低温合成碳纳米管的新方法

G.Y. Chen, C. Poa, V. Stolojan, S. Silva
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引用次数: 0

摘要

我们提出了一种新的方法,它将有可能允许使用直流等离子体增强化学气相沉积的低温衬底合成碳纳米管。该方法利用自上而下的等离子体加热,而不是传统的从电极下的传统基板加热器加热。在这项工作中,一个相对较厚的钛层被用作热障,以在Ni催化剂表面和衬底之间产生温度梯度。我们将生长特性描述为偏置电压和碳氢化合物浓度的函数。生长过程中的加热完全由等离子体提供,它只依赖于工艺条件,这决定了功率密度和基板的冷却,加上现在的“阻挡层”的热性能。这种利用等离子体加热和热障的新方法允许在合适的冷却方案下在低衬底温度条件下合成碳纳米管。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel approach to low substrate temperature synthesis of carbon nanotubes
We present a novel approach, which will potentially allow for low-temperature-substrate synthesis of carbon nanotubes using direct-current plasma-enhanced chemical vapour deposition. The approach utilizes top-down plasma heating rather than conventional heating from a conventional substrate heater under the electrode. In this work, a relatively thick titanium layer is used as a thermal barrier to create a temperature gradient between the Ni catalyst surface and the substrate. We describe the growth properties as a function of the bias voltage and the hydrocarbon concentrations. The heating during growth is provided solely by the plasma, which is dependent only on the process conditions, which dictate the power density and the cooling of the substrate, plus now the thermal properties of the “barrier layer”. This novel approach of using plasma heating and thermal barrier allows for the synthesis of carbon nanotubes at low substrate temperature conditions to be attained with suitable cooling schemes.
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