A universal electrothermal FET model suitable for general large-signal applications

Abstract

A new general-purpose nonlinear MESFET model is proposed. The model is fully conservative to ensure physical consistency in large-signal operation, and accounts for low-frequency dispersion, 3-rd order intermodulation, and temperature effects. It is valid for positive, zero, and negative drain-source voltages, and can thus be used in all kinds of nonlinear simulations, including active circuits, resistive mixers, and switches.