{"title":"钨铼合金薄膜和金属丝中的铼效应","authors":"A. V. Timakov, V. I. Shevyakov","doi":"10.1134/s1063739723600395","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>This research is devoted to the study of the influence of rhenium admixture on the mechanical and conductive properties of tungsten thin films. The results of the study of adhesive films properties are obtained. For pure tungsten, tungsten–rhenium 5% and tungsten–rhenium 20% wires with a thickness of 0.25 μm studies of the structure and elemental analysis at the grain boundary and in the grain itself were carried out. An explanation of the reason for improving the mechanical properties of tungsten thin films when rhenium is added to their composition (“rhenium effect”) is proposed. A study of the mechanical stresses level has been carried out, which corresponds to the theoretically obtained data. The resistivity was measured for pure tungsten films and films with alloying rhenium of 5, 10, 15 and 20%. Films that meet the requirements of industry standards have been obtained.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"22 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Rhenium Effect in Thin Films and Wires of Tungsten–Rhenium Alloys\",\"authors\":\"A. V. Timakov, V. I. Shevyakov\",\"doi\":\"10.1134/s1063739723600395\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>This research is devoted to the study of the influence of rhenium admixture on the mechanical and conductive properties of tungsten thin films. The results of the study of adhesive films properties are obtained. For pure tungsten, tungsten–rhenium 5% and tungsten–rhenium 20% wires with a thickness of 0.25 μm studies of the structure and elemental analysis at the grain boundary and in the grain itself were carried out. An explanation of the reason for improving the mechanical properties of tungsten thin films when rhenium is added to their composition (“rhenium effect”) is proposed. A study of the mechanical stresses level has been carried out, which corresponds to the theoretically obtained data. The resistivity was measured for pure tungsten films and films with alloying rhenium of 5, 10, 15 and 20%. Films that meet the requirements of industry standards have been obtained.</p>\",\"PeriodicalId\":21534,\"journal\":{\"name\":\"Russian Microelectronics\",\"volume\":\"22 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Russian Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063739723600395\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739723600395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
Rhenium Effect in Thin Films and Wires of Tungsten–Rhenium Alloys
Abstract
This research is devoted to the study of the influence of rhenium admixture on the mechanical and conductive properties of tungsten thin films. The results of the study of adhesive films properties are obtained. For pure tungsten, tungsten–rhenium 5% and tungsten–rhenium 20% wires with a thickness of 0.25 μm studies of the structure and elemental analysis at the grain boundary and in the grain itself were carried out. An explanation of the reason for improving the mechanical properties of tungsten thin films when rhenium is added to their composition (“rhenium effect”) is proposed. A study of the mechanical stresses level has been carried out, which corresponds to the theoretically obtained data. The resistivity was measured for pure tungsten films and films with alloying rhenium of 5, 10, 15 and 20%. Films that meet the requirements of industry standards have been obtained.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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