多孔硅上碳纳米管的生长与表征

Zhiwei Zhao, L. Pan, B. Tay, Changqing Sun
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引用次数: 0

摘要

采用乙炔在823、873和973 K下催化热解的方法,在多孔硅(PS)衬底上合成了碳纳米管(CNTs)。利用扫描电子显微镜、拉曼光谱、x射线光电子能谱和场发射测量分别表征了CNTs的结构、组成和电子发射性能。结果表明,随着生长温度的升高,碳纳米管的直径增大,拉曼光谱中D峰和G峰的强度增大;碳含量随温度升高而升高,氧和硅的浓度则随温度升高而降低。在不同温度下生长的CNTs的场发射性能随电场的增大呈指数增长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth and Characterization of Carbon Nanotubes on Porous Silicon
Carbon nanotubes (CNTs) have been synthesized on porous silicon (PS) substrates by catalytic pyrolysis of acetylene at 823, 873 and 973 K, respectively. Scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and Field emission measurements have been used to characterize the structures, compositions and electron emission properties of the CNTs, respectively. The results reveal that the diameters of CNTs increase with the growth temperatures as well as the intensities of D and G peaks in Raman spectra. Besides, the carbon content increases as increasing the temperature, whereas the concentrations of oxygen and silicon decrease. Field emission properties for CNTs grown at various temperatures follow exponential increase with the increase of electric field.
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