Investigation of the Electrochemical Properties of the Anode of Na-Ion Battery Based on Nanotubular Anodic TiO2

Q4 Engineering
D. A. Dronova, A. A. Dronov
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引用次数: 0

Abstract

It is common practice to use mesoporous layers, nanofibers, and nanospheres of titanium oxide of various chemical and phase compositions as electrodes for microbatteries. Studies of the properties of TiO2 nanotubes (TiO2 NT’s) have shown the relevance of using it as an anode electrode for sodium-ion batteries. In this paper a method for modifying TiO2 NT’s with the removal of the inner layer of nanotubes by etching in a mixture of sulfuric acid and hydrogen peroxide is proposed. It is demonstrated that the inner mesoporous layer of nanotubes hinders the embedding and extraction, respectively, of sodium ions into and from the structure of TiO2 NT’s. Cyclic voltammetry studies show that after the removal of the inner part of the nanotubes, anodic and cathodic peaks appear, which are responsible for the extraction and intercalation of sodium ions, respectively. It is established that sodium ions are not intercalated into the crystal lattice of the TiO2 NT’s sample after the etching of the inner layer, which indicates the reversibility of the ion introduction process. The studies have shown that TiO2 NT’s can be used as an anode electrode in ionic accumulators and microbatteries due to the electrochemical characteristics and the possibility of various modifications of the TiO2 NT’s array.

Abstract Image

基于纳米管状阳极 TiO2 的 Na 离子电池阳极的电化学特性研究
摘要 使用各种化学成分和相组成的氧化钛介孔层、纳米纤维和纳米球作为微型电池的电极是一种常见的做法。对二氧化钛纳米管(TiO2 NT)特性的研究表明,将其用作钠离子电池的阳极电极具有现实意义。本文提出了一种通过在硫酸和过氧化氢的混合物中蚀刻去除纳米管内层来改性二氧化钛纳米管的方法。结果表明,纳米管内层介孔分别阻碍了钠离子嵌入和从二氧化钛晶体结构中提取钠离子。循环伏安研究表明,去除纳米管的内层后,会出现阳极峰和阴极峰,它们分别负责钠离子的萃取和插层。可以确定的是,在蚀刻内层后,钠离子并没有插层到 TiO2 NT 样品的晶格中,这表明离子引入过程是可逆的。研究表明,由于 TiO2 NT 的电化学特性以及对其阵列进行各种改性的可能性,TiO2 NT 可用作离子蓄电池和微型电池的阳极电极。
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来源期刊
Russian Microelectronics
Russian Microelectronics Materials Science-Materials Chemistry
CiteScore
0.70
自引率
0.00%
发文量
43
期刊介绍: Russian Microelectronics  covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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