Advanced Lithography最新文献_第10页

Computational study of 3-dimensional photo lithography on limitations and possibility for novel structures 三维光刻技术的局限性和新结构的可能性的计算研究

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2658128

Y. Hirai, Tomoaki Osumi, Toshiaki Tanaka, M. Yasuda, M. Sasago

引用次数: 0

Metallic contamination reduction in polymer solution using membrane purification technology 膜净化技术减少聚合物溶液中的金属污染

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2657698

P. Muralidhar, A. Ramirez, A. Wu, Lawrence Chen, Yamin Liu, Luxi Shen, Robert F. Blacksmith, Sabrina Wong, Matthew Melanson, A. Rudenko

{"title":"Metallic contamination reduction in polymer solution using membrane purification technology","authors":"P. Muralidhar, A. Ramirez, A. Wu, Lawrence Chen, Yamin Liu, Luxi Shen, Robert F. Blacksmith, Sabrina Wong, Matthew Melanson, A. Rudenko","doi":"10.1117/12.2657698","DOIUrl":"https://doi.org/10.1117/12.2657698","url":null,"abstract":"As the patterning resolution of semiconductor manufacturing increases, so does the need to remove critical defects from the photochemical supply chain. In particular, metallic contaminants have been known to lead to various types of defects such as cone defects that contribute to significant yield loss 1. Hence, control of metallic contaminants is critical for these next generation lithography processes. Previous work has introduced the Purasol™ LS2 solvent purifier, capable of superior metal reduction in a wide range of photochemical solvents 2. Current work focuses on purification of polymer solutions, a key intermediate material in the photochemical ecosystem. We present data detailing the ability of the LS2 purifier to remove metals from a poly-(4-hydroxystyrene) (PHS) polymer solution. Purifier membrane in coupons as well as an LS2 purifier device are used in a series of experiments to investigate the metal removal efficiency in the polymer solution as a function of various experimental parameters. Metal removal is quantified using ICP-MS (inductively coupled plasma mass spectroscopy) measurements. In addition, we also present customer data demonstrating the effectiveness of the LS2 in purifying polymer solutions to reduce defects that degrade yield performance.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"230 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115750975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Chitosan as a water-based photoresist for DUV lithography 壳聚糖作为用于 DUV 光刻技术的水基光刻胶

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2658423

I. Servin, Alexandre Téolis, A. Bazin, A. Sarrazin, Paule Durin, O. Sysova, Corinne Gablin, Benoît Saudet, D. Léonard, O. Soppera, J. Leclercq, Y. Chevolot, R. Tiron, T. Delair, S. Trombotto

引用次数: 0

Next generation imprint equipment for patterning high quality micro-optical elements 下一代压印设备，用于高质量的微光学元件

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2657936

V. Kolli, F. Kloiber, S. Drieschner

{"title":"Next generation imprint equipment for patterning high quality micro-optical elements","authors":"V. Kolli, F. Kloiber, S. Drieschner","doi":"10.1117/12.2657936","DOIUrl":"https://doi.org/10.1117/12.2657936","url":null,"abstract":"Micro-optics are in great demand and indispensable key enabling elements in various emerging markets. High quality wafer-level micro-optics attract huge commercial interest in prestigious applications like 3D sensing and imaging for AR/VR in smart devices and automotive lighting [1]. The consumers aspire to have comprehensive functionalities on their smart gadgets, to enhance their view of the real environment by superimposing a virtual world. 3D sensing cameras with Time-of-Flight (ToF) modules provide a revolutionary virtual reality and imaging. A typical ToF module demands various highly efficient nano and micro-optical elements [2,3]. The next generation imprint equipment provided by SUSS MicroTec offers a versatile and sophisticated imprint mechanism to resolve complex microscale structures on a single imprint equipment. The advanced technical features include enhanced imprint gap measurement and a levelling mechanism, tunable forces during imprint, advanced design of microscopes for high alignment accuracy and cost-effective UV-LED flood exposure with high intensities. These comprehensive functionalities also make it possible to manufacture larger sets of stacked micro lens arrays with low aberration and minimal distortion of lens geometry. In this talk, we will present the capabilities of SUSS equipment for imprinting micro lens arrays (MLA) with alignment accuracy ≤ 1μm and less geometry variation < 1 %, over a 200 mm wafer surface. Moreover, in a high volume manufacturing environment, key to productivity are consistent and repeatable fabrication processes and operations. Therefore, we will also show the reliability of our equipment and the repeatability of producing high quality MLAs.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"218 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134395890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Indium nitrate hydrate films as EUV resists by evaluating with 92-eV electron beam 用92-eV电子束评价硝酸铟水合物薄膜的EUV抗性

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2663005

Jesse Grayson, Marisol Valdez, Weijie Xu, J. Hsu

{"title":"Indium nitrate hydrate films as EUV resists by evaluating with 92-eV electron beam","authors":"Jesse Grayson, Marisol Valdez, Weijie Xu, J. Hsu","doi":"10.1117/12.2663005","DOIUrl":"https://doi.org/10.1117/12.2663005","url":null,"abstract":"Indium nitrate hydrate films are evaluated as potential extreme ultraviolet (EUV) resists. The uniformity and stability of indium nitrate-based sol-gel precursor films are studied as a function of metal composition, concentration, chemical sources, precursor dissolution time, post-application bake (PAB) conditions, and relative humidity during the deposition. 0.1 M indium nitrate solution forms a 20-nm thick resist, ideal for EUV lithography. We find two types of defects: macroscale defects that are visible under an optical microscope and nanoscale defects that can only be detected using an atomic force microscope. Both types of defects are affected by humidity and dissolution time and are likely due to indium nitrate crystals. Once formed, indium nitrate hydrate films show great stability with no changes in defect density up to 3 weeks. Using a 92-eV electron beam as a proxy for the EUV source, preliminary studies show exposed films become insoluble after 10 min exposure (8 mC/cm2 dose), acting as a negative-tone resist. Results of in-situ Fourier-transformed infrared spectroscopy and residual gas analysis during the exposure show that the solubility switch is accompanied by the decomposition of nitrate species and the release of water.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"279 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133615932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Novel assist layers to enhance EUV lithography performance of photoresists on different substrates 新的辅助层，以提高光刻胶在不同基材上的EUV光刻性能

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2658529

Si Li, Joyce A. Lowes, Ruimeng Zhang, M. Luo, Kelsey E. Brakensiek, V. V. Driessche, D. Guerrero

{"title":"Novel assist layers to enhance EUV lithography performance of photoresists on different substrates","authors":"Si Li, Joyce A. Lowes, Ruimeng Zhang, M. Luo, Kelsey E. Brakensiek, V. V. Driessche, D. Guerrero","doi":"10.1117/12.2658529","DOIUrl":"https://doi.org/10.1117/12.2658529","url":null,"abstract":"In EUV lithography, good resist patterning requires an assist layer beneath it to provide adhesion to prevent pattern collapse of small features and allow for higher aspect ratios. In addition, future EUV high numerical aperture (NA) is expected to require a decrease in thickness from the overall patterning stack. In this study, we are exploring a fundamentally new approach to developing an alternative and cost-effective underlayer to functionalize surfaces and enable EUV patterning. Rather than forming a 5-nm polymer film between the resist and its substrate, we propose to modify the substrate by spin-coating a thinner layer. In contrast to conventional underlayers (5–10 nm), the substrate is modified by a sub-1-nm layer during baking. Comprehensive analysis of the surface modification and coating was conducted by GPC, ellipsometer, and contact angle to identify the structure, stability, coating quality, and surface energy. Lithographic performance of existing EUV resist with the assist of this thin layer on Si wafers and different silicon hardmasks was evaluated using NXE3400 EUV exposure system to print HP14nm line-space features. It has been demonstrated that this sub-1-nm layer is able to realize HP14nm with a wider process window, higher depth of focus, and lower LWR on a Si wafer. Moreover, a silicon hardmask that could not realize printable features had significantly improved lithographic performance with the assist of this layer. Comparisons were also made with the industry-standard HMDS priming. Systematic analysis indicates that a sub-1-nm layer exemplifies a novel and effective way to enhance photoresist-substrate compatibility and improve EUV lithographic performance.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126036485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The damage control of sub layer while ion-driven etching with vertical carbon profile implemented 实现了垂直碳轮廓离子驱动刻蚀时子层的损伤控制

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2657249

Seungjin Mun, Lina Yoo, Jongdeok Hong, J. Ahn, Kyung-yub Jeon, Ke Bai

引用次数: 0

A scientific framework for establishing ultrafast molecular dynamic research in imec’s AttoLab 在imec的AttoLab建立超快分子动力学研究的科学框架

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2660047

L. Galleni, Faegheh S. Sajjadian, T. Conard, I. Pollentier, K. Dorney, F. Holzmeier, E. Larsen, Daniel Escudero, G. Pourtois, M. V. van Setten, Paul A. W. van der Heide, J. Petersen

{"title":"A scientific framework for establishing ultrafast molecular dynamic research in imec’s AttoLab","authors":"L. Galleni, Faegheh S. Sajjadian, T. Conard, I. Pollentier, K. Dorney, F. Holzmeier, E. Larsen, Daniel Escudero, G. Pourtois, M. V. van Setten, Paul A. W. van der Heide, J. Petersen","doi":"10.1117/12.2660047","DOIUrl":"https://doi.org/10.1117/12.2660047","url":null,"abstract":"Science stands on three legs: hypothesis, experiment, and simulation. This holds true for researching extreme ultraviolet (EUV) exposure of photoresist. Hypothesis: For resist exposure as patterns get smaller and closer together, approaching molecular units in width and resist-height, the molecular dynamics will limit the working resolution of the resist due to the formation of printing defects. Without taking proper consideration of these dynamics, the single-patterning lithography roadmap may end prematurely. Experimentally we are developing methods for sub-picosecond tracking of photoionization-induced processes. Using ultrashort pulses of light to excite and probe new materials with techniques that show the interactive dynamics of electronic and nuclear motion at the very limits of light-speed. This certainly holds true for exposing photoresists with EUV where ultrafast photoreactions induce chemical change via multiple pathways such as high-energy ionization fragmentation, recombination, and multispecies combination that ideally end in low-energy electron transfer reactions, analogous to lower energy photoreaction (but with a charge). In the nonideal case, these reaction processes lead to incompatible byproducts of the radiolysis that lead to types of stochastic defects. To do ultrafast studies we must build a foundation of knowledge using atomistic simulation to interpret transient molecular dynamic processes. Before we can do this, we need to learn how to simulate various spectral modalities to provide a starting point. In this work, we examine X-ray Photoelectron Spectroscopy of a model resist and use atomistic simulation to interpret the reactant-product composition of the spectral samples.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":"CE-22 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121006220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin speed impact on photoresist thin film properties and EUV lithographic performance 旋转速度对光刻胶薄膜性能和极紫外光刻性能的影响

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2659101

Yinjie Cen, Choong-Sun Lee, Li Cui, S. Coley, J. Park, Benjamin D. Naab-Rafael, E. Aqad, Rochelle Rena, Tyler R Paul, Thomas Penniman, Jason Behnke, Julia T Early, Benjamin Foltz

引用次数: 0

Fabrication of dual damascene structure with nanoimprint lithography and dry-etching 用纳米压印和干法蚀刻制备双大马士革结构

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2657912

N. Takeuchi, Genna Hasegawa, T. Komukai, T. Iwasaki, M. Hatano, M. Komori, T. Kono

引用次数: 0