{"title":"集成MESFET/HFET器件的分布式建模方法","authors":"W. Stiebler, M. Matthes, T. Koppel, G. Bock","doi":"10.1109/EUMA.1996.337635","DOIUrl":null,"url":null,"abstract":"To model the distributed nature of an integrated MESFET/ HFET device for MMIC applications we introduce lossless transmission lines for the feeding structure, capacitive transmission lines for the \"Cold-FET\" and a new element for the frequency dependence of the gate-resistance due to the skin effect.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Distributed approach for modeling integrated MESFET/HFET devices\",\"authors\":\"W. Stiebler, M. Matthes, T. Koppel, G. Bock\",\"doi\":\"10.1109/EUMA.1996.337635\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To model the distributed nature of an integrated MESFET/ HFET device for MMIC applications we introduce lossless transmission lines for the feeding structure, capacitive transmission lines for the \\\"Cold-FET\\\" and a new element for the frequency dependence of the gate-resistance due to the skin effect.\",\"PeriodicalId\":219101,\"journal\":{\"name\":\"1996 26th European Microwave Conference\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 26th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1996.337635\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 26th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1996.337635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Distributed approach for modeling integrated MESFET/HFET devices
To model the distributed nature of an integrated MESFET/ HFET device for MMIC applications we introduce lossless transmission lines for the feeding structure, capacitive transmission lines for the "Cold-FET" and a new element for the frequency dependence of the gate-resistance due to the skin effect.
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