FA-CMOS process for low power PROM with low avalanche injection voltage

Abstract

The combination of FAMOS and CMOS processes produces a new PROM with high performance and low power. This combined process named FA-CMOS will be described. The FA-CMOS process is based on the conventional silicon gate CMOS process using the selective oxidation process (SOP) technology. It is necessary to form the avalanche injection region capable of programming with low voltage without the breakdown of N+P-junction ( N+diffusion to P-well region ). Arsenic ions are implanted to form this region and the avalanche injection voltages of less than 20 V are obtained. In addition to the above mentioned process, the double diffusion technology simplifies the formation of source-drain and isolation region. Extremely low power ( 0.6 µW/bit ) PROM was successfully fabricated using the FA-CMOS process.