2006 IEEE Conference on Emerging Technologies - Nanoelectronics最新文献_第2页

Electrical Characteristics of CNT-FETs with Symmetric Field-Effect-Free-on Source and Drain 非对称场效应源极和漏极碳纳米管场效应管的电特性

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609756

W. Lee, C. Lai, C. Weng, Z. Juang, K. Leou, K. Chang-Liao, C. Tsai

{"title":"Electrical Characteristics of CNT-FETs with Symmetric Field-Effect-Free-on Source and Drain","authors":"W. Lee, C. Lai, C. Weng, Z. Juang, K. Leou, K. Chang-Liao, C. Tsai","doi":"10.1109/NANOEL.2006.1609756","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609756","url":null,"abstract":"The carbon-nanotube field-effect-transistors (CNTFETs) have been explored and proposed to be the promising candidates for the next generation integrated-circuit (IC) devices. The so-called Schottky barrier (SB)-FET is widely used to characterize the operation behavior of a CNTFET, and the Schottky barriers are affected by the gate fields at the metal-nanotube interfaces. By using the double-layered catalyst configuration (nickel and upper SiO2layer), SWNTs were in-situ grown across two catalytic pads on a substrate with a thinner thermal oxide layer above the channel and thicker ones at the two source/drain junction terminals. The uni-polar characteristics of a p-type CNTFET was consequently achieved by electrostatic engineering. The turn-off current (Ioff) was significantly reduced and the turn-on current (Ion) to Ioffratio was then increased up to ∼ 104. The p to n conversion was observed after several cycles of measurement in a vacuum environment presumably due to removal of adsorbed O2molecules. On the other hand, the hysteresis behavior of transfer characteristics was still observed, suggesting that the CNTFET could be used in non-volatile memory applications.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132750343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Organic Thin-Film Transistors Based On Conjugated Polymer and Carbon Nanotube Composites 基于共轭聚合物和碳纳米管复合材料的有机薄膜晶体管

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609745

Y. Gan, Chang Ming Li

引用次数: 1

Monte Carlo simulations of strained Si/SiGe-OI nMOSFETs 应变Si/SiGe-OI nmosfet的蒙特卡罗模拟

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609766

A. Yangthaisong, T. Osotchan

{"title":"Monte Carlo simulations of strained Si/SiGe-OI nMOSFETs","authors":"A. Yangthaisong, T. Osotchan","doi":"10.1109/NANOEL.2006.1609766","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609766","url":null,"abstract":"The motivation for research into n-type strained-Si/SiGe-on-insulator metal-oxide field effect transistors (SiGe-OI MOSFETs) is to take advantage of both the enhancement of electron transport properties due to strain and the mass production of advanced CMOS technology. Two dimensional self-consistent ensemble Monte Carlo simulation has been used to provide a description of the steady and transient charge transport in a strained-Si/SiGe-OI nMOSFET with 55 nm gate length. The simulated device is similar to that investigate experimentally by the IBM group. The simulation provides information on the microscopic details of the carrier behavior, including carrier velocity, kinetic energy, and carrier density, as a function of position in the device. Detailed time-dependent voltage signal analysis has been carried out to test the device response and derive the frequency bandwidth, which has been compared with the result of an identical analysis performed on a conventional planar geometry silicon-on-insulator (SOI) n-MOSFET of similar dimensions and doping. A sinc voltage pulse is applied to the gate and the resulting drain current and gate currents used to calculate the current gain as a function of frequency. Figure 5 shows that the current gain of Si/SGOI MOSFET could have an intrinsic cut-off frequency approaching 200 ± 10 GHz, a 50 % improvement over the unstrained device.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117235597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Electron Conductance of Thiophene Dimers with Different Torsional Angles 不同扭角噻吩二聚体的电子电导率

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609706

P. Bai, E. Li, P. Collier, W. Chin, K. Loh

{"title":"Electron Conductance of Thiophene Dimers with Different Torsional Angles","authors":"P. Bai, E. Li, P. Collier, W. Chin, K. Loh","doi":"10.1109/NANOEL.2006.1609706","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609706","url":null,"abstract":"We study the electron conductance of thiophene dimers though metal-molecule-metal systems using the first principles method, which is based on the density functional theory (DFT) with norm conserving nonlocal pseudopotentials and nonequilibrium Green's function (NEGF) to calculate the charge distribution for open metal-molecule-metal systems. The structure and chemical properties of different thiophene dimers are investigated by changing the inter-ring torsional angles. Three thiophene dimers with typical properties are selected for the further study of their electronic properties. The three selected thiophene dimers together with gold electrodes and the terminal group sulpher are used to construct 3-D atomic metal-molecule-metal open systems, which are used to investigate the electron transport of the thiophene dimers. The current-voltage (I-V) characteristics, density of states (DOS), and the transmission function (TF) of constructed systems are investigated. Results show that the thiophene dimers in planar structures have smaller energy gaps, better electron transmission function, hence better electronic conductance than the thiophene dimers in twist structures does. The thiophene dimer with a perpendicular inter-ring structure has the poorest electron conductance. This implies that the thiophene oligomers can be used as wires, as well as switches by control the inter-ring torsional angles.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126139923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Characterization of Thin Oxide using FIB-SIMS and FIB-TEM Techniques 利用FIB-SIMS和FIB-TEM技术表征薄氧化物

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609713

O. Ngan, D. Mcphail, R. Chater, B. Shollock

{"title":"Characterization of Thin Oxide using FIB-SIMS and FIB-TEM Techniques","authors":"O. Ngan, D. Mcphail, R. Chater, B. Shollock","doi":"10.1109/NANOEL.2006.1609713","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609713","url":null,"abstract":"The use of SIMS for the characterization and study of biomaterial surfaces is fast gaining popularity in the development of bio-functional and bioactive tissue compatible interfaces. The presence of TiO2oxide in metallic Ti implants and its ability to promote bioactivity is still unclear. FIB-SIMS (Focused Ion Beam-Secondary Ion Mass Spectrometry) and FIB-TEM (FIB-Transmission Electron Microscopy) techniques represent powerful tools for characterizing the oxide layer. This paper investigates the oxygen transport mechanism of thermal barrier coating systems applied on nickel-base superalloy turbine blades. In this study, a two-stage oxidation experiment is used.18O2is used as a tracer during the second stage oxidation on previously oxidized Ni-base superalloys with a layer of bond coat material. The aluminium oxide grown in16O2during the first stage oxidation serves as a background oxide. Mass spectra collected by FIB-SIMS reveal the counter mass transportation by inward diffusion of oxygen and outward diffusion of aluminium. New oxide formation during the second stage oxidation under an18O2enriched environment is observed at both the gas/oxide interface as well as oxide/superalloy interface. Transmission Electron Microscopy (TEM) can be used to identify the very fine phases developed in both the inter-diffusion zone as well as the thermally grown oxide layer. The use of Focused Ion Beam (FIB) technique allows for selective nano-machining of areas of interest for the production of TEM samples. FIB-SIMS and TEM are carried out to determine the specific phase transformations occurring in the TBC system.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127573614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

The one phonon Raman spectrum of silicon nanostructures 硅纳米结构的单声子拉曼光谱

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609770

P. Alfaro, M. Cruz, Chumin Wang

引用次数: 0

Novel approach to low substrate temperature synthesis of carbon nanotubes 低温合成碳纳米管的新方法

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609724

G.Y. Chen, C. Poa, V. Stolojan, S. Silva

引用次数: 0

Nanopore Devices for Single Molecule Sensing 用于单分子传感的纳米孔器件

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609714

Qiao Wang, Peng Chen

引用次数: 0

Education and Training Approach for the Future Nanotechnology Workforce 未来纳米技术劳动力的教育和培训方法

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609719

S. Fonash, D. Fenwick, P. Hallacher, T. Kuzma, W. Nam

引用次数: 12

Nanostructuring surfaces with slow multiply-charged ions 纳米结构表面与缓慢的多重电荷离子

2006 IEEE Conference on Emerging Technologies - Nanoelectronics Pub Date : 2006-03-27 DOI: 10.1109/NANOEL.2006.1609739

I. Gebeshuber, R. Smith, S. Pleschko, C. Grünberger, K. Kaska, M. Fuersatz, H. Winter, F. Aumayr

{"title":"Nanostructuring surfaces with slow multiply-charged ions","authors":"I. Gebeshuber, R. Smith, S. Pleschko, C. Grünberger, K. Kaska, M. Fuersatz, H. Winter, F. Aumayr","doi":"10.1109/NANOEL.2006.1609739","DOIUrl":"https://doi.org/10.1109/NANOEL.2006.1609739","url":null,"abstract":"With the shrinking of semiconductor devices surface features and structuring become increasingly important. Generally, fast ions are used for modification of surfaces via ion beam writing. Their kinetic energy is not only dissipated close to the surface but also in deeper layers of the material. Associated radiation damage could become a problem in the production of novel 3D micro- and nanoelectromechanical systems (MEMS and NEMS). Slow (< 1keV) multiply-charged ions as opposed to fast ions are a new tool for gentler structuring of surfaces at the nanometer-scale. The substrate is modified only at and slightly below the surface, opening the possibility of controlling electronic properties at the nanometer scale, vertically and horizontally. Materials under investigation are highly orientated pyrolytic graphite, single crystal insulators (quartz, mica, aluminum oxide), hydrogen-terminated single-crystal silicon, AsSe- and Se-glass and mylar foils. The materials modified by the ion irradiation are investigated with scanning probe microscopy (AFM, STM) in ultrahigh vacuum and in ambient conditions.","PeriodicalId":220722,"journal":{"name":"2006 IEEE Conference on Emerging Technologies - Nanoelectronics","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114190372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0