单片集成，片上匹配的GaAs功率放大器HIPERPLAN与单3.3v电源

1996 26th European Microwave Conference Pub Date : 1996-10-01 DOI:10.1109/EUMA.1996.337550

T. A. Bos, U. Lott

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引用次数: 4

摘要

针对HIPERLAN，设计并实现了一个单3.3 V电源的三级单片集成功率放大器。在5.15至5.3 GHz的频率范围内，MESFET放大器在ldB压缩点提供21.8 dBm的饱和输出功率和19 dB增益。在芯片尺寸为1mm × 2mm的芯片上包含完整的输入和输出匹配网络

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A monolithic integrated, on chip matched GaAs power amplifier for HIPERPLAN with a single 3.3v supply

For HIPERLAN a three stage monolithic integrated power amplifier was designed and realized with a single 3.3 V supply. In the frequency range of 5.15 to 5.3 GHz the MESFET amplifier delivers a saturated output power of 21.8 dBm and 19 dB gain at the ldB compression point. Full input and output on chip matching networks are included on a chip size of 1 mm × 2 mm

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1996 26th European Microwave Conference

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