{"title":"White Noise Suppression Based on Wiener Filtering Using Neural Network Technologies in the Domain of the Discrete Wavelet Transform","authors":"K. A. Alimagadov, S. V. Umnyashkin","doi":"10.1134/s106373972307003x","DOIUrl":"https://doi.org/10.1134/s106373972307003x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>—</h3><p>Computer vision algorithms are widely used in solving a number of applied problems. The correct operation of such algorithms depends on the photo and video data that they receive at the input, which are subject to the effect of noise; hence, noise suppression is an important stage in low-level digital image processing. In this work, the Wiener filtering of normal white noise with using neural networks in the domain of the discrete wavelet transform is studied. The architecture of the networks and the algorithm developed for their application for filtering in the domain of a discrete wavelet transform are described. The proposed algorithm is tested on the BSDS500 dataset at various noise levels. The filtering quality is evaluated by the calculated signal-to-noise ratio (SNR) and structural similarity index (SSIM) values. The results of processing test images indicate that the developed algorithm is superior in noise reduction quality to most of the other considered filters, including Wiener filtering without the use of neural networks in the domain of the discrete wavelet transform.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"26 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139771330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. A. Tsarik, N. P. Nekrasov, V. K. Nevolin, I. I. Bobrinetskiy
{"title":"Features of the Formation of Suspended Graphene Structures over an Array of Microsized Pores","authors":"K. A. Tsarik, N. P. Nekrasov, V. K. Nevolin, I. I. Bobrinetskiy","doi":"10.1134/s1063739723070193","DOIUrl":"https://doi.org/10.1134/s1063739723070193","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Structures based on suspended graphene are promising elements for problems in photonics and sensory electronics due to the possibility of the elimination of trap states in the substrate and the increase in the speed and sensitivity of the graphene layer. The development of techniques for introducing carbon nanostructures in silicon technology to create micro- and nanoelectronic devices is also relevant. In this paper, the features of the technique for the formation of a silicon membrane and pores in it, as well as the deposition of graphene on silicon membranes, are presented. The Raman spectra of suspended graphene showing a shift of the G-peak by 4.5 cm<sup>–1</sup> and the 2D peak by 7.5 cm<sup>–1</sup> relative to the peaks of the graphene lying on silicon are obtained. Using the curves of the approach and retraction of the probe of an atomic force microscope, the possible deflection of the suspended graphene is studied, showing the distances at which the attractive and repulsive forces are located in the probe–suspended graphene system. It is established that the significant deflection of graphene, by 1 µm at a pore diameter of 5 µm, makes laser focusing is difficult. This primarily affects the use of such structures as a base for a gas or fluid sensor of various organic compounds, as well as for suspended graphene-based transistors.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139771135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Predictive Control System of a DC-DC Boost Converter with Optimization of the Operating Frequency","authors":"A. A. Cherdintsev","doi":"10.1134/s1063739723070065","DOIUrl":"https://doi.org/10.1134/s1063739723070065","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Predictive control systems can significantly reduce the cost of setting up and developing converters. Currently, existing methods for implementing control systems have shown their effectiveness. However, some problems, such as ease of design and configuration of the device, and resistance to changes in load parameters, still require searching for new approaches to implement predictive control systems. This paper presents a new method for modifying the predictive control system model for DC-DC boost converters. The developed control system, in addition to the function of maintaining the required level of output voltage, optimizes the operation of the device to achieve maximum efficiency. It is shown that the output voltage level is regulated by changing the duty cycle of the control signal; and the efficiency of the device, by changing the operating period. It is established that a modified system for calculating the objective function allows using a sufficiently large planning horizon due to the reduction in the required computing power. The presented simulation results demonstrate the advantages of the proposed control method, including a fast transient response and a high degree of robustness.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139771013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Circuit Implementation of Modular Adders in Custom CMOS VLSI and FPGA","authors":"P. N. Bibilo, N. A. Kirienko","doi":"10.1134/s1063739723070053","DOIUrl":"https://doi.org/10.1134/s1063739723070053","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>—</h3><p>Modular arithmetic is often used to create high-speed computing systems based on both custom digital VLSI circuits and field-programmable gate arrays (FPGAs). The problems of hardware implementation of neural networks based on modular arithmetic calculations are relevant today. In this study, the problem of implementing modular adders in the library for designing custom CMOS VLSI systems and FPGAs is considered. Systems of both fully and incompletely defined (partial) Boolean functions, as well as algorithmic descriptions in the VHDL language, are used as the initial descriptions of modular adders. Logical optimization preceding logical synthesis is carried out in the class of disjunctive normal forms, Reed–Muller polynomial representations, and representations of Boolean function systems by binary decision diagrams. Nine experiments are carried out on the efficiency of applying logic optimization in the circuit implementation of modular adders in the library for designing custom CMOS VLSI circuits and FPGAs. The obtained circuits of modular adders for CMOS VLSI systems are estimated by area (total number of transistors), delay, and power consumption; and for FPGAs, by the number of programmable logic elements and power consumption. The experimental results show that the use of partial function models and preliminary logical optimization based on binary decision diagrams makes it possible to obtain modular adders characterized by lower delay values. Algorithmic VHDL models make it possible to obtain CMOS modular adder circuits with a smaller area and lower power consumption.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139770910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fatigue Analysis and Estimation of the Number of Exposure Cycles until the Failure of the Sensitive Element of a Micromechanical Capacitive Accelerometer","authors":"Ye Ko Ko Aung, B. M. Simonov, S. P. Timoshenkov","doi":"10.1134/s1063739723070090","DOIUrl":"https://doi.org/10.1134/s1063739723070090","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Ensuring the reliability of the functioning of MEMS devices is the most important task facing developers. Due to the variety of designs and materials used in MEMS devices, various failure mechanisms can occur. Most of these devices contain moving parts of the structure. The fatigue properties of the structural materials used and their aging under prolonged repetitive cyclic loading can lead to failure, which directly affects the reliability of the device. In this paper the fatigue properties and reliability of the sensitive element (SE) of a micromechanical accelerometer (MMA) sandwich structure of a capacitive type made of silicon under the conditions of the mechanism of fatigue failure of the material are analyzed. The number of cycles of periodic exposure for the occurrence of a failure and the failure rate of SEs are calculated. The crystallographic orientation of the surface plane of silicon—the SE material—is considered. The simulation results show that the fatigue life of SE of an MMA made of silicon can be sufficiently strong for general purpose applications.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"43 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139771141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Investigation of the Electrochemical Properties of the Anode of Na-Ion Battery Based on Nanotubular Anodic TiO2","authors":"D. A. Dronova, A. A. Dronov","doi":"10.1134/s1063739723070223","DOIUrl":"https://doi.org/10.1134/s1063739723070223","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>It is common practice to use mesoporous layers, nanofibers, and nanospheres of titanium oxide of various chemical and phase compositions as electrodes for microbatteries. Studies of the properties of TiO<sub>2</sub> nanotubes (TiO<sub>2</sub> NT’s) have shown the relevance of using it as an anode electrode for sodium-ion batteries. In this paper a method for modifying TiO<sub>2</sub> NT’s with the removal of the inner layer of nanotubes by etching in a mixture of sulfuric acid and hydrogen peroxide is proposed. It is demonstrated that the inner mesoporous layer of nanotubes hinders the embedding and extraction, respectively, of sodium ions into and from the structure of TiO<sub>2</sub> NT’s. Cyclic voltammetry studies show that after the removal of the inner part of the nanotubes, anodic and cathodic peaks appear, which are responsible for the extraction and intercalation of sodium ions, respectively. It is established that sodium ions are not intercalated into the crystal lattice of the TiO<sub>2</sub> NT’s sample after the etching of the inner layer, which indicates the reversibility of the ion introduction process. The studies have shown that TiO<sub>2</sub> NT’s can be used as an anode electrode in ionic accumulators and microbatteries due to the electrochemical characteristics and the possibility of various modifications of the TiO<sub>2</sub> NT’s array.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"235 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139771042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. V. Yakunina, N. P. Nekrasov, V. K. Nevolin, I. I. Bobrinetskiy
{"title":"Conductivity Switching in Lateral Channels Based on MXene Ti3C2Tx","authors":"N. V. Yakunina, N. P. Nekrasov, V. K. Nevolin, I. I. Bobrinetskiy","doi":"10.1134/s1063739723070260","DOIUrl":"https://doi.org/10.1134/s1063739723070260","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>At present, sandwich structures based on transition metal carbides or nitrides, MXenes, have demonstrated their unique properties in optics, electronics, and photonics. The formation of elements with neuromorphic properties is a promising trend. In this paper, the memristive effect in lateral structures based on Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> MXenes is considered. The control of the formation of several current states in the conductivity of a MXene channel depending on the applied potential difference is experimentally studied. The structure is a film of the MXene Ti<sub>3</sub>C<sub>2</sub>T<sub><i>x</i></sub> composition deposited by solution deposition between the gold electrodes formed on the channel surface on a silicon substrate with silicon oxide 200 nm thick. The samples obtained are analyzed using atomic force microscopy and Raman spectroscopy. It is established that in these structures it is possible to form the given conductivity level, depending on the applied electric field. The observed change in the conductivity ratio is two orders of magnitude. Conductivity in structures based on MXene is determined by the trap states in the channel and persists for more than 5 min.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139770905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Investigating the Capabilities of Recurrent Neural Networks for Solving the Problem of Classifying Poorly Structured Information on the Example of Bibliographic Data","authors":"E. N. Petrov, E. M. Portnov","doi":"10.1134/s1063739723070120","DOIUrl":"https://doi.org/10.1134/s1063739723070120","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\u0000<b>Abstract</b>—</h3><p>With the development of information technology, new fields of automatic data processing are becoming available, including bibliographic data. When information is collected from different sources and contains nonuniformly structured bibliographic records with formatting mistakes, transmitting the data to a summary table takes considerable time and effort and the result is subject to the influence of the human factor. Consequently, automatic bibliographic data processing is relevant and in demand. This paper investigates the capabilities of recurrent neural networks (RNSs) in relation to solving the problem of classifying poorly structured bibliographic information. It is shown that in order to use a RNS, it is necessary to change from the natural presentation of the bibliographic data collected to an indicative one, i.e., to present the data as a set of features. Selecting such a set of features is a separate complex problem. The developed RNS structure is implemented using the Python programming language. To evaluate the developed software module’s performance, a test set was formed from the publications list of the National Research University of Electronic Technology’s (MIET) Institute of Systems and Software Engineers and Information Technology, covering the past five years. An accuracy of 86%, which is 11% higher than the result obtained using a feed-forward neural network, is attained. The developed feature set and RNS structure allow automated bibliographic data processing, followed by the mandatory correction of the results by an operator.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139771148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"MEMS Switch Based on a Cantilever with Increased Contact Force","authors":"I. A. Belozerov, I. V. Uvarov","doi":"10.1134/s1063739723700774","DOIUrl":"https://doi.org/10.1134/s1063739723700774","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>MEMS switches are of significant interest for promising radio-electronic systems, but have not yet found widespread use due to the low reliability of microcontacts. The switch develops a low contact force, which results in high and unstable contact resistance. The force is usually increased by using electrodes with complex shapes and large areas, but a simple and compact configuration is preferable. This study presents a switch based on a 50-µm-long cantilever. For the first time, a method for selecting the vertical dimensions of the product is described, increasing the contact force to values in excess of 100 μN, necessary for reliable operation of the contacts. Test samples are manufactured and tested, and the performance characteristics are compared with the calculation results.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"254 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139760458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mohamed Boumalkha, Mohammed Lahsaini, Hafid Griguer, Otman El Mrabet, Taj Eddin Elhamadi, Moulay El Hassane Archidi, Jamal EL Aoufi, Mohamed Taouzari
{"title":"Implementation of an LNA Using a Microstrip Coupler as a DC-Block for Sub-6 5G Communication Systems","authors":"Mohamed Boumalkha, Mohammed Lahsaini, Hafid Griguer, Otman El Mrabet, Taj Eddin Elhamadi, Moulay El Hassane Archidi, Jamal EL Aoufi, Mohamed Taouzari","doi":"10.1134/s106373972370066x","DOIUrl":"https://doi.org/10.1134/s106373972370066x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>This paper presents the design strategy of a microwave low noise amplifier (LNA) in microstrip technology for sub-6 GHz 5G communication systems. A microstrip coupler is exploited to design a DC block in order to avoid unwanted parasitic effects generated by lumped elements and to facilitate fabrication. Bias and matching networks are implemented using microstrip transmission lines. Based on the designed circuit, a prototype is fabricated and measured using an Agilent Technologies (hp)® ATF13786 field effect transistor. The proposed LNA is simulated and measured at 3.5 GHz. The results demonstrate that the proposed LNA achieves high gain of 12.7 dB, noise figure less than 2 dB, input and output reflection coefficients less than –10 dB, and unconditional stability over the desired bandwidth. Regarding the large signal results, the proposed LNA yields excellent performance with an output power of 16.4 dBm, and a power added efficiency (PAE) of 18%. Furthermore, the proposed LNA exhibits good linearity with an output compression point at 1 dB (OP1dB) of 0 dBm, and a third-order intercept point (OIP3) greater than +37.7 dBm.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"254 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139760246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}