低射频损耗金属-陶瓷键

R. Russell, O. Doehler
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引用次数: 1

摘要

高功率微波管射频电路中的金属-陶瓷界面可能成为衰减源、热障,并导致热失效。工艺改进,导致了一种可靠的技术,用于应用Ti-Mo-Cu薄膜,具有低损耗,紧密的尺寸公差和高传热,已经优化了先前报道的工作。铍的溅射金属化和随后的铜扩散钎焊构成了基本过程。通过严格控制钛层厚度至250Å,消除了远程故障。结合强度达到了铍屈服应力的12000 lbf/in2级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low RF loss metal-ceramic bonds
Metal-ceramic interfaces in RF circuits of high power microwave tubes can be the source of attenuation, a heat barrier, and lead to thermal failure. Process improvements, leading to a reliable technique for applying Ti-Mo-Cu thin films that have low losses, close dimensional tolerence and high heat transfer, have been optimized over previously reported works. Sputter metallization of beryllia and subsequent diffusion brazing to copper comprise the basic process. Long range failures have been eliminated through strict control of the titanium layer thickness to 250Å. Bond strengths to the order of beryllia's yield stress of 12000 lbf/in2are achievable.
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