2006 IEEE Conference on Emerging Technologies - Nanoelectronics最新文献_第4页

Piezoresistivity (with uniaxial strain) in nanocrystalline films of rare-earth manganites 稀土锰纳米晶膜的压阻性(单轴应变)

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609751

J. Sarkar, A. Raychaudhuri

引用次数: 0

Microwave Properties of Fe-based Nanocrystalline Alloy Particles 铁基纳米晶合金颗粒的微波特性

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609702

P. Zhou, L. Deng, J.L. Xie, Y.Q. Liu

引用次数: 1

Growth and Characterization of Carbon Nanotubes on Porous Silicon 多孔硅上碳纳米管的生长与表征

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609753

Zhiwei Zhao, L. Pan, B. Tay, Changqing Sun

引用次数: 0

Commercialization of Nanotechnology - Taiwan Experiences 纳米科技商业化-台湾经验

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609684

T. Su

{"title":"Commercialization of Nanotechnology - Taiwan Experiences","authors":"T. Su","doi":"10.1109/NANOEL.2006.1609684","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609684","url":null,"abstract":"Taiwan National Nanoscience & Nanotechnology Program started in 2003. The budget is about US$ 600 million for six years. Compared to some countries, this is not a big number. Our strategy is to focus on industrilization. 65% of the budget was for industrialization nanotechnology. Our National Program is an industrialization driven program. Stumbling blocks to commercializing nanotechnology and Taiwan strategic initiatives to industrializing nanotechnology will be described in this paper. The stumbling blocks will be analyzed in two different phases. The first one is from science to industry. The other one is from nanoproducts to users. Taiwan strategy initiatives including government commitment, positioning of different players and infrastructure built for nanotechnology will be discussed in this paper. To industrialize nanotechnology, linking nano novel properties to applications is essential. The first approach to be presented is novel material-driven approach, which is to derive application concepts from the unique properties of a novel material. Carbon nanocapsule and tetrapod-like zinc oxide will be used as examples to illustrate our experiences. The other approach is need-driven approach. To maintain competitiveness in some products, nanotechnology could be quite helpful. Several examples, including CNT-backlight unit (BLU) and nanoclay in PU synthetic leather will be described. Nanotechnology is a hot R& D area globally. Differentiation strategy is very important. Self-cleaning paint is cited as an example to be differentiated from others. Through nanotechnology development, we believe that our daily life will be improved dramatically.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129178904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Programming Efficiency of Stacked-Gate Flash Memories with High-κ Dielectrics 高- 954堆叠门闪存的编程效率电介质

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609734

Y. Chen, C. Chien, K. Kin, J. Lou

引用次数: 3

Stable and High-Volume Electroosmotic Transport for Microfluidic Chip 微流控芯片的稳定大容量电渗透传输

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609720

T. Duong, H. N. Cheang, D. Ghista, A. Liu

引用次数: 2

Ballistic electron microscopy of a metal molecule interface 金属分子界面的弹道电子显微镜

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609710

L. Kunardi, Zheng Yi, C. Troadec, Ma Han Thu Lwin, W. Knoll, N. Chandrasekhar

引用次数: 0

Estimation of Device Parameters and C-V Modeling of Pulsed Laser Deposited Phosphorus Doped Carbon/p-Silicon Heterostructure 脉冲激光沉积磷掺杂碳/p-硅异质结构的器件参数估计及C-V建模

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609736

M.Z. Islam, S. M. Mominuzzaman

{"title":"Estimation of Device Parameters and C-V Modeling of Pulsed Laser Deposited Phosphorus Doped Carbon/p-Silicon Heterostructure","authors":"M.Z. Islam, S. M. Mominuzzaman","doi":"10.1109/NANOEL.2006.1609736","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609736","url":null,"abstract":"A heterostructure, fabricated by depositing phosphorus (P) doped carbon thin film, thickness of which is about 200 nm, on boron doped crystalline silicon (Si) substrate by pulsed laser deposition (PLD) technique, is studied in terms of its opto-electronic characteristics. Optical transmittance-reflectance measurements, temperature dependent conductivity data and the current density-voltage (J-V) characteristics of the heterostructure are analyzed to estimate device parameters, such as built-in potential, reverse saturation current density, intrinsic carrier concentration and donor concentration in the carbon side of the device for different P content in the target material for carbon. The estimated device parameters are seen to improve with the increase in P content in the target for up to 5% of P. But for 7% of P in the target, the device performance deteriorates. Using these device parameters, capacitance-voltage (C-V) characteristics of the device is simulated. The results are then compared with the experimentally obtained C-V characteristics. The detailed analyses suggests diffusion of P atoms from the film into the Si region during the film deposition by pulsed laser ablation and thus the formation of a P-I-N device rather than a simple P-N junction device. The width of the I region and diffusion co-efficient of P into the Si are estimated and the values are found to be in the acceptable range.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"9 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116818172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Identification and rapid screen based on immune sensor 基于免疫传感器的识别与快速筛选

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609715

Ching-Jui Shih, Nai-Hao Kuo, Hung-Hsin Tsai, Wei-Chih Lin, C. Lieu

引用次数: 1

HfO2Nano-thin Films Grown by Laser MBE for Gate Dielectric Application 激光MBE生长用于栅极介质的hfo2纳米薄膜

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609728

Y.K. Lu, W. Zhu, Y. Zhang, H. Lu, R. Gopalkrishnan

引用次数: 3