2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)最新文献_第3页

Scaling down of the 32 nm to 22 nm gate length NMOS transistor 将32纳米栅极长度的NMOS晶体管缩小到22纳米

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417117

A. Maheran, P. Menon, Ibrahim Ahmad, H. A. Elgomati, B. Majlis, F. Salehuddin

引用次数: 13

The role of Reactive Ion Etching(RIE) on wirebond formation: A study on successful rate of thermosonic gold wire on aluminium bondpad 反应离子蚀刻(RIE)在线键形成中的作用:铝键垫上热超声金线成功率的研究

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417148

Z. Sauli, V. Retnasamy, N. Rahman, M. Aziz, H. A. Razak, M. Palianysamy

引用次数: 2

Charge collection efficiency measurement system based on Field Programmable Gate Array multipurpose card 基于现场可编程门阵列多用途卡的收费效率测量系统

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417215

N. Saad, I. Mansor, M. A. Hamid, A. Jalar, R. Shamsudin

引用次数: 1

The design of DC motor driver for solar tracking applications 太阳能跟踪用直流电机驱动器的设计

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417207

Lam Zi-Yi, Wong Sew-Kin, Pang Wai-Leong, Ooi Chee-Pun

{"title":"The design of DC motor driver for solar tracking applications","authors":"Lam Zi-Yi, Wong Sew-Kin, Pang Wai-Leong, Ooi Chee-Pun","doi":"10.1109/SMELEC.2012.6417207","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417207","url":null,"abstract":"Solar trackers rely on a direct-current (DC) motor driver circuit to control the movement of the solar panel. However, conventional DC motor drivers used in solar tracking system do not provide any options for speed and torque control. Hence, the fixed speed of the DC motor leads to either too fast or too slow tracking movement. Usually, the output torque is set to the maximum. If the load (solar panels' weight) is small, the maximum torque is not fully utilized and therefore energy is wasted. So, a fully adjustable DC motor driver for solar tracking system shows great potential in commercialization because highly energy efficient DC motor driver circuit can improves the total efficiency of the solar tracker. Fewer solar panels are needed when they are attached to high efficiency solar tracking system, which will be reflected to lower system cost. Therefore, this enhanced motor driver will bring significant impact to the solar energy industry. The proposed DC motor driver is fully adjustable in term of speed and torque. The speed and torque of the motor is directly proportional to the output voltage and output current of the proposed DC motor driver, respectively. Adaptive controlling of the output voltage and current are possible by installing algorithm in the microcontroller of the DC motor driver and it can be reprogrammed according to the requirement. The speed control makes the solar tracking system to track the Sun more accurately and the torque control saves energy.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121300621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 17

Infrared emissivity of Co, Ni Co-doped ZnO powders by solid-state reaction Co, Ni共掺杂ZnO粉体固相反应的红外发射率

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417087

Yin-hua Yao, Quan-xi Cao

引用次数: 0

Magnetic force on a magnetic bead 磁珠上的磁力

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417141

A. Bahadorimehr, J. Alvankarian, B. Majlis

引用次数: 2

Capacitor-grounded electronically tunable voltage-mode OTA-C multifunction filter with three inputs and five outputs 电容接地电子可调谐电压模式OTA-C多功能滤波器，具有三个输入和五个输出

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417200

M. Kumngern, K. Dejhan

引用次数: 3

Development of microstructure on polysilicon substrate by reactive ion etching (RIE) for future reproductivity of nanogap 反应离子刻蚀(RIE)技术在多晶硅衬底上的微结构研究及其对纳米间隙再生性能的影响

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417258

Q. Humayun, U. Hashim

{"title":"Development of microstructure on polysilicon substrate by reactive ion etching (RIE) for future reproductivity of nanogap","authors":"Q. Humayun, U. Hashim","doi":"10.1109/SMELEC.2012.6417258","DOIUrl":"https://doi.org/10.1109/SMELEC.2012.6417258","url":null,"abstract":"This article is a study about dry etching as applied to etch substrate directionality, which is the important feature of RIE. The biosensors based on polysilicon material should be sensitive and selective for the detection of bio molecule. The objective of this research is to design, and fabricate polysilicon microstructure. The proposed microstructure was designed initially by using AutoCAD software and then transferred to commercial chrome mask. Standard CMOS photolithography process coupled with RIE dry etching is used for fabrication of proposed microstructure. The fabrication process start by microstructure formation on resist and than by reactive ion etching (RIE) the proposed polysilicon microstructure was created onto samples wafer. Future work will focuse to reduce the microstructure width and finally break the microstructure to create nanogap by size reduction technique using thermal oxidation. For biomolecules sensing applications, the size of the gap must be small enough to allow the biomolecule inserted into the gap space to connect both leads to keep the molecules in a relaxed and undistorted state.","PeriodicalId":210558,"journal":{"name":"2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121713344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Fabrication of AlGaN/GaN HEMTs with slant field plates by using deep-UV lithography 用深紫外光刻技术制备斜场板AlGaN/GaN hemt

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417250

T. Hsieh, Lu-Che Huang, Yueh-Chin Lin, Chia‐Hua Chang, Huan-Chung Wang, E. Chang

引用次数: 0

The effect of exposure time and development time on photoresist thin film in Micro/Nano structure formation 曝光时间和显影时间对光刻胶薄膜微纳结构形成的影响

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2012-09-01 DOI: 10.1109/SMELEC.2012.6417102

T. Adam, U. Hashim

引用次数: 9