不同扭角噻吩二聚体的电子电导率

P. Bai, E. Li, P. Collier, W. Chin, K. Loh
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引用次数: 1

摘要

本文采用第一性原理方法研究了金属-分子-金属体系中噻吩二聚体的电子电导率,该方法基于守恒范数非局部伪势的密度泛函理论和非平衡格林函数计算了开放金属-分子-金属体系的电荷分布。通过改变环间扭角,研究了不同噻吩二聚体的结构和化学性质。选择了三种具有典型性质的噻吩二聚体,对其电子性质进行了进一步的研究。将所选的三种噻吩二聚体与金电极和末端基团硫一起构建了三维原子金属-分子-金属开放体系,并用于研究噻吩二聚体的电子传递。研究了所构建系统的电流-电压(I-V)特性、态密度(DOS)和传输函数(TF)。结果表明,平面结构的噻吩二聚体比扭曲结构的噻吩二聚体具有更小的能隙,更好的电子传递功能,从而具有更好的电子电导。具有垂直环间结构的噻吩二聚体具有最差的电子导电性。这意味着噻吩低聚物可以用作导线,也可以通过控制环间扭角来用作开关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electron Conductance of Thiophene Dimers with Different Torsional Angles
We study the electron conductance of thiophene dimers though metal-molecule-metal systems using the first principles method, which is based on the density functional theory (DFT) with norm conserving nonlocal pseudopotentials and nonequilibrium Green's function (NEGF) to calculate the charge distribution for open metal-molecule-metal systems. The structure and chemical properties of different thiophene dimers are investigated by changing the inter-ring torsional angles. Three thiophene dimers with typical properties are selected for the further study of their electronic properties. The three selected thiophene dimers together with gold electrodes and the terminal group sulpher are used to construct 3-D atomic metal-molecule-metal open systems, which are used to investigate the electron transport of the thiophene dimers. The current-voltage (I-V) characteristics, density of states (DOS), and the transmission function (TF) of constructed systems are investigated. Results show that the thiophene dimers in planar structures have smaller energy gaps, better electron transmission function, hence better electronic conductance than the thiophene dimers in twist structures does. The thiophene dimer with a perpendicular inter-ring structure has the poorest electron conductance. This implies that the thiophene oligomers can be used as wires, as well as switches by control the inter-ring torsional angles.
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