{"title":"Research on Testing Methods of SINAD Analog-to-Information Converters","authors":"M. N. Polunin, V. V. Losev, Yu. A. Chaplygin","doi":"10.1134/s1063739723070132","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">\n<b>Abstract</b>—</h3><p>The operation of an analog-to-information converter (AIC) is based on the theory of compressed sampling, which allows us to process a signal with a small number of reports, provided that the input signal is compressible. As a result, the collected data may not have all the information about the spectrum of the input signal, and the standard method for estimating the signal-to-noise and distortion (SINAD) ratio used for an analog-to-digital converter (ADC) is not applicable. In this paper a new technique for calculating the SINAD of an AIC is presented. The idea of this technique is to select the parameters of white noise, the power of which is equal to the power of the distortion and noise of the AIC. To study the results of the new technique, mathematical modeling of the AIC and the reference ADC with the same characteristics is carried out. The SINAD of the AIC is evaluated using the techniques presented in the literature and the proposed method. The SINAD of the AIC is calculated using the techniques presented in the literature and the proposed technique. The SINAD of the ADC is calculated for comparison. The new (proposed) technique demonstrates a stable result: the SINAD of the AIC coincides with the SINAD of the ADC.</p>","PeriodicalId":21534,"journal":{"name":"Russian Microelectronics","volume":"24 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Russian Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/s1063739723070132","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract—
The operation of an analog-to-information converter (AIC) is based on the theory of compressed sampling, which allows us to process a signal with a small number of reports, provided that the input signal is compressible. As a result, the collected data may not have all the information about the spectrum of the input signal, and the standard method for estimating the signal-to-noise and distortion (SINAD) ratio used for an analog-to-digital converter (ADC) is not applicable. In this paper a new technique for calculating the SINAD of an AIC is presented. The idea of this technique is to select the parameters of white noise, the power of which is equal to the power of the distortion and noise of the AIC. To study the results of the new technique, mathematical modeling of the AIC and the reference ADC with the same characteristics is carried out. The SINAD of the AIC is evaluated using the techniques presented in the literature and the proposed method. The SINAD of the AIC is calculated using the techniques presented in the literature and the proposed technique. The SINAD of the ADC is calculated for comparison. The new (proposed) technique demonstrates a stable result: the SINAD of the AIC coincides with the SINAD of the ADC.
期刊介绍：
Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.
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