Advanced Lithography最新文献_第10页

Predicting the critical features of the chemically-amplified resist profile based on machine learning 基于机器学习预测化学放大抗蚀剂特征的关键特征

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2658664

Pengjie Kong, Lisong Dong, Xu Ma, Yayi Wei

引用次数: 0

Chitosan as a water-based photoresist for DUV lithography 壳聚糖作为用于 DUV 光刻技术的水基光刻胶

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2658423

I. Servin, Alexandre Téolis, A. Bazin, A. Sarrazin, Paule Durin, O. Sysova, Corinne Gablin, Benoît Saudet, D. Léonard, O. Soppera, J. Leclercq, Y. Chevolot, R. Tiron, T. Delair, S. Trombotto

引用次数: 0

Challenges for spacer and source/drain cavity patterning in CFET devices CFET器件中间隔器和源/漏腔设计的挑战

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2658073

G. Mannaert, H. Mertens, M. Hosseini, S. Demuynck, V. Nguyen, B. Chan, F. Lazzarino

{"title":"Challenges for spacer and source/drain cavity patterning in CFET devices","authors":"G. Mannaert, H. Mertens, M. Hosseini, S. Demuynck, V. Nguyen, B. Chan, F. Lazzarino","doi":"10.1117/12.2658073","DOIUrl":"https://doi.org/10.1117/12.2658073","url":null,"abstract":"In a complementary-FET (CFET), n- and p- type transistors are stacked on top of each other. This stacking approach results in very high aspect ratio vertical features which brings critical challenges for nanosheet (NSH), gate, spacer, and source/drain (S/D) cavity patterning. Silicon nitride spacers are commonly used to electrically isolate and protect the silicon gate during S/D epitaxial growth and to precisely define the channel length (Lg) [1-4]. In this work, we will discuss the spacer film opening, the optimization of the S/D cavity profile and propose options to reduce the gate hard mask consumption. We were able to straighten the S/D cavity profile in the SiGe superlattice substrate by tuning specific process parameters, during the various etch and over-etch steps of the stack. Chemical analysis of the sidewall of the cavity, by TEM/EDS, confirmed that the formation of a passivation oxi-nitride compound is key to achieve vertical cavity profile. The chemical mapping of the cavity was done through the Si and SiGe25% sheets. A Si, O and N containing passivation layer is present in the cavity which seems to be thicker at the top and thinner at the bottom of the cavity. Furthermore, polymer capping methods were investigated to reduce the consumption of oxide hard mask (HM) during spacer etch. Process optimization for the cavity shape in the S/D recess etch was conducted using TEM characterization.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128130473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Next generation imprint equipment for patterning high quality micro-optical elements 下一代压印设备，用于高质量的微光学元件

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2657936

V. Kolli, F. Kloiber, S. Drieschner

{"title":"Next generation imprint equipment for patterning high quality micro-optical elements","authors":"V. Kolli, F. Kloiber, S. Drieschner","doi":"10.1117/12.2657936","DOIUrl":"https://doi.org/10.1117/12.2657936","url":null,"abstract":"Micro-optics are in great demand and indispensable key enabling elements in various emerging markets. High quality wafer-level micro-optics attract huge commercial interest in prestigious applications like 3D sensing and imaging for AR/VR in smart devices and automotive lighting [1]. The consumers aspire to have comprehensive functionalities on their smart gadgets, to enhance their view of the real environment by superimposing a virtual world. 3D sensing cameras with Time-of-Flight (ToF) modules provide a revolutionary virtual reality and imaging. A typical ToF module demands various highly efficient nano and micro-optical elements [2,3]. The next generation imprint equipment provided by SUSS MicroTec offers a versatile and sophisticated imprint mechanism to resolve complex microscale structures on a single imprint equipment. The advanced technical features include enhanced imprint gap measurement and a levelling mechanism, tunable forces during imprint, advanced design of microscopes for high alignment accuracy and cost-effective UV-LED flood exposure with high intensities. These comprehensive functionalities also make it possible to manufacture larger sets of stacked micro lens arrays with low aberration and minimal distortion of lens geometry. In this talk, we will present the capabilities of SUSS equipment for imprinting micro lens arrays (MLA) with alignment accuracy ≤ 1μm and less geometry variation < 1 %, over a 200 mm wafer surface. Moreover, in a high volume manufacturing environment, key to productivity are consistent and repeatable fabrication processes and operations. Therefore, we will also show the reliability of our equipment and the repeatability of producing high quality MLAs.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134395890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Novel assist layers to enhance EUV lithography performance of photoresists on different substrates 新的辅助层，以提高光刻胶在不同基材上的EUV光刻性能

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2658529

Si Li, Joyce A. Lowes, Ruimeng Zhang, M. Luo, Kelsey E. Brakensiek, V. V. Driessche, D. Guerrero

{"title":"Novel assist layers to enhance EUV lithography performance of photoresists on different substrates","authors":"Si Li, Joyce A. Lowes, Ruimeng Zhang, M. Luo, Kelsey E. Brakensiek, V. V. Driessche, D. Guerrero","doi":"10.1117/12.2658529","DOIUrl":"https://doi.org/10.1117/12.2658529","url":null,"abstract":"In EUV lithography, good resist patterning requires an assist layer beneath it to provide adhesion to prevent pattern collapse of small features and allow for higher aspect ratios. In addition, future EUV high numerical aperture (NA) is expected to require a decrease in thickness from the overall patterning stack. In this study, we are exploring a fundamentally new approach to developing an alternative and cost-effective underlayer to functionalize surfaces and enable EUV patterning. Rather than forming a 5-nm polymer film between the resist and its substrate, we propose to modify the substrate by spin-coating a thinner layer. In contrast to conventional underlayers (5–10 nm), the substrate is modified by a sub-1-nm layer during baking. Comprehensive analysis of the surface modification and coating was conducted by GPC, ellipsometer, and contact angle to identify the structure, stability, coating quality, and surface energy. Lithographic performance of existing EUV resist with the assist of this thin layer on Si wafers and different silicon hardmasks was evaluated using NXE3400 EUV exposure system to print HP14nm line-space features. It has been demonstrated that this sub-1-nm layer is able to realize HP14nm with a wider process window, higher depth of focus, and lower LWR on a Si wafer. Moreover, a silicon hardmask that could not realize printable features had significantly improved lithographic performance with the assist of this layer. Comparisons were also made with the industry-standard HMDS priming. Systematic analysis indicates that a sub-1-nm layer exemplifies a novel and effective way to enhance photoresist-substrate compatibility and improve EUV lithographic performance.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126036485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The damage control of sub layer while ion-driven etching with vertical carbon profile implemented 实现了垂直碳轮廓离子驱动刻蚀时子层的损伤控制

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2657249

Seungjin Mun, Lina Yoo, Jongdeok Hong, J. Ahn, Kyung-yub Jeon, Ke Bai

引用次数: 0

A scientific framework for establishing ultrafast molecular dynamic research in imec’s AttoLab 在imec的AttoLab建立超快分子动力学研究的科学框架

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2660047

L. Galleni, Faegheh S. Sajjadian, T. Conard, I. Pollentier, K. Dorney, F. Holzmeier, E. Larsen, Daniel Escudero, G. Pourtois, M. V. van Setten, Paul A. W. van der Heide, J. Petersen

{"title":"A scientific framework for establishing ultrafast molecular dynamic research in imec’s AttoLab","authors":"L. Galleni, Faegheh S. Sajjadian, T. Conard, I. Pollentier, K. Dorney, F. Holzmeier, E. Larsen, Daniel Escudero, G. Pourtois, M. V. van Setten, Paul A. W. van der Heide, J. Petersen","doi":"10.1117/12.2660047","DOIUrl":"https://doi.org/10.1117/12.2660047","url":null,"abstract":"Science stands on three legs: hypothesis, experiment, and simulation. This holds true for researching extreme ultraviolet (EUV) exposure of photoresist. Hypothesis: For resist exposure as patterns get smaller and closer together, approaching molecular units in width and resist-height, the molecular dynamics will limit the working resolution of the resist due to the formation of printing defects. Without taking proper consideration of these dynamics, the single-patterning lithography roadmap may end prematurely. Experimentally we are developing methods for sub-picosecond tracking of photoionization-induced processes. Using ultrashort pulses of light to excite and probe new materials with techniques that show the interactive dynamics of electronic and nuclear motion at the very limits of light-speed. This certainly holds true for exposing photoresists with EUV where ultrafast photoreactions induce chemical change via multiple pathways such as high-energy ionization fragmentation, recombination, and multispecies combination that ideally end in low-energy electron transfer reactions, analogous to lower energy photoreaction (but with a charge). In the nonideal case, these reaction processes lead to incompatible byproducts of the radiolysis that lead to types of stochastic defects. To do ultrafast studies we must build a foundation of knowledge using atomistic simulation to interpret transient molecular dynamic processes. Before we can do this, we need to learn how to simulate various spectral modalities to provide a starting point. In this work, we examine X-ray Photoelectron Spectroscopy of a model resist and use atomistic simulation to interpret the reactant-product composition of the spectral samples.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121006220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin speed impact on photoresist thin film properties and EUV lithographic performance 旋转速度对光刻胶薄膜性能和极紫外光刻性能的影响

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2659101

Yinjie Cen, Choong-Sun Lee, Li Cui, S. Coley, J. Park, Benjamin D. Naab-Rafael, E. Aqad, Rochelle Rena, Tyler R Paul, Thomas Penniman, Jason Behnke, Julia T Early, Benjamin Foltz

引用次数: 0

Fabrication of dual damascene structure with nanoimprint lithography and dry-etching 用纳米压印和干法蚀刻制备双大马士革结构

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2657912

N. Takeuchi, Genna Hasegawa, T. Komukai, T. Iwasaki, M. Hatano, M. Komori, T. Kono

引用次数: 0

A novel approach to etch-process-aware intensive layout retarget 一种蚀刻工艺感知密集布局重定位的新方法

Advanced Lithography Pub Date : 2023-05-01 DOI: 10.1117/12.2657880

Jeeyong Lee, Yangwoo Heo, Ryanggeun Lee, Sangwook Kim, Jisuk Hong, K. Koo, Chang-Yeol Yim, Jungmin Kim, Sooyong Lee, Joonsung Kim, Dongho Kim, Seung-Hune Yang, Seongtae Jeong

{"title":"A novel approach to etch-process-aware intensive layout retarget","authors":"Jeeyong Lee, Yangwoo Heo, Ryanggeun Lee, Sangwook Kim, Jisuk Hong, K. Koo, Chang-Yeol Yim, Jungmin Kim, Sooyong Lee, Joonsung Kim, Dongho Kim, Seung-Hune Yang, Seongtae Jeong","doi":"10.1117/12.2657880","DOIUrl":"https://doi.org/10.1117/12.2657880","url":null,"abstract":"Patterning, a major process in semiconductor manufacturing, aims to transfer the design layout to the wafer. Accordingly, the \"process proximity correction\" method was developed to overcome the difference in after-cleaninginspected CD (critical dimension) between patterns of similar shapes. However, its physical model is often limited in the predictive performance. Therefore, recent studies have introduced ML (machine learning) technology to supplement model accuracy, but this approach often has an inherent risk of overfitting depending on the type of sampled pattern. In this study, we present a newly invented flow capable of stable etch-process-aware ML modeling by model reconstruction and large amounts of measurement data. The new modeling flow can also be performed within a reasonable runtime through efficient feature extraction. Based on the new model and its related layout targeting platform, intensive improvements were made to CD targeting and spread; for a given layout, in comparison with delicate rule-based modification, the CD targeting accuracy was improved by 4 times and approaches the limit of metrology error.","PeriodicalId":212235,"journal":{"name":"Advanced Lithography","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129359464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0