适用于一般大信号应用的通用电热场效应管模型

V. Rizzoli, A. Costanzo, Giulio Muzzarelli
{"title":"适用于一般大信号应用的通用电热场效应管模型","authors":"V. Rizzoli, A. Costanzo, Giulio Muzzarelli","doi":"10.1109/EUMA.1996.337565","DOIUrl":null,"url":null,"abstract":"A new general-purpose nonlinear MESFET model is proposed. The model is fully conservative to ensure physical consistency in large-signal operation, and accounts for low-frequency dispersion, 3-rd order intermodulation, and temperature effects. It is valid for positive, zero, and negative drain-source voltages, and can thus be used in all kinds of nonlinear simulations, including active circuits, resistive mixers, and switches.","PeriodicalId":219101,"journal":{"name":"1996 26th European Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A universal electrothermal FET model suitable for general large-signal applications\",\"authors\":\"V. Rizzoli, A. Costanzo, Giulio Muzzarelli\",\"doi\":\"10.1109/EUMA.1996.337565\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new general-purpose nonlinear MESFET model is proposed. The model is fully conservative to ensure physical consistency in large-signal operation, and accounts for low-frequency dispersion, 3-rd order intermodulation, and temperature effects. It is valid for positive, zero, and negative drain-source voltages, and can thus be used in all kinds of nonlinear simulations, including active circuits, resistive mixers, and switches.\",\"PeriodicalId\":219101,\"journal\":{\"name\":\"1996 26th European Microwave Conference\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 26th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1996.337565\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 26th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1996.337565","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

提出了一种新的通用非线性MESFET模型。该模型是完全保守的,以保证大信号运行时的物理一致性,并考虑了低频色散、三阶互调和温度效应。它适用于正、零和负漏源电压,因此可以用于各种非线性仿真,包括有源电路、阻性混频器和开关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A universal electrothermal FET model suitable for general large-signal applications
A new general-purpose nonlinear MESFET model is proposed. The model is fully conservative to ensure physical consistency in large-signal operation, and accounts for low-frequency dispersion, 3-rd order intermodulation, and temperature effects. It is valid for positive, zero, and negative drain-source voltages, and can thus be used in all kinds of nonlinear simulations, including active circuits, resistive mixers, and switches.
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