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2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)最新文献

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Qualitative study of a new circuit model of small-signal amplifier using Sziklai pair in compound configuration 采用复合结构的Sziklai对的小信号放大器新电路模型的定性研究
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417209
S. Shukla, Beena Pandey, Susmrita Srivastava
{"title":"Qualitative study of a new circuit model of small-signal amplifier using Sziklai pair in compound configuration","authors":"S. Shukla, Beena Pandey, Susmrita Srivastava","doi":"10.1109/SMELEC.2012.6417209","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417209","url":null,"abstract":"A new circuit model of small-signal wide-band voltage amplifier using Sziklai pair is proposed for the first time. The proposed amplifier circuit uses two PNP and one NPN transistors and two additional biasing resistances in its configuration. The upper half of the triple transistor system with transistors Q1 and Q2 constitute a Sziklai pair while the lower half with Q2 and Q3 forms complementary Sziklai pair. The over-all performance of the proposed amplifier circuit is found to be superior than conventional or modified small-signal Darlington and Sziklai pair amplifiers and as a rare feature the proposed circuit simultaneously produces high voltage gain and wide bandwidth. Poor response of small-signal Darlington pair amplifiers at higher frequencies and narrow bandwidth problem of small-signal Sziklai pair amplifier is found to be absent in the proposed amplifier. Variations in voltage gain as a function of frequency and different biasing resistances, bandwidth and total harmonic distortion of the amplifier is also pursued. Proposed amplifier may be useful for various analog communication applications.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128110465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A ΔΣ modulator with 3-Bit, 37-level pre-detective dynamic quantization 一个ΔΣ调制器与3位，37级预检测动态量化
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417211
Chien-Hung Kuo, Kuan Wang
{"title":"A ΔΣ modulator with 3-Bit, 37-level pre-detective dynamic quantization","authors":"Chien-Hung Kuo, Kuan Wang","doi":"10.1109/SMELEC.2012.6417211","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417211","url":null,"abstract":"In this paper, a high-resolution delta-sigma modulator with a pre-detective dynamic quantizer is proposed. A 37-level quantization can be achieved by using only a 3-bit quantizer in the proposed dynamic quantizer. In the proposed structure, a signal detector is added at the input of the presented modulator to pre-detect the magnitude of the sampled input and switch the dynamic quantizer to the corresponding quantization range. With the proposed technique, the quantization level can be greatly increased, and the number of comparators will hence be substantially reduced for a high-level quantization. The resulting resolution of delta-sigma modulators can thus be significantly promoted without consuming much power and area. The proposed delta-sigma modulator is implemented in a TSMC 0.18-μm 1P6M CMOS process. The signal-to-noise plus distortion ratio is 101.2 dB in a signal band of 25 kHz. The power consumption is 1.68 mW at a 1.8 V supply voltage.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134447475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural study and sensitivity measurements of ZnO based ammonia (NH3) sensor 氧化锌氨(NH3)传感器的结构研究及灵敏度测量
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417235
S. Ahmad, N. Sin, M. H. Mamat, M. Salina, M. Berhan, M. Rusop
{"title":"Structural study and sensitivity measurements of ZnO based ammonia (NH3) sensor","authors":"S. Ahmad, N. Sin, M. H. Mamat, M. Salina, M. Berhan, M. Rusop","doi":"10.1109/SMELEC.2012.6417235","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417235","url":null,"abstract":"Zinc Oxide (ZnO) thin films were prepared on thermally oxidized SiO2 by radio frequency (RF) magnetron sputtering at various substrate temperature ranging from room temperature (25°C) to 500°C. The surface morphology and crystallinity were analyzed by field emission scanning electron microscopy (FESEM) and X-Ray Diffractometer (XRD) respectively. The grain size measured by FESEM is increasing with the increased of substrate temperature used. All films grown were c-axis oriented and the film deposited at 300°C exhibit the highest crystallinity. The film deposited at room temperature exhibit the highest sensitivity due the smallest grain size and the highest surface to volume ratio.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131224989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of biomimetic flow sensor based fish dome shaped cupula using PDMS for underwater sensing 基于PDMS的鱼圆丘形仿生流量传感器水下传感建模
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417130
M. Nawi, A. A. Manaf, M. Arshad, O. Sidek
{"title":"Modeling of biomimetic flow sensor based fish dome shaped cupula using PDMS for underwater sensing","authors":"M. Nawi, A. A. Manaf, M. Arshad, O. Sidek","doi":"10.1109/SMELEC.2012.6417130","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417130","url":null,"abstract":"This paper presents the initial modeling on the biomimetic flow sensor based fish dome-shaped cupula for underwater sensing. Fish depend on this cupula to monitor the flow fields especially for maneuvering and survival underwater. We proposed the design structure and the principle of sensing using microchannel which is consist of liquid and electrolyte. PDMS material was chosen because it is easy to deform and soft. By using a computational fluid dynamic and finite element method, the optimal performance was obtained by optimizing the geometrical dimension of the radius and thickness of the dome. The sensor performance is measured on the basis of displacement and strain. The sensitivity of the sensor has been investigated by using different radius and thickness of the dome. Dome with a radius of 0.2mm until 1.2mm was chosen for this study. The resulting in a maximum displacement is 0.27μm and the strain is 3.98E-4 for a flow rate of 1m/s. Simulation results show that the sensitivity of the dome is a maximum when the radius of the dome at the maximum and the thickness of the dome at the minimum.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131233701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design and characterization of bandgap voltage reference 带隙电压基准的设计与表征
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417236
Y. Yusoff, Hanif Che Lah, N. Razali, Siti Noor Harun, T. Yew
{"title":"Design and characterization of bandgap voltage reference","authors":"Y. Yusoff, Hanif Che Lah, N. Razali, Siti Noor Harun, T. Yew","doi":"10.1109/SMELEC.2012.6417236","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417236","url":null,"abstract":"This paper presents the design and characterization of 1.8V bandgap voltage reference fabricated using Siltera's 0.18um CMOS process technology. The proposed bandgap voltage reference employed two-stage amplifier, start-up and power down circuit. The paper focuses on circuit analysis using SPECTRE and Monte Carlo, layout design technique for reducing mismatch and silicon characterization. The result shows the designed bandgap voltage reference generates a stable voltage reference at 1.204V with average temperature coefficient of 6.5ppm/oC. The power dissipation for this bandgap voltage reference is 150uW under 1.8V supply voltage and it occupies silicon area of 370um×300um.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130977690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Tunable loop filter in fractional-N frequency synthesizer for wireless applications 用于无线应用的分数n频率合成器中的可调谐环路滤波器
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417225
Gan Leong Kit, F. A. Hamid, S. K. Ahmed
{"title":"Tunable loop filter in fractional-N frequency synthesizer for wireless applications","authors":"Gan Leong Kit, F. A. Hamid, S. K. Ahmed","doi":"10.1109/SMELEC.2012.6417225","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417225","url":null,"abstract":"A tunable loop filter in fractional-N frequency synthesizer is proposed and analyzed. The proposed concept allows designer to fine tune the loop bandwidth based on current injection into the loop filter. Fine tuning feature can be achieved with the utilization of a voltage-controlled transconductance component. The analysis and simulation results are presented for this technique. It shows that the frequency synthesizer employing the proposed tunable loop filter allows designer to have a fine control on the loop bandwidth and lock time of the system.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133499129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Failure analysis case studies on open defect 开放式缺陷失效分析案例研究
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417194
G. Song, Chunlei Wu, J. Yu, Gaojie Wen, W. Wang
{"title":"Failure analysis case studies on open defect","authors":"G. Song, Chunlei Wu, J. Yu, Gaojie Wen, W. Wang","doi":"10.1109/SMELEC.2012.6417194","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417194","url":null,"abstract":"Failure analysis (FA) plays an important role in the integrated circuit industry. In FA cases, leakage and open are two main types of electrical faults. Optical beam induced resistance change (OBIRCH) technique is a very effective method in locating the leakage related defects or at least pointing out the abnormal leakage current path. But for open related defects, it seems that there is no common and effective method which can identify and locate the defect. In this paper, several open defect related failure analysis cases are presented. Some typical electrical and physical signatures of open fault and some analysis methods are discussed.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128828847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Induced mass change technique for glucose detection in microcantilever-based sensors 微悬臂梁传感器中葡萄糖检测的诱导质量变化技术
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417155
M. Nor, B. Bais, N. A. Aziz, R. A. Rahim, B. Majlis
{"title":"Induced mass change technique for glucose detection in microcantilever-based sensors","authors":"M. Nor, B. Bais, N. A. Aziz, R. A. Rahim, B. Majlis","doi":"10.1109/SMELEC.2012.6417155","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417155","url":null,"abstract":"Microcantilever-based glucose sensor is a state-of-art sensor that has been widely investigated for biosensing applications. This work focuses on the preliminary study of correlation of the glucose reaction and the induced force on the microcantilever sensor by measuring the induced mass changes due to the glucose reaction. The induced force is then used to test the fabricated microcantilever sensor for glucose detection. Gold-coated glass slides were used as the immobilization sites for glucose oxidase enzyme. The reaction of the glucose oxidase enzyme and ß-D glucose was observed by injecting 5 mM glucose solution on 0.3 mL immobilized enzyme on three samples. The resulted mass changes, ranging from 151.87 mg to 180. 14 mg for the three samples, indicate a good correlation between the enzyme-glucose reaction and the induced mass change. The induced forces of 0.28 μN to 0.29 μN, converted from the mass changes of the glucose-enzyme reaction, is in a range of interactive force values commonly found in biochemical detection applications.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114448537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulated annealing Vs. Genetic Simulated Annealing for automatic transistor sizing 模拟退火与遗传模拟退火的自动晶体管尺寸
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417190
N. Singh, B. Ghosh
{"title":"Simulated annealing Vs. Genetic Simulated Annealing for automatic transistor sizing","authors":"N. Singh, B. Ghosh","doi":"10.1109/SMELEC.2012.6417190","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417190","url":null,"abstract":"Transistor size optimization is an important aspect of circuit design. Small and non-complex circuits can be designed easily using manual calculations and circuit simulations. But, as the complexity of circuits increases, manual design becomes too difficult and time consuming. Therefore, tools and techniques for automatic transistor sizing are of great importance in the area of circuit design. The goal of this paper is to implement Genetic Simulated Annealing algorithm as a tool for transistor sizing, and compare its performance with Simulated Annealing, one of the most popular optimization algorithm in use today. The algorithms have been tested on four different digital circuits and the results collated and compared in this paper.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114594811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of PMMA concentration on PMMA-based organic capacitor behavior PMMA浓度对PMMA基有机电容器性能的影响
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417092
L. N. Ismail, M. Khairizal, Z. Habibah, A. Arshad, M. Wahid, N. N. Hafizah, S. H. Herman, M. Rusop
{"title":"Effects of PMMA concentration on PMMA-based organic capacitor behavior","authors":"L. N. Ismail, M. Khairizal, Z. Habibah, A. Arshad, M. Wahid, N. N. Hafizah, S. H. Herman, M. Rusop","doi":"10.1109/SMELEC.2012.6417092","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417092","url":null,"abstract":"This paper reports the behavior of poly (methyl methacrylate) (PMMA) as insulator films. The PMMA concentrations were from 0.3, 0.6, 0.9 to 1.2 g. The electrical and dielectric properties results showed that PMMA concentration influenced the insulator behavior in the capacitor. The resistivity increased and the leakage current reduced from 10-2 A/cm2 to 10-7 A/cm2 when the PMMA concentrations were increased.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123978853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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