Design and characterization of bandgap voltage reference

Abstract

This paper presents the design and characterization of 1.8V bandgap voltage reference fabricated using Siltera's 0.18um CMOS process technology. The proposed bandgap voltage reference employed two-stage amplifier, start-up and power down circuit. The paper focuses on circuit analysis using SPECTRE and Monte Carlo, layout design technique for reducing mismatch and silicon characterization. The result shows the designed bandgap voltage reference generates a stable voltage reference at 1.204V with average temperature coefficient of 6.5ppm/oC. The power dissipation for this bandgap voltage reference is 150uW under 1.8V supply voltage and it occupies silicon area of 370um×300um.