{"title":"A monolithic integrated, on chip matched GaAs power amplifier for HIPERPLAN with a single 3.3v supply","authors":"T. A. Bos, U. Lott","doi":"10.1109/EUMA.1996.337550","DOIUrl":null,"url":null,"abstract":"For HIPERLAN a three stage monolithic integrated power amplifier was designed and realized with a single 3.3 V supply. In the frequency range of 5.15 to 5.3 GHz the MESFET amplifier delivers a saturated output power of 21.8 dBm and 19 dB gain at the ldB compression point. Full input and output on chip matching networks are included on a chip size of 1 mm × 2 mm","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"355 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 26th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1996.337550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
For HIPERLAN a three stage monolithic integrated power amplifier was designed and realized with a single 3.3 V supply. In the frequency range of 5.15 to 5.3 GHz the MESFET amplifier delivers a saturated output power of 21.8 dBm and 19 dB gain at the ldB compression point. Full input and output on chip matching networks are included on a chip size of 1 mm × 2 mm