics&lt;/i&gt;, and &lt;i&gt;Applied Physics Letters&lt;/i&gt;. To assist readers, the list is separated into broad categories, but please note that these classifications are by no means strict. Also note that inclusion in the list is not an endorsement of a paper's quality. If you have any suggestions please email Ziv Hameiri at &lt;span&gt;[email protected]&lt;/span&gt;.&lt;/p&gt;&lt;p&gt;Müller D, Jiang ER, Rivas-Lazaro P, et al &lt;b&gt;Indoor photovoltaics for the Internet-of-Things - A comparison of state-of-the-art devices from different photovoltaic technologies.&lt;/b&gt; &lt;i&gt;Acs Applied Energy Materials&lt;/i&gt; 2023; &lt;b&gt;6&lt;/b&gt;(20): 10404–10414.&lt;/p&gt;&lt;p&gt;Chen ZS, Sun P. &lt;b&gt;Generic technology R&amp;D strategies in dual competing photovoltaic supply chains: A social welfare maximization perspective.&lt;/b&gt; &lt;i&gt;Applied Energy&lt;/i&gt; 2024; &lt;b&gt;353&lt;/b&gt;: 122089.&lt;/p&gt;&lt;p&gt;Virtuani A, Borja Block A, Wyrsch N, et al &lt;b&gt;The carbon intensity of integrated photovoltaics.&lt;/b&gt; &lt;i&gt;Joule&lt;/i&gt; 2023; &lt;b&gt;7&lt;/b&gt;(11): 2511–2536.&lt;/p&gt;&lt;p&gt;Mirletz H, Hieslmair H, Ovaitt S, et al &lt;b&gt;Unfounded concerns about photovoltaic module toxicity and waste are slowing decarbonization.&lt;/b&gt; &lt;i&gt;Nature Physics&lt;/i&gt; 2023; &lt;b&gt;19&lt;/b&gt;(10): 1376–1378.&lt;/p&gt;&lt;p&gt;Chen Y, Chen D, Altermatt PP, et al &lt;b&gt;Technology evolution of the photovoltaic industry: Learning from history and recent progress.&lt;/b&gt; &lt;i&gt;Progress in Photovoltaics: Research and Applications&lt;/i&gt; 2023; &lt;b&gt;31&lt;/b&gt;(12): 1194–1204.&lt;/p&gt;&lt;p&gt;Hassan S, Dhimish M. &lt;b&gt;Enhancing solar photovoltaic modules quality assurance through convolutional neural network-aided automated defect detection.&lt;/b&gt; &lt;i&gt;Renewable Energy&lt;/i&gt; 2023; &lt;b&gt;219&lt;/b&gt;: 119389.&lt;/p&gt;&lt;p&gt;Lee M-H. &lt;b&gt;Predicting and analyzing the fill factor of non-fullerene organic solar cells based on material properties and interpretable machine-learning strategies.&lt;/b&gt; &lt;i&gt;Solar Energy&lt;/i&gt; 2024; &lt;b&gt;267&lt;/b&gt;: 112191.&lt;/p&gt;&lt;p&gt;Liu Q, Liu M, Wang C, et al &lt;b&gt;An efficient CNN-based detector for photovoltaic module cells defect detection in electroluminescence images.&lt;/b&gt; &lt;i&gt;Solar Energy&lt;/i&gt; 2024; &lt;b&gt;267&lt;/b&gt;: 112245.&lt;/p&gt;&lt;p&gt;Yousif H, Al-Milaji Z. &lt;b&gt;Fault detection from PV images using hybrid deep learning model.&lt;/b&gt; &lt;i&gt;Solar Energy&lt;/i&gt; 2024; &lt;b&gt;267&lt;/b&gt;: 112207.&lt;/p&gt;&lt;p&gt;Heidrich R, Barretta C, Mordvinkin A, et al &lt;b&gt;UV lamp spectral effects on the aging behavior of encapsulants for photovoltaic modules.&lt;/b&gt; &lt;i&gt;Solar Energy Materials and Solar Cells&lt;/i&gt; 2024; &lt;b&gt;266&lt;/b&gt;: 112674.&lt;/p&gt;&lt;p&gt;Nan C, Hao Y, Huang X, et al &lt;b&gt;Investigation on temperature dependence of recent high-efficiency silicon solar modules.&lt;/b&gt; &lt;i&gt;Solar Energy Ma","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 2","pages":"130-134"},"PeriodicalIF":6.7,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/pip.3772","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139406912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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