壳聚糖作为用于 DUV 光刻技术的水基光刻胶

I. Servin, Alexandre Téolis, A. Bazin, A. Sarrazin, Paule Durin, O. Sysova, Corinne Gablin, Benoît Saudet, D. Léonard, O. Soppera, J. Leclercq, Y. Chevolot, R. Tiron, T. Delair, S. Trombotto
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引用次数: 0

摘要

DUV光刻作为纳米制造的主要工艺,通常需要在抗蚀剂配方、溶剂和显影剂中使用大量有毒化学物质。在这种情况下,人们提出了替代目前石油衍生光抗剂的化学物质,以减少对环境的影响。壳聚糖代表了一种生物源抗蚀剂,通过使用绿色溶剂(去离子水)代替,可以使水基图案加工不需要有机溶剂和碱基显影剂。本文介绍了利用壳聚糖基抗蚀剂进行图案集成的最后一步工艺。在CEA-Leti上使用300毫米中试线刻度的初步结果表明,图案分辨率低至800纳米,等离子体蚀刻转移到Si衬底上。最后,通过生命周期分析(LCA)对壳聚糖抗蚀剂全工艺的环境影响进行了评价,并与传统溶剂基工艺进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Chitosan as a water-based photoresist for DUV lithography
DUV photolithography, as the major process of nanofabrication, typically requires high volumes of toxic chemicals within resist formulation, solvent and developer. In this context, alternative chemistries to current petroleum-derived photoresists are proposed to reduce environmental impacts. Chitosan represents a bio-sourced resist allowing water-based patterning processes free of organic solvent and alkali-based developers, by substitution with a green solvent (deionized (DI) water). This paper present last stepwise process in the patterning integration with a chitosan-based resist. Preliminary results using a 300 mm pilot line scale at CEA-Leti demonstrate patterns resolution down to 800 nm along with plasma etch transfer into Si substrate. Finally, the environmental impact through life cycle analysis (LCA) of the whole process based on chitosan resist is assessed and compared to conventional solvent-based processes.
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