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2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)最新文献

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Surface defect on SiC ohmic contact during thermal annealing 热处理过程中碳化硅欧姆接触表面缺陷
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417249
I. Abdullah, A. Jalar, M. A. Hamid, I. Mansor, B. Majlis
{"title":"Surface defect on SiC ohmic contact during thermal annealing","authors":"I. Abdullah, A. Jalar, M. A. Hamid, I. Mansor, B. Majlis","doi":"10.1109/SMELEC.2012.6417249","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417249","url":null,"abstract":"Capability and reliability of Silicon Carbide (SiC) material for semiconductor power devices are influence by surface defects. 4H-SiC have been measured to investigate the surface defect on 4H-SiC epitaxial in order to obtain the defects information related to electrical performances. Ohmic contact was prepared using Aluminium and Platinum with thickness 90 nm and 150 nm respectively and annealed at 400 °C at three various time. Surface morphology was observed using both surface profile technique and Scanning Electron Microscope (SEM) prior to ohmic deposition surface. The mapping defect studies of 4H-SiC surface have revealed that the large area of micropipes and shallow pit will exposed defects exist.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115314633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Accessing AHB bus using WISHBONE master in SoC design 在SoC设计中使用WISHBONE master访问AHB总线
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417224
M. K. A. Rani, M. Khalid
{"title":"Accessing AHB bus using WISHBONE master in SoC design","authors":"M. K. A. Rani, M. Khalid","doi":"10.1109/SMELEC.2012.6417224","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417224","url":null,"abstract":"An IP (Intellectual Property) based SoC (System-on-Chips) is getting popular among designers as it allows for a faster development cycle for SoC production. However, each IP may use different bus interface causing compatibility issues during design integration. A WISHBONE bus and an AHB (Advanced High Performance Bus) are among commonly used bus interfaces for many IP cores. This paper describes the conversion operation from WISHBONE Bus protocol into an AHB bus protocol. This is to allow an Open RISC Micro Controller Unit (ORMCU), a master device which uses WISHBONE bus protocols, to communicate and control all other devices (slaves) that use AHB bus protocols. The design is a WISHBONE-to-AHB Bridge, which consist of a WISHBONE slave and an AHB master inside one module. The simulation results confirm that the bridge is able to handle communication from a WISHBONE master in an AHB system.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"35 26","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120821434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Electrical properties of ZnO/TiO2 nanocomposite film deposited by simultaneous Radio-Frequency Magnetron sputtering 射频磁控溅射法制备ZnO/TiO2纳米复合薄膜的电学性能
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417096
I. Saurdi, M. H. Mamat, M. H. Abdullah, M. Musa, M. Rusop
{"title":"Electrical properties of ZnO/TiO2 nanocomposite film deposited by simultaneous Radio-Frequency Magnetron sputtering","authors":"I. Saurdi, M. H. Mamat, M. H. Abdullah, M. Musa, M. Rusop","doi":"10.1109/SMELEC.2012.6417096","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417096","url":null,"abstract":"In this work, the ZnO/TiO2 nanocomposite thin films were prepared by simultaneous Radio-Frequency Magnetron sputtering of ZnO and TiO2 targets on glass substrates at different deposition times in the range of 30-75 minutes that increases the film thickness. The electrical and surface morphology were characterized by I-V measurement and atomic force microscopy (AFM) measurement respectively. The electrical characteristics indicate that the conductivity increases as the thickness increase due to the improvement in surface contact between particles and photocatalytic activity. High conductivity at 1.67×10-4 S/cm and lowest resistivity about 5.14×104 Ω/cm have been obtained for 75 minutes deposition time. Atomic force microscopy (AFM) showed particle size of ZnO/TIO2 thin films increases from 26nm to 50nm with an increasing in deposition time.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115025091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of incorporating dielectric pocket (DP) on Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS-DP) 垂直应变-冲击电离MOSFET (VESIMOS-DP)中加入介电袋(DP)的研究
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417134
I. Saad, H. M. Zuhir, D. Pogaku, A. R. A. Bakar, N. Bolong, A. M. Khairul, B. Ghosh, R. Ismail, U. Hashim
{"title":"Investigation of incorporating dielectric pocket (DP) on Vertical Strained-SiGe Impact Ionization MOSFET (VESIMOS-DP)","authors":"I. Saad, H. M. Zuhir, D. Pogaku, A. R. A. Bakar, N. Bolong, A. M. Khairul, B. Ghosh, R. Ismail, U. Hashim","doi":"10.1109/SMELEC.2012.6417134","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417134","url":null,"abstract":"The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. Due to the DP layer, improve stability of threshold voltage, VT was found for VESIMOS-DP device of various DP size ranging from 20nm to 80nm. The stability is due to the reducing charge sharing effects between source and drain region. However, the presence of DP layer has introduced another potential barrier in addition to δp+ triangular potential barrier. Thus, increased amount of gate source voltage for lowering both barriers and allows the electron to move from source to drain. Accordingly, slight different and consistency of VESIMOS-DP sub-threshold value as compared to VESIMOS has revealed to give advantages for incorporating DP layer near the drain end. Moreover, the DP layer has suppressed the parasitic bipolar transistor effect with higher breakdown voltage as compared to without DP layer.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122719925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Analysis of a MEMS piezoelectric microgenerator using network placement method 基于网络布局的MEMS压电微型发电机分析
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417078
L. Taha, B. Majlis, Ahmad Al Ali
{"title":"Analysis of a MEMS piezoelectric microgenerator using network placement method","authors":"L. Taha, B. Majlis, Ahmad Al Ali","doi":"10.1109/SMELEC.2012.6417078","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417078","url":null,"abstract":"This paper presents a new approach for analyzing a MEMS piezoelectric microgenerator based on the network placement method. First, new piezoelectric model is proposed by modifying the device model using its equivalent closed loop transfer function. The network placement method is then used to vary the microgenerator poles and zeros thus altering the generated voltage and power. The new model can be used to calculate the load that produces certain transient parameters. The model is simulated by applying a pulse force of 1 N amplitude and 1.2 ms width. A considerable improvement on the average voltage and apparent power curves is recorded by placing a Wein Bridge passive network having R = 278.2 MΩ and C = 1 nF. The optimum voltage and power are 3.8 V and 8.8 μVA, respectively.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114428602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Failure mechanism and improvement on gate oxide failure at the edge of LOCOS LOCOS边缘栅氧化层失效机理及改进
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417214
L. W. Y. Ying, D. K. Pal, R. Tan, N. H. Seng, M. Ong, T. Hong, Wong Jian Sang
{"title":"Failure mechanism and improvement on gate oxide failure at the edge of LOCOS","authors":"L. W. Y. Ying, D. K. Pal, R. Tan, N. H. Seng, M. Ong, T. Hong, Wong Jian Sang","doi":"10.1109/SMELEC.2012.6417214","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417214","url":null,"abstract":"Gate oxide early breakdown was investigated. It was verified that the gate oxide quality is good and failure was due to extrinsic causes. The failure, which was localized at the edge of LOCOS was similar to Kooi effect. However, investigations showed that it was due to nitridation occured during high temperature nitrogen anneal. Investigation methods to find the root cause of failure were explained. Alternative methods to solve the failure were explored; including thickening the sacrificial oxide layer and changing the nitrogen anneal process sequence. Final solution was chosen based on PCM stress test, QBD and TDDB result with minimal process change.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128997204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optimization of cantilever-based MEMS switch 悬臂式MEMS开关的优化
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417116
M. Vakilian, M. Mousavi, B. Bais, B. Majlis
{"title":"Optimization of cantilever-based MEMS switch","authors":"M. Vakilian, M. Mousavi, B. Bais, B. Majlis","doi":"10.1109/SMELEC.2012.6417116","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417116","url":null,"abstract":"In this paper, RF MEMS switches were studied. One of the applications of RF MEMS switches is in the reconfigurable antenna where it is used to replace the traditional switches such as FET and PIN switches. Among the RF MEMS switches, the cantilever-based MEMS switch is the most popular for its low cost and ease of the fabrication process. The 3D builder and Thermo-Electro-Mechanical (TEM) modules of the IntelliSuite software were used for the simulation of the cantilever-based MEMS switch. The effect of materials and beam geometry of the switch on the pull in voltage and the operating frequency were discussed. The simulation results showed that there is a trade-off between the pull in voltage and the operating frequency for optimizing the cantilever-based MEMS switch.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130412767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
On the waves in circular waveguides containing chiral nihility metamaterial under PMC boundary PMC边界下含手性虚无超材料圆波导中的波
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417169
M. A. Baqir, P. Choudhury
{"title":"On the waves in circular waveguides containing chiral nihility metamaterial under PMC boundary","authors":"M. A. Baqir, P. Choudhury","doi":"10.1109/SMELEC.2012.6417169","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417169","url":null,"abstract":"Analytical investigation has been presented of the propagation of electromagnetic waves in a circular optical waveguide containing chiral nihility metamaterial. The waveguide under consideration has the inner region as free-space and the outer region as the chiral nihility metamaterial. The outer region of guide is coated with perfect magnetic conductor (PMC). It has been found that no net magnetic field exists in the chiral nihility region of the guide whereas the same exists in non-nihility (i.e. the free-space) region. The expressions corresponding to fields and power have been derived with the emphasis on the power pattern corresponding to the excitation of transverse electric modes in the guide.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130586983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Physical characteristic of room-temperature deposited Ti thin films by RF magnetron sputtering at different RF power 不同射频功率下室温磁控溅射沉积Ti薄膜的物理特性
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417152
Z. Aznilinda, S. H. Herman, R. A. Bakar, M. Rusop
{"title":"Physical characteristic of room-temperature deposited Ti thin films by RF magnetron sputtering at different RF power","authors":"Z. Aznilinda, S. H. Herman, R. A. Bakar, M. Rusop","doi":"10.1109/SMELEC.2012.6417152","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417152","url":null,"abstract":"Ti thin films of various thicknesses were grown on glass substrates by using RF magnetron sputtering technique with sputtering power varied from 50W to 300W. The thickness of the thin films are measured using surface profiler KLA Tencor P-6 and it is observed that the thickness increased as the sputter power increased. Sputtering rate increases form 1.59nm/min to 8.77nm/min as the sputter power increases from 50W to 300W. Atomic force microscopy (AFM) was used to study the surface roughness and surface topography of the Ti thin films. The surface roughness is also proportional to the sputter RF power. FESEM analysis revealed that the particle size transform from dense agglomeration particle to bigger particle size with voids in between as the increase of RF power. The growth of the Ti on glass is in columnar structure and the RF power place a big role in order to modify a structure of a Ti thin film.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123343169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Analysis of energy harvesters for powering a wireless sensor node device 为无线传感器节点设备供电的能量采集器分析
2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417257
A. B. Jambek, Choo Pey See, U. Hashim
{"title":"Analysis of energy harvesters for powering a wireless sensor node device","authors":"A. B. Jambek, Choo Pey See, U. Hashim","doi":"10.1109/SMELEC.2012.6417257","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417257","url":null,"abstract":"This study analyses energy harvesters used to power a wireless sensor node. The sensor node measures the ambient temperature and transmits the data to a coordinator. Three main energy sources are investigated: solar, radio frequency and thermal. The energy produced by these devices is investigated under various environmental conditions to ensure that it can reliably supply the required amount of power to the wireless sensor node. The results show that these energy sources can provide power to the wireless sensor node at different transmission rates with an average power of 0.16 W during each data transmission.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128088277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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