Ferroelectric copolymer P(VDF-TrFE) as gate dielectric in organic field effect transistors for memory application devices

Abstract

Fabrication of ferroelectric memory field effect transistor (FEMFET) is presented with copolymer P(VDF-TrFE) as gate dielectric. Spin-coated copolymer film has semi-crystalline structure after annealing, in which the crystallites contains ferroelectric and paraelectric phase. Dipolar alignment in ferroelectric phase is controlled with the sweeping of transistor gate bias. Ferroelectric remanent polarization enables current retention in the transistor during OFF state that can be used in non-volatile memory application.