Simulation of the Radio Absorbing Properties of Pyrolyzed Polyacrylonitrile in the Frequency Range from 3 to 50 GHz

Q4 Engineering

Russian Microelectronics Pub Date : 2024-03-05 DOI:10.1134/s1063739723080036

D. P. Radchenko, I. V. Zaporotskova, L. V. Kozhitov, P. A. Zaporotskov, A. V. Popkova, V. G. Kosushkin

引用次数: 0

Abstract—

At present, the electromagnetic characteristics of various materials, including polymeric materials, are being widely studied with the aim of using them as radio-absorbing coatings in electronics products. One such material is pyrolyzed polyacrylonitrile (PPAN). This article considers a model of electromagnetic wave absorption by PPAN layers with electrical conductivity of 72 and 180 S/m and a layer width of 0.15 to 2 mm, including those containing a metal filler (the so-called PPAN-based metal composite), in the frequency range of 3–50 GHz. The experimental data are compared with the data obtained in the course of simulation in terms of parameters such as the reflection, transmission, and absorption indices. Modeling is done in the software package COMSOL Multiphysics.

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模拟热解聚丙烯腈在 3 至 50 千兆赫频率范围内的无线电吸收特性

摘要目前，人们正在广泛研究包括聚合物材料在内的各种材料的电磁特性，目的是将它们用作电子产品中的无线电吸收涂层。热解聚丙烯腈（PPAN）就是这样一种材料。本文研究了导电率为 72 和 180 S/m、层宽为 0.15 至 2 mm 的 PPAN 层（包括含有金属填料的层，即所谓的 PPAN 基金属复合材料）在 3-50 GHz 频率范围内吸收电磁波的模型。实验数据与模拟过程中获得的数据在反射率、透射率和吸收率等参数方面进行了比较。建模是在 COMSOL Multiphysics 软件包中完成的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.