1996 26th European Microwave Conference最新文献

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Characterization of leaky wave antenna and active gain enhancement 漏波天线特性与有源增益增强
1996 26th European Microwave Conference Pub Date : 1996-10-01 DOI: 10.1109/EUMA.1996.337647
Min Chen, Howard Z. Chang, B. Houshmand, T. Itoh
{"title":"Characterization of leaky wave antenna and active gain enhancement","authors":"Min Chen, Howard Z. Chang, B. Houshmand, T. Itoh","doi":"10.1109/EUMA.1996.337647","DOIUrl":"https://doi.org/10.1109/EUMA.1996.337647","url":null,"abstract":"The leaky wave antenna has been characterized using the 3-D FDTD method, and its employment of the active gain enhancement scheme has been experimentally investigated. The structure analyzed in the FDTD analysis is a rectangular dielectric rod periodically loaded with metal strips, and launching effects are included into the analysis. In the active gain enhancement experiment, the antenna is made of a periodically loaded microstrip line with active gain elements placed to compensate for radiation as well as waveguide loss. This novel antenna possesses a larger effective aperture, higher gain, and narrower beam width as compared to a passive antenna with similar dimensions. Results of the FDTD analysis and active gain enhancement investigation are confirmed by experiments.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122429739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Influence of alloy composition on the noise behavior of hetero-FETs in millimeter-wave frequency range 合金成分对毫米波频段异质场效应管噪声特性的影响
1996 26th European Microwave Conference Pub Date : 1996-10-01 DOI: 10.1109/EUMA.1996.337720
A. Abou-Elnour, K. Schunemann
{"title":"Influence of alloy composition on the noise behavior of hetero-FETs in millimeter-wave frequency range","authors":"A. Abou-Elnour, K. Schunemann","doi":"10.1109/EUMA.1996.337720","DOIUrl":"https://doi.org/10.1109/EUMA.1996.337720","url":null,"abstract":"The noise behavior of millimeter-wave Hetero-FETs is investigated by using a rigorous physical simulator which takes into account non-stationary transport properties and quantization effects to allow better understanding of the origins of the noise fluctuations. The model is applied to determine the effects of Al composition on the 2DEG transport properties and consequently on the noise behavior of Hetero-FETs. The results are compared to those for GaAs MESFETs with 3DEG channel and possibilities to suppress the dominant noise sources at the different frequencies of operation are finally discussed.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116531660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A monolithic integrated, on chip matched GaAs power amplifier for HIPERPLAN with a single 3.3v supply 单片集成,片上匹配的GaAs功率放大器HIPERPLAN与单3.3v电源
1996 26th European Microwave Conference Pub Date : 1996-10-01 DOI: 10.1109/EUMA.1996.337550
T. A. Bos, U. Lott
{"title":"A monolithic integrated, on chip matched GaAs power amplifier for HIPERPLAN with a single 3.3v supply","authors":"T. A. Bos, U. Lott","doi":"10.1109/EUMA.1996.337550","DOIUrl":"https://doi.org/10.1109/EUMA.1996.337550","url":null,"abstract":"For HIPERLAN a three stage monolithic integrated power amplifier was designed and realized with a single 3.3 V supply. In the frequency range of 5.15 to 5.3 GHz the MESFET amplifier delivers a saturated output power of 21.8 dBm and 19 dB gain at the ldB compression point. Full input and output on chip matching networks are included on a chip size of 1 mm × 2 mm","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"355 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132794118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A new silicon micro-test-fixture facilitates the re-usability of accurately characterized low-power FET devices 一种新的硅微测试夹具有助于精确表征低功率场效应管器件的重复使用
1996 26th European Microwave Conference Pub Date : 1996-10-01 DOI: 10.1109/EUMA.1996.337625
E. Wasige, G. Kompa, F. van Raay, I. Rangelow, F. Shi, W. Scholz, R. Kassing
{"title":"A new silicon micro-test-fixture facilitates the re-usability of accurately characterized low-power FET devices","authors":"E. Wasige, G. Kompa, F. van Raay, I. Rangelow, F. Shi, W. Scholz, R. Kassing","doi":"10.1109/EUMA.1996.337625","DOIUrl":"https://doi.org/10.1109/EUMA.1996.337625","url":null,"abstract":"Accurate characterization and modeling of microwave active devices is a prerequisite for reliable microwave circuit design. A new silicon micro-test-fixture which offers the possibility of (re-)using accurately characterized microwave GaAs FETs in final circuits is presented. In this way, device tolerances are eliminated resulting in accurately predictable microwave performances. The technological requirements that must be fulfilled to facilitate the re-usability of commercially available GaAs FET transistor chips and the required processing procedure are discussed. For device characterization purposes, microtest-fixtures are micromachined on a high resistivity silicon (MRS) wafer which is also suitable as a microwave substrate. After characterization and modeling of the microwave device, the required passive circuitry for the intended application can be realized on the same wafer incorporating the pre-tested device and using distributed coplanar components. The proposed technology minimizes the required lengths of bond wire interconnects between the chip and the passive circuit and offers the possibility of realizing planar interconnects using air-bridge technology.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117308106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Comparative studies of three types of coplanar waveguide structures for millimeter-wave applications 毫米波应用中三种共面波导结构的比较研究
1996 26th European Microwave Conference Pub Date : 1996-10-01 DOI: 10.1109/EUMA.1996.337742
Zhewang Ma, A. Miyata, E. Yamashita
{"title":"Comparative studies of three types of coplanar waveguide structures for millimeter-wave applications","authors":"Zhewang Ma, A. Miyata, E. Yamashita","doi":"10.1109/EUMA.1996.337742","DOIUrl":"https://doi.org/10.1109/EUMA.1996.337742","url":null,"abstract":"Three types of coplanar waveguide (CPW) structures with shielding grooves for suppressing surface wave leakage are characterized by using a full-wave mode-matching analysis. Influence of the geometrical dimensions of the groove on their phase constants, characteristic impedances, and single mode frequency bands are investigated. The results reveal that the inverted microshield CPW is particularly attractive for realizing wide band and low dispersion millimeter wave transmission lines and circuits.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115529241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Distributed approach for modeling integrated MESFET/HFET devices 集成MESFET/HFET器件的分布式建模方法
1996 26th European Microwave Conference Pub Date : 1996-10-01 DOI: 10.1109/EUMA.1996.337635
W. Stiebler, M. Matthes, T. Koppel, G. Bock
{"title":"Distributed approach for modeling integrated MESFET/HFET devices","authors":"W. Stiebler, M. Matthes, T. Koppel, G. Bock","doi":"10.1109/EUMA.1996.337635","DOIUrl":"https://doi.org/10.1109/EUMA.1996.337635","url":null,"abstract":"To model the distributed nature of an integrated MESFET/ HFET device for MMIC applications we introduce lossless transmission lines for the feeding structure, capacitive transmission lines for the \"Cold-FET\" and a new element for the frequency dependence of the gate-resistance due to the skin effect.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121885676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microwave applications of high-temperature superconductor devices 高温超导体器件的微波应用
1996 26th European Microwave Conference Pub Date : 1996-10-01 DOI: 10.1109/EUMA.1996.337704
Yoshio Kobayashi
{"title":"Microwave applications of high-temperature superconductor devices","authors":"Yoshio Kobayashi","doi":"10.1109/EUMA.1996.337704","DOIUrl":"https://doi.org/10.1109/EUMA.1996.337704","url":null,"abstract":"Three topics are reviewed for microwave application of high-temperature superconductor (HTS) devices; measurement method of surface resistance Rs of high-temperature superconductor films and bulks, phenomenological explanation of Rs by three fluid model, and microwave HTS filters of various types. Microwave applications of high-temperature superconductor devices Yoshio Kobayashi Saitama University, Urawa, Saitama 338, Japan. Summary Three topics are reviewed for microwave application of high-temperature superconductor (HTS) devices; measurement method of surface resistance Rs of high-temperature superconductor films and bulks, phenomenological explanation of Rs by three fluid model, and microwave HTS filters of various types.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121420292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Eigenvalue mode confirmation in a mutually coupled active antenna chain array 互耦合有源天线链阵列的特征值模式确认
1996 26th European Microwave Conference Pub Date : 1996-10-01 DOI: 10.1109/EUMA.1996.337655
D. Humphrey, V. Fusco
{"title":"Eigenvalue mode confirmation in a mutually coupled active antenna chain array","authors":"D. Humphrey, V. Fusco","doi":"10.1109/EUMA.1996.337655","DOIUrl":"https://doi.org/10.1109/EUMA.1996.337655","url":null,"abstract":"Arrays of coupled active antenna oscillators can be used for power-combining at microwave and millimetre-wave frequencies. It is known that the relative phase angle between active antenna oscillators placed in an array and hence their far-field radiation pattern can have certain discrete values depending on the separation distance between elements. Thus in order to characterise an active array an accurate method of evaluating the coupling between oscillators and a knowledge of the available modes that exist within the array are required. In this paper the available modes for an array of mutually coupled active antenna elements are evaluated by examination of the eigenvectors of the impedance matrix of the passive element components in the active array. Time domain numerical simulations are performed and the resulting predictions compared to those obtained by experiment and by the eigenvalue approach.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"265 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122535545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A universal electrothermal FET model suitable for general large-signal applications 适用于一般大信号应用的通用电热场效应管模型
1996 26th European Microwave Conference Pub Date : 1996-10-01 DOI: 10.1109/EUMA.1996.337565
V. Rizzoli, A. Costanzo, Giulio Muzzarelli
{"title":"A universal electrothermal FET model suitable for general large-signal applications","authors":"V. Rizzoli, A. Costanzo, Giulio Muzzarelli","doi":"10.1109/EUMA.1996.337565","DOIUrl":"https://doi.org/10.1109/EUMA.1996.337565","url":null,"abstract":"A new general-purpose nonlinear MESFET model is proposed. The model is fully conservative to ensure physical consistency in large-signal operation, and accounts for low-frequency dispersion, 3-rd order intermodulation, and temperature effects. It is valid for positive, zero, and negative drain-source voltages, and can thus be used in all kinds of nonlinear simulations, including active circuits, resistive mixers, and switches.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129791652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A simple design procedure for microstrip resonator filters with a single pair of transmission zeros 一个简单的设计程序微带谐振滤波器与一个单一的对传输零
1996 26th European Microwave Conference Pub Date : 1996-10-01 DOI: 10.1109/EUMA.1996.337602
S. Denis, C. Person, S. Toutain, B. Theron, S. Vigneron
{"title":"A simple design procedure for microstrip resonator filters with a single pair of transmission zeros","authors":"S. Denis, C. Person, S. Toutain, B. Theron, S. Vigneron","doi":"10.1109/EUMA.1996.337602","DOIUrl":"https://doi.org/10.1109/EUMA.1996.337602","url":null,"abstract":"Current microwave communication systems need high-performance narrow-band bandpass filters of size who is compatible with devices including MIC or MMIC components. These needs are expressed especially in communication satellites where payload dimensions and weights are important criteria. Multiple coupled resonator filters are good candidates in this respect. Thanks to their ability to place transmission zeros near cut-off frequencies, high selectivity with a restricted number of resonators is obtained. This characteristic is of great interest in the case of narrow-band filters where losses are strongly related to the number of resonators. Nevertheless, making these filters with coupled microstrip resonators presents several difficulties due to the technology. In fact, the discontinuities presented in this topology and the velocity phase differences on parallel coupled lines make the synthesis of this kind of filter tedious. With the aim of answering this problem, a complete design procedure is presented in this paper which allows this kind of filter to be designed easily on any commercial microwave circuit simulator software. In order to validate particular elements incorporated in the procedure, a four order X-band filter was designed. This filter is intended to be inserted in a small size satellite transponder.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130117935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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