{"title":"合金成分对毫米波频段异质场效应管噪声特性的影响","authors":"A. Abou-Elnour, K. Schunemann","doi":"10.1109/EUMA.1996.337720","DOIUrl":null,"url":null,"abstract":"The noise behavior of millimeter-wave Hetero-FETs is investigated by using a rigorous physical simulator which takes into account non-stationary transport properties and quantization effects to allow better understanding of the origins of the noise fluctuations. The model is applied to determine the effects of Al composition on the 2DEG transport properties and consequently on the noise behavior of Hetero-FETs. The results are compared to those for GaAs MESFETs with 3DEG channel and possibilities to suppress the dominant noise sources at the different frequencies of operation are finally discussed.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of alloy composition on the noise behavior of hetero-FETs in millimeter-wave frequency range\",\"authors\":\"A. Abou-Elnour, K. Schunemann\",\"doi\":\"10.1109/EUMA.1996.337720\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The noise behavior of millimeter-wave Hetero-FETs is investigated by using a rigorous physical simulator which takes into account non-stationary transport properties and quantization effects to allow better understanding of the origins of the noise fluctuations. The model is applied to determine the effects of Al composition on the 2DEG transport properties and consequently on the noise behavior of Hetero-FETs. The results are compared to those for GaAs MESFETs with 3DEG channel and possibilities to suppress the dominant noise sources at the different frequencies of operation are finally discussed.\",\"PeriodicalId\":219101,\"journal\":{\"name\":\"1996 26th European Microwave Conference\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 26th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1996.337720\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 26th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1996.337720","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of alloy composition on the noise behavior of hetero-FETs in millimeter-wave frequency range
The noise behavior of millimeter-wave Hetero-FETs is investigated by using a rigorous physical simulator which takes into account non-stationary transport properties and quantization effects to allow better understanding of the origins of the noise fluctuations. The model is applied to determine the effects of Al composition on the 2DEG transport properties and consequently on the noise behavior of Hetero-FETs. The results are compared to those for GaAs MESFETs with 3DEG channel and possibilities to suppress the dominant noise sources at the different frequencies of operation are finally discussed.
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