{"title":"硅上的单磷酸硼及其器件应用","authors":"K. Shohno, H. Otake","doi":"10.1109/IEDM.1977.189298","DOIUrl":null,"url":null,"abstract":"n- or p-type boron monophosphide (BP) with a forbidden energy gap of 2.0 eV was epitaxially grown on Si substrates using a B2H6-PH3-H2system, n-type (phosphorous) or p-type (boron) diffusion layers were also formed in the Si substrates. By combining the conductivity type of the BP, the diffusion layer and the Si substrate, several types of BP-Si junctions were realized. Two examples of applied devices were a wide gap window solar cell (η = 8.3%) and a wide gap emitter transistor (β = 16). The focus of our research projects on BP is the development of III-V compound semiconductor technology along the lines of the Si planar process.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Boron monophosphide on Si and device applications\",\"authors\":\"K. Shohno, H. Otake\",\"doi\":\"10.1109/IEDM.1977.189298\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"n- or p-type boron monophosphide (BP) with a forbidden energy gap of 2.0 eV was epitaxially grown on Si substrates using a B2H6-PH3-H2system, n-type (phosphorous) or p-type (boron) diffusion layers were also formed in the Si substrates. By combining the conductivity type of the BP, the diffusion layer and the Si substrate, several types of BP-Si junctions were realized. Two examples of applied devices were a wide gap window solar cell (η = 8.3%) and a wide gap emitter transistor (β = 16). The focus of our research projects on BP is the development of III-V compound semiconductor technology along the lines of the Si planar process.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189298\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189298","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
n- or p-type boron monophosphide (BP) with a forbidden energy gap of 2.0 eV was epitaxially grown on Si substrates using a B2H6-PH3-H2system, n-type (phosphorous) or p-type (boron) diffusion layers were also formed in the Si substrates. By combining the conductivity type of the BP, the diffusion layer and the Si substrate, several types of BP-Si junctions were realized. Two examples of applied devices were a wide gap window solar cell (η = 8.3%) and a wide gap emitter transistor (β = 16). The focus of our research projects on BP is the development of III-V compound semiconductor technology along the lines of the Si planar process.
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