2006 IEEE Conference on Emerging Technologies - Nanoelectronics最新文献_第3页

Piezoresistivity (with uniaxial strain) in nanocrystalline films of rare-earth manganites 稀土锰纳米晶膜的压阻性(单轴应变)

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609751

J. Sarkar, A. Raychaudhuri

引用次数: 0

Microwave Properties of Fe-based Nanocrystalline Alloy Particles 铁基纳米晶合金颗粒的微波特性

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609702

P. Zhou, L. Deng, J.L. Xie, Y.Q. Liu

引用次数: 1

Size Dependent Surface Energy and Surface Tension 尺寸相关的表面能和表面张力

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609683

H.M. Lu, Q. Jiang

引用次数: 2

New Nanometric Opportunities with High Mobility Semiconductors such as InAs 高迁移率半导体(如InAs)的纳米技术新机遇

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609686

H. Hartnagel

{"title":"New Nanometric Opportunities with High Mobility Semiconductors such as InAs","authors":"H. Hartnagel","doi":"10.1109/NANOEL.2006.1609686","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609686","url":null,"abstract":"One-dimensioned electron gas (1DEG) structures can be fabricated from suitable hetero-structure sandwiches by using nano-technology Schottky- or MOS lithography. We have grown by MBE InAs sandwiched nearly lattice matched between AlSb and GaSb layers and obtained for InAs thicknesses of around 15 nm a room temperature mobility of up to 32000cm2/Vs, provided that the heterojunction was of InSb type. At 77K the electron gas has a mobility of up to 225000 cm2/Vs. Si-Nanowires are found to have an interesting band structure, which is different from Si bulk material. The InAs 1DEG exhibits a quantum-physical behaviour at low temperatures of a reasonable well defined quantized staircase conductance of a ballistic electron wave with increasing applied voltage. InAs is a material where such behaviour is expected to occur at not too low temperature. If two such 1DEG structures of slightly different geometry in parallel are applied with a triangular voltage, the difference potential between each of these two 1DEG’s is a pulse sequence. The number of pulses obtained then depends on the amplitude of the triangular voltage. This can be considered as a basic unit for an Analogue-Digital Converter. These concepts were initially outlined by us at one of the European workshops, intended for discussion of new ideas. Such nano-conductance lines and zero-DEG quantum dot electronic structures can be interconnected in such a manner that various types of signal processing can be achieved.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132740623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nanostructuring surfaces with slow multiply-charged ions 纳米结构表面与缓慢的多重电荷离子

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609739

I. Gebeshuber, R. Smith, S. Pleschko, C. Grünberger, K. Kaska, M. Fuersatz, H. Winter, F. Aumayr

{"title":"Nanostructuring surfaces with slow multiply-charged ions","authors":"I. Gebeshuber, R. Smith, S. Pleschko, C. Grünberger, K. Kaska, M. Fuersatz, H. Winter, F. Aumayr","doi":"10.1109/NANOEL.2006.1609739","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609739","url":null,"abstract":"With the shrinking of semiconductor devices surface features and structuring become increasingly important. Generally, fast ions are used for modification of surfaces via ion beam writing. Their kinetic energy is not only dissipated close to the surface but also in deeper layers of the material. Associated radiation damage could become a problem in the production of novel 3D micro- and nanoelectromechanical systems (MEMS and NEMS). Slow (< 1keV) multiply-charged ions as opposed to fast ions are a new tool for gentler structuring of surfaces at the nanometer-scale. The substrate is modified only at and slightly below the surface, opening the possibility of controlling electronic properties at the nanometer scale, vertically and horizontally. Materials under investigation are highly orientated pyrolytic graphite, single crystal insulators (quartz, mica, aluminum oxide), hydrogen-terminated single-crystal silicon, AsSe- and Se-glass and mylar foils. The materials modified by the ion irradiation are investigated with scanning probe microscopy (AFM, STM) in ultrahigh vacuum and in ambient conditions.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114190372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Patterning of Functional Materials by Pulsed Laser Deposition through Nanostencils 脉冲激光沉积纳米模板功能材料的图案化研究

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609730

C. Cojocaru, C. Harnagea, A. Pignolet, F. Rosei

{"title":"Patterning of Functional Materials by Pulsed Laser Deposition through Nanostencils","authors":"C. Cojocaru, C. Harnagea, A. Pignolet, F. Rosei","doi":"10.1109/NANOEL.2006.1609730","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609730","url":null,"abstract":"We present how various features drawn in a miniature shadow-mask (nanostencil) can be efficiently transferred to a surface in the form of 3D nanostructures of metals (Pt, Cr), semiconductors (Ge) or complex oxides (e.g. BaTiO3) by room temperature pulsed laser deposition (PLD) and stenciling. Using the proposed method, there is no aggressive interaction with the substrate, but selective deposition of the material by simply interposing a sieve with apertures down to 100 nm between the deposition source and the substrate. Nanostenciling allows organizing the structures in given architectures, with high accuracy, while reducing drastically the number of processes present in resist-based lithography. The material deposited through the stencil mask conserves the desired functionality even at the level of the individual nanostructures. The patterning process is simple and rapid since it is not implying additional processing steps to the deposition process; it is also parallel, resist-less and without interfering with the structures natural growth dynamics. Nanostenciling can be performed in high or ultra high vacuum and is suitable for parallel prototyping of fragile or functionalized surfaces.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116129029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ferroelectric copolymer P(VDF-TrFE) as gate dielectric in organic field effect transistors for memory application devices 铁电共聚物P(VDF-TrFE)作为存储器应用器件中有机场效应晶体管的栅极介质

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609707

A. Nguyen, P. Lee

引用次数: 3

Sintering of Nano-sized Zirconia Powder Processed by Powder Injection Moulding 粉末注射成型纳米氧化锆粉体的烧结研究

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609700

P. C. Yu, Q.F. Li, J. Fuh

引用次数: 3

Dynamic Study of Planar Focusing for a Microfluidic Cell Sorter 微流控电池分选机平面聚焦的动力学研究

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609743

Z. G. Wu, H. N. Cheang, D. Ghista, A. Liu

引用次数: 0

Effect of Super Saturation Level on the size and morphology of Hydroxyapatite precipitate 超饱和度对羟基磷灰石沉淀大小和形态的影响

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609744

K. Prakash, C. Ooi, R. Kumar, K. Khor, P. Cheang

引用次数: 11