原子-离子混合量子门工程

Q4 Engineering

Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s1063739723600437

D. Shaposhnikov, L. Fedichkin

引用次数: 0

摘要

摘要-本文概述了最近在利用激光冷却被困离子控制超冷里德伯原子方面取得的一些研究进展。我们还展示了在这种系统上创建多 Q 位门的有效方法。我们演示了如何实现与 C-PHASE 类似的门，并讨论了原子-离子耦合方法的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Hybrid Atom-Ion Quantum Gate Engineering

查看原文本刊更多论文

Hybrid Atom-Ion Quantum Gate Engineering

Abstract—

Overview of some recent research advancements in ultracold Rydberg atoms with laser-cooled trapped ions control is presented. We show also an effective way to create multi-q-bit gates on such a system. We demonstrate how to implement a gate similar to C-PHASE and discuss the prospects of atom-ion coupling approach.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.