1977 International Electron Devices Meeting最新文献_第3页

Junction termination extension (JTE), A new technique for increasing avalanche breakdown voltage and controlling surface electric fields in P-N junctions 结端延伸(JTE)，一种提高雪崩击穿电压和控制pn结表面电场的新技术

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189277

V. Temple

{"title":"Junction termination extension (JTE), A new technique for increasing avalanche breakdown voltage and controlling surface electric fields in P-N junctions","authors":"V. Temple","doi":"10.1109/IEDM.1977.189277","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189277","url":null,"abstract":"Extremely high breakdown voltages with very low leakage current have been achieved in plane and planar p-n junctions using an ion implanted junction extension for precise control of the depletion region charge in the junction termination. Theory is presented which shows a greatly improved control of both the peak surface and bulk electric fields in reverse biased p-n junctions. Experimental results show breakdown voltages better than 95% of the ideal and at lower leakage current than the corresponding unimplanted devices. For example, diodes with a normal breakdown voltage of 1050 volts with a .5ma leakage current become 1400 volt (1450 ideal) devices with a 5µa leakage current. Applications of the technique are feasible in MOS technology, as would be expected, but are even more attractive in power devices in which the dramatically reduced surface fields are just as important as the extremely high breakdown voltages since it means more flexibility in passivation techniques, two of which we have used to date. Our results have also shown that the implant can be at a variety of temperatures with a good degree of success, extra process flexibility being the goal of these tests.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133177999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 63

Electrophysical properties of the germanium MIS-transistor 锗miss晶体管的电物理特性

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189334

K. Z. Don, I. Neizvestny, V. N. Ovsyuk

{"title":"Electrophysical properties of the germanium MIS-transistor","authors":"K. Z. Don, I. Neizvestny, V. N. Ovsyuk","doi":"10.1109/IEDM.1977.189334","DOIUrl":"https://doi.org/10.1109/IEDM.1977.189334","url":null,"abstract":"The characteristics and interface properties of n-channel and p-channel Ge-IGFET's are investigated. Transistors were fabricated using Ge-SiO<inf>2</inf>-Si<inf>3</inf>N<inf>4</inf>structure. This structure is stable to a thermofield stress and has a low density of interface states (N<inf>ss</inf>∼1012cm-2eV-1). The experimental Ge-IGFET characteristics measured at BOOK and 77K are presented and compared with theory. The strong influence of the reverse bias between the channel and the substrate on the effective mobility of carriers in the channel are reported. This effect is due to decreasing of the carrier drift mobility in the channel rather than to the change of the interface states charge. The data of the investigations of Ge-IGFET in weak inversion are presented. The spectrum of interface states N<inf>ss</inf>(E) is determined. This spectrum is exponential and is approximated by N<inf>ss</inf>(E) = 1012exp[12(E-E<inf>o</inf>)] cm-2eV-1in energy range 0.17eV < E < 0.3 eV, where E<inf>o</inf>= 0.17 eV, and coincides with spectrum obtained from the temperature dependence of the threshold voltage measurements.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"235 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115567391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Boron monophosphide on Si and device applications 硅上的单磷酸硼及其器件应用

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189298

K. Shohno, H. Otake

引用次数: 0

Low RF loss metal-ceramic bonds 低射频损耗金属-陶瓷键

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189285

R. Russell, O. Doehler

引用次数: 1

The buried-source VMOS dynamic RAM device 埋源VMOS动态RAM器件

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189230

J. Barnes, S. Shabde, F. Jenne

引用次数: 11

FA-CMOS process for low power PROM with low avalanche injection voltage 低雪崩注入电压低功率PROM的FA-CMOS工艺

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189234

S. Fukunaga, M. Kyomasu, A. Yasuoka, Y. Nakao, M. Nakayama

引用次数: 0

High performance output Schottky I2L/MTL 高性能输出肖特基I2L/MTL

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189226

J. M. Herman

引用次数: 5

High voltage dielectric isolation SCR integrated circuit process 高压介质隔离可控硅集成电路工艺

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189198

J. D. Beasom

引用次数: 8

X-Band TWT with high efficiency and high PRF capability x波段行波管具有高效率和高PRF能力

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189255

K.A. Estrella, J. A. Alvarez

引用次数: 0

On measurement of surface impurity profiles of laterally diffused regions 横向扩散区表面杂质分布的测量

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189300

J. Sansbury, J. Moll, Hee-Gook Lee

引用次数: 2