{"title":"Large-area MoOx/c-Si heterojunction solar cells with a ICO/Ag back reflector","authors":"Xu Wang, Bowen Ding, Yurong Zhou, Dongming Zhao, Fanying Meng, Hui Yan, Rui Life, Haiwei Huang, Zhidan Hao, Yuqin Zhou, Fengzhen Liu","doi":"10.1002/pip.3796","DOIUrl":null,"url":null,"abstract":"<p>Compound/silicon heterojunction (SCH) solar cells have been widely studied because of the low parasitic absorption of the window layer, high short-circuit current, and simple preparation process. So far, most reported SCH solar cells are small-area devices. By depositing MoO<sub>x</sub> hole transport layer using hot-wire oxidation–sublimation deposition technique and employing a front-contact back-junction cell architecture, the large-area SCH solar cells are successfully fabricated on M6 (166 mm) n-type silicon wafers. Indium cerium oxide (ICO) film with the optimal thickness of about 110 nm is inserted between MoO<sub>x</sub> and Ag. The ICO/Ag stack functions well as a back reflector and is beneficial for increasing the short-circuit current density, reducing the contact resistance, and improving the device stability. A power conversion efficiency of 21.59% is achieved on the champion SCH solar cell with the device area of 274.15 cm<sup>2</sup>.</p>","PeriodicalId":223,"journal":{"name":"Progress in Photovoltaics","volume":"32 9","pages":"599-606"},"PeriodicalIF":8.0000,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Photovoltaics","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/pip.3796","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 0
Abstract
Compound/silicon heterojunction (SCH) solar cells have been widely studied because of the low parasitic absorption of the window layer, high short-circuit current, and simple preparation process. So far, most reported SCH solar cells are small-area devices. By depositing MoOx hole transport layer using hot-wire oxidation–sublimation deposition technique and employing a front-contact back-junction cell architecture, the large-area SCH solar cells are successfully fabricated on M6 (166 mm) n-type silicon wafers. Indium cerium oxide (ICO) film with the optimal thickness of about 110 nm is inserted between MoOx and Ag. The ICO/Ag stack functions well as a back reflector and is beneficial for increasing the short-circuit current density, reducing the contact resistance, and improving the device stability. A power conversion efficiency of 21.59% is achieved on the champion SCH solar cell with the device area of 274.15 cm2.
期刊介绍：
Progress in Photovoltaics offers a prestigious forum for reporting advances in this rapidly developing technology, aiming to reach all interested professionals, researchers and energy policy-makers.
The key criterion is that all papers submitted should report substantial “progress” in photovoltaics.
Papers are encouraged that report substantial “progress” such as gains in independently certified solar cell efficiency, eligible for a new entry in the journal''s widely referenced Solar Cell Efficiency Tables.
Examples of papers that will not be considered for publication are those that report development in materials without relation to data on cell performance, routine analysis, characterisation or modelling of cells or processing sequences, routine reports of system performance, improvements in electronic hardware design, or country programs, although invited papers may occasionally be solicited in these areas to capture accumulated “progress”.
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