Russian Microelectronics最新文献_第8页

Technique of Time Depend Dielectric Breakdown for the Wafer-Level Testing of Thin Dielectrics of MIS Devices 用于 MIS 设备薄介质晶圆级测试的随时间变化的介质击穿技术

Russian Microelectronics Pub Date : 2024-03-21 DOI: 10.1134/s1063739723600450

D. V. Andreev, V. M. Maslovsky, V. V. Andreev

{"title":"Technique of Time Depend Dielectric Breakdown for the Wafer-Level Testing of Thin Dielectrics of MIS Devices","authors":"D. V. Andreev, V. M. Maslovsky, V. V. Andreev","doi":"10.1134/s1063739723600450","DOIUrl":"https://doi.org/10.1134/s1063739723600450","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract—</h3><p>The paper proposes a novel technique of time depend dielectric breakdown for the wafer-level testing of thin dielectric of MIS devices based on concatenation of J-Ramp and Bounded J-Ramp methods. The suggested method enhances the existing method capabilities by introducing measurement injection modes. When DUT is under the measurement mode, the charge injection into the gate dielectric is realized under constant current density <i>J</i><sub>m</sub> at which any significant charge degradation of dielectric is not observed. Introduction of the measurement modes give an opportunity to monitor a change of the charge state of thin gate dielectric during all the test. The suggested test is started similar to Bounded J-Ramp method and then in order to raise the monitoring speed, the value of bounded current <i>J</i><sub>b</sub> could be step wisely increased over certain time intervals which are much longer in time in comparison with J-Ramp method. As a result, the charge injection into the gate dielectric could be implemented under multiple <i>J</i><sub>b</sub> values. This test algorithm gives an opportunity to greatly enhance functional capabilities of the existing test methods and the suggested technique raises speed to test.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"55 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140885352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Quantum Control Landscapes and Traps 量子控制景观和陷阱

Russian Microelectronics Pub Date : 2024-03-21 DOI: 10.1134/s1063739723600796

B. O. Volkov, A. N. Pechen

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A Method to Compute QAOA Fixed Angles 计算 QAOA 固定角度的方法

Russian Microelectronics Pub Date : 2024-03-21 DOI: 10.1134/s1063739723600577

A. Yu. Chernyavskiy, B. I. Bantysh

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Constant-Depth Algorithm for Quantum Hashing 量子散列的恒定深度算法

Russian Microelectronics Pub Date : 2024-03-21 DOI: 10.1134/s106373972360067x

A. Vasiliev

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Hybrid Atom-Ion Quantum Gate Engineering 原子-离子混合量子门工程

Russian Microelectronics Pub Date : 2024-03-21 DOI: 10.1134/s1063739723600437

D. Shaposhnikov, L. Fedichkin

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Rhenium Effect in Thin Films and Wires of Tungsten–Rhenium Alloys 钨铼合金薄膜和金属丝中的铼效应

Russian Microelectronics Pub Date : 2024-03-21 DOI: 10.1134/s1063739723600395

A. V. Timakov, V. I. Shevyakov

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Simulation of the Radio Absorbing Properties of Pyrolyzed Polyacrylonitrile in the Frequency Range from 3 to 50 GHz 模拟热解聚丙烯腈在 3 至 50 千兆赫频率范围内的无线电吸收特性

Russian Microelectronics Pub Date : 2024-03-05 DOI: 10.1134/s1063739723080036

D. P. Radchenko, I. V. Zaporotskova, L. V. Kozhitov, P. A. Zaporotskov, A. V. Popkova, V. G. Kosushkin

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Simulation Modeling of an Analog Impulse Neural Network Based on a Memristor Crossbar Using Parallel Computing Technologies 利用并行计算技术建立基于晶闸管交叉棒的模拟脉冲神经网络仿真模型

Russian Microelectronics Pub Date : 2024-03-05 DOI: 10.1134/s1063739723080024

A. Yu. Morozov, K. K. Abgaryan, D. L. Reviznikov

{"title":"Simulation Modeling of an Analog Impulse Neural Network Based on a Memristor Crossbar Using Parallel Computing Technologies","authors":"A. Yu. Morozov, K. K. Abgaryan, D. L. Reviznikov","doi":"10.1134/s1063739723080024","DOIUrl":"https://doi.org/10.1134/s1063739723080024","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The issues of simulation modeling of an analog impulse neural network based on memristive elements in the problem of pattern recognition are studied. Simulation modeling allows us to configure the network at the level of a mathematical model, and subsequently use the obtained parameters directly in the process of operation. The network model is given as a dynamic system, which can consist of tens or hundreds of thousands of ordinary differential equations. Naturally, there is a need for an efficient and parallel implementation of an appropriate simulation model. Open multiprocessing (OpenMP) is used as the technology for parallelizing calculations, since it allows us to easily create multithreaded applications in various programming languages. The efficiency of parallelization is evaluated on the problem of modeling the process of training the network to recognize a set of five images of a size of 128 by 128 pixels, which leads to the solution of about 80 000 differential equations. In this problem, the calculations are accelerated by a factor of over six. According to the experimental data, the operating character of memristors is stochastic, as shown by the scatter in the current-voltage characteristics (VACs) when switching between high-resistance and low-resistance states. To take this feature into account, a memristor model with interval parameters is used, which gives upper and lower limits on the values of interest, and encloses the experimental curves in corridors. When simulating the operation of the entire analog self-learning impulse neural network, in each epoch of training, the parameters of the memristors are set randomly from the selected intervals. This approach makes it possible to dispense with the use of a stochastic mathematical apparatus, thereby further reducing computational costs.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"71 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140032728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling a Broadband Amplifier on a Printed Circuit Board with an Increased Conductivity Dielectric 在带增导电介质的印刷电路板上模拟宽带放大器

Russian Microelectronics Pub Date : 2024-02-15 DOI: 10.1134/s1063739723070028

D. A. Abrameshin, E. D. Pozhidaev, V. S. Saenko, S. R. Tumkovskiy

{"title":"Modeling a Broadband Amplifier on a Printed Circuit Board with an Increased Conductivity Dielectric","authors":"D. A. Abrameshin, E. D. Pozhidaev, V. S. Saenko, S. R. Tumkovskiy","doi":"10.1134/s1063739723070028","DOIUrl":"https://doi.org/10.1134/s1063739723070028","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Spacecraft are affected by cosmic plasma electrons, which cause the electrification of their dielectric materials. As a result, electrostatic discharges occur, leading to failures in the operation of onboard radio electronics, reducing the period of the active existence of the spacecraft. The use of composite polymer dielectrics with increased conductivity is a promising method for protecting against the effects of electrostatic discharges. This paper presents the results of modeling the characteristics of a broadband amplifier made on a printed circuit board using a highly conductive composite dielectric. Resistances are added to the model of the ongoing electrical processes that characterize current leakage from the circuit nodes to the zero conductor due to the decrease in the specific volume resistance of the printed circuit board’s material. A computer simulation of a broadband amplifier and an experimental study of its performance in the operating frequency band of 0.5–70 MHz are carried out. It is shown that a change in the bandwidth and gain occurs only when the conductivity becomes higher than 6 × 10<sup>–4</sup> Ohm<sup>–1</sup> m<sup>–1</sup>. The results of an experimental study of a broadband amplifier show that the proposed model for accounting for the specific volume resistance of the printed circuit board material adequately describes its characteristics. The fact that even with a conductivity of 10<sup>–9</sup> Ohm<sup>–1</sup> m<sup>–1</sup> electrostatic discharges are excluded indicates the possibility of protecting broadband amplifiers as part of the radio-electronic devices of spacecraft from electrification when using composite dielectrics of increased conductivity.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139770907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Research on Testing Methods of SINAD Analog-to-Information Converters SINAD 模数转换器测试方法研究

Russian Microelectronics Pub Date : 2024-02-15 DOI: 10.1134/s1063739723070132

M. N. Polunin, V. V. Losev, Yu. A. Chaplygin

{"title":"Research on Testing Methods of SINAD Analog-to-Information Converters","authors":"M. N. Polunin, V. V. Losev, Yu. A. Chaplygin","doi":"10.1134/s1063739723070132","DOIUrl":"https://doi.org/10.1134/s1063739723070132","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>—</h3><p>The operation of an analog-to-information converter (AIC) is based on the theory of compressed sampling, which allows us to process a signal with a small number of reports, provided that the input signal is compressible. As a result, the collected data may not have all the information about the spectrum of the input signal, and the standard method for estimating the signal-to-noise and distortion (SINAD) ratio used for an analog-to-digital converter (ADC) is not applicable. In this paper a new technique for calculating the SINAD of an AIC is presented. The idea of this technique is to select the parameters of white noise, the power of which is equal to the power of the distortion and noise of the AIC. To study the results of the new technique, mathematical modeling of the AIC and the reference ADC with the same characteristics is carried out. The SINAD of the AIC is evaluated using the techniques presented in the literature and the proposed method. The SINAD of the AIC is calculated using the techniques presented in the literature and the proposed technique. The SINAD of the ADC is calculated for comparison. The new (proposed) technique demonstrates a stable result: the SINAD of the AIC coincides with the SINAD of the ADC.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139771017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0