{"title":"高- 954堆叠门闪存的编程效率电介质","authors":"Y. Chen, C. Chien, K. Kin, J. Lou","doi":"10.1109/NANOEL.2006.1609734","DOIUrl":null,"url":null,"abstract":"The programming efficiency of high-permittivity (κ) inter-poly dielectrics (IPDs) and tunnel dielectrics (TDs) on the stacked-gate flash memory performance is evaluated. By 2D MEDICI simulation, stacked-gate flash memories with high-κ IPDs clearly exhibited significant improvement in operation speed over those with conventional oxide/nitride/oxide IPD programmed with either channel Fowler-Nordheim (CFN) or channel hot electron (CHE) injection. Choosing HfO2as the IPD and using CFN programming scheme, the operating voltage can be reduced by more than 48% under a typical 10μs programming time. However, the effect of high-κ TDs was quite different when compared with high-κ IPDs. High-κ TDs were only beneficial for memories programmed with CHE injection instead of CFN tunneling. The operating voltage can be reduced by more than 27% under 10μs programming time by choosing HfO2as both the IPD and TD with CHE programming scheme. Due to the contrary improvement in programming schemes, high-κ IPDs and TDs were suitable for next-generation NAND- and NOR-type stacked-gate flash memories, respectively.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Programming Efficiency of Stacked-Gate Flash Memories with High-κ Dielectrics\",\"authors\":\"Y. Chen, C. Chien, K. Kin, J. Lou\",\"doi\":\"10.1109/NANOEL.2006.1609734\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The programming efficiency of high-permittivity (κ) inter-poly dielectrics (IPDs) and tunnel dielectrics (TDs) on the stacked-gate flash memory performance is evaluated. By 2D MEDICI simulation, stacked-gate flash memories with high-κ IPDs clearly exhibited significant improvement in operation speed over those with conventional oxide/nitride/oxide IPD programmed with either channel Fowler-Nordheim (CFN) or channel hot electron (CHE) injection. Choosing HfO2as the IPD and using CFN programming scheme, the operating voltage can be reduced by more than 48% under a typical 10μs programming time. However, the effect of high-κ TDs was quite different when compared with high-κ IPDs. High-κ TDs were only beneficial for memories programmed with CHE injection instead of CFN tunneling. The operating voltage can be reduced by more than 27% under 10μs programming time by choosing HfO2as both the IPD and TD with CHE programming scheme. Due to the contrary improvement in programming schemes, high-κ IPDs and TDs were suitable for next-generation NAND- and NOR-type stacked-gate flash memories, respectively.\",\"PeriodicalId\":220722,\"journal\":{\"name\":\"2006 IEEE Conference on Emerging Technologies - Nanoelectronics\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Conference on Emerging Technologies - Nanoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANOEL.2006.1609734\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANOEL.2006.1609734","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Programming Efficiency of Stacked-Gate Flash Memories with High-κ Dielectrics
The programming efficiency of high-permittivity (κ) inter-poly dielectrics (IPDs) and tunnel dielectrics (TDs) on the stacked-gate flash memory performance is evaluated. By 2D MEDICI simulation, stacked-gate flash memories with high-κ IPDs clearly exhibited significant improvement in operation speed over those with conventional oxide/nitride/oxide IPD programmed with either channel Fowler-Nordheim (CFN) or channel hot electron (CHE) injection. Choosing HfO2as the IPD and using CFN programming scheme, the operating voltage can be reduced by more than 48% under a typical 10μs programming time. However, the effect of high-κ TDs was quite different when compared with high-κ IPDs. High-κ TDs were only beneficial for memories programmed with CHE injection instead of CFN tunneling. The operating voltage can be reduced by more than 27% under 10μs programming time by choosing HfO2as both the IPD and TD with CHE programming scheme. Due to the contrary improvement in programming schemes, high-κ IPDs and TDs were suitable for next-generation NAND- and NOR-type stacked-gate flash memories, respectively.
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