2006 IEEE Conference on Emerging Technologies - Nanoelectronics最新文献_第5页

Parameter Investigation of Nano-Sized Etching in an ICP Silicon Etching System ICP硅刻蚀系统中纳米刻蚀参数研究

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609773

S.C. Chen, C. Kuo, Y. Lin, J.C. Wu, L. Horng

引用次数: 0

Carbon Nanotubes and Si Nanowires as an Alternative Route to Future Nanoelectronics 碳纳米管和硅纳米线是未来纳米电子学的替代途径

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609697

V. Nosik

{"title":"Carbon Nanotubes and Si Nanowires as an Alternative Route to Future Nanoelectronics","authors":"V. Nosik","doi":"10.1109/NANOEL.2006.1609697","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609697","url":null,"abstract":"Nowadays millions of elementary silicon transistors aggregated into microchips could be considered as a symbol of 20thcentury microelectronic technology which has become a spinal bone of postindustrial society propelling other areas of human life. Silicon technology has reached so high level of sophistication that the further evolutionary shrinking of the size of integrated circuits (IC) looks impossible giving way to the revolutionary ideas and new materials. There are obvious limiting factors which earlier have been considered as inevitable sequences of silicon choice: decrease of speed due to the low electron/channel mobility and great interconnect resistance; increase of power consumption due to the leakage currents, various tunneling effects in dense IC; sufficient rise of the manufacturing and IC design cost, rigid requirements on defects. Nevertheless “there is still enough space at the bottom” for new materials which could compete with silicon. Next decades IC industry should step into the post-Roadmap era when the long term anticipation of device parameters could be very difficult if possible at all. Presentation is devoted to the applications such new materials as Carbon NanoTubes (CNT) and silicon nanowires (SiNW) in modern micro and nano electronics. General aspects of hybrid silicon – carbon technologies and possible roadmaps will be considered and illustrated by the results obtained in new CNT center of STMicroelectronics recently established in Singapore.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129900125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Development of BEEM Modeling for the Characterization of Si/Ge Self-Assembled Quantum Dot Heterostructures 硅/锗自组装量子点异质结构BEEM模型的研究进展

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609735

S. D. Hutagalung, K. A. Yaacob, S. Sakrani, A. R. Mat Isa

{"title":"The Development of BEEM Modeling for the Characterization of Si/Ge Self-Assembled Quantum Dot Heterostructures","authors":"S. D. Hutagalung, K. A. Yaacob, S. Sakrani, A. R. Mat Isa","doi":"10.1109/NANOEL.2006.1609735","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609735","url":null,"abstract":"In this paper we present a ballistic electron emission microscopy (BEEM) modeling for the Si/Ge quantum dots characterization. BEEM is a new characterization technique by using electrons ejected from the scanning tunneling microscopy (STM) tip to investigate the metal-semiconductor interfaces. Because of the high resolution of the STM system, BEEM is promising in the characterization of quantum dots as the charge transport on individual dot can be characterized compared to the multitude of dots necessitated in other techniques. This method requires three terminals: a connection to the STM tip to inject electrons, a connection to the sample to collect electrons that traverse the interface, and a third grounding terminal. The energy and angular distribution of the injected electrons can be controlled by varying the tip potential. By using the characteristic data of the injected and collected electrons, many useful transport-related properties of the sample can be obtained. The silicon quantum dots (Si QDs) may be fabricated by taking advantage of the Stranski-Krastanov growth model. Germanium layer has been choosed as a barrier layer due to the large lattice mismatch between Si and Ge. The n-type Si","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128969795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Reverse Hall-Petch Relationship of Metals in Nanometer Size 纳米尺寸金属的反向Hall-Petch关系

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609774

M. Zhao, Q. Jiang

引用次数: 10

From nanostructured thin films to photonic devices --development and commercialization 从纳米结构薄膜到光子器件——发展与商业化

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609685

Z. Sun, T. Chen, Z.J. Zhang, L.L. Wang, S. Ni, Z. Cao, Y.W. Chen, P. Guo, Y. Sun, B. Tay

引用次数: 0

Dynamic Analysis for a MEMS/NEMS Based Device 基于MEMS/NEMS的器件动态分析

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609691

N. Joshi, W. Springer

引用次数: 0

Energy Principle of Atomic and Molecular Systems 原子和分子系统的能量原理

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609733

J. Hsu

引用次数: 0

Size Effect on Phase Transition 相变的尺寸效应

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609681

Q. Jiang, C.C. Yang

引用次数: 0

Friction between Carbon Nanotube and Graphite using Molecular Dynamics 碳纳米管与石墨摩擦的分子动力学研究

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609705

Minghao Cheng, Yilong Lu

引用次数: 4

Ion-beam modification of high-temperature superconductor thin films for the fabrication of superconductive nanodevices 离子束改性高温超导体薄膜制备超导纳米器件

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609693

W. Lang, M. Marksteiner, M. Dineva, T. Enzenhofer, K. Siraj, M. Peruzzi, J. Pedarnig, D. Bauerle, R. Korntner, E. Cekan, E. Platzgummer, H. Loeschner

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引用次数: 0