{"title":"50-GHz Interconnect Design in Standard Silicon Technology","authors":"B. Kleveland, T. H. Lee, S.S. Wong","doi":"10.1109/ARFTG.1998.327295","DOIUrl":"https://doi.org/10.1109/ARFTG.1998.327295","url":null,"abstract":"Coplanar waveguides were fabricated in a process that emulates silicon CMOS technologies with 5 to 10 metal layers. The observed S21 loss of 0.3dB/mm at 50 GHz is among the lowest ever reported with standard Al interconnects on Si/SiO2. Optimum design parameters were counter-intuitive: in some frequency ranges, the lowest loss was achieved with relatively narrow lines over a low-resistivity substrate. This was exploited in the design of transmission lines that are fully compatible with a CMOS technology. The process emulation was calibrated with a commercial 4-layer Al/Cu CMOS technology.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122452543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Miniature P-Code GPS Translator","authors":"J. Smuk, P. Blount, C. Trantanella, M. Shifrin","doi":"10.1109/ARFTG.1998.327290","DOIUrl":"https://doi.org/10.1109/ARFTG.1998.327290","url":null,"abstract":"A GaAs MMIC chip set and its integration into a P-code GPS translator for use in tracking high speed objects is presented. The translator provides over 125dB of transmission gain with 3.5dB noise figure, occupies 18 cm3, survives 16,000G mechanical shock and operates from -40 °C to 85 °C.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123464437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Comparison of SOLR and TRL Calibrations","authors":"D. Walker, Dylan F. Williams","doi":"10.1109/ARFTG.1998.327283","DOIUrl":"https://doi.org/10.1109/ARFTG.1998.327283","url":null,"abstract":"We examine a short-open-load-reciprocal scattering parameter calibration in both in-line and orthogonal probe configurations. We explore its standard definitions and verify its accuracy by comparing it to a multiline thru-reflect-line calibration.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122491092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Advanced TRL (Through-Reflect-Line) Fixture Design and Error Analyses for RF High Power Transistor Characterization and Automatic Load Pull Measurement","authors":"C. Shih","doi":"10.1109/ARFTG.1998.327281","DOIUrl":"https://doi.org/10.1109/ARFTG.1998.327281","url":null,"abstract":"This article discussed the design methodology of the low impedance TRL fixture and a detailed error analysis of the commercial computer controlled load pull system. Especially, an associated advanced TRL calibration software routine has been created to resolve the difficulty of non-50 Ohm calibration used by the vector network analyzer. Since this technique is regardless of the termination impedance, the probing port can always be designed to comply with the same dimension as the measured port. Because this unique match of measured and probing ports, users can apply this technique to measure a circuit with any configuration of impedance without worrying the discontinuity and fringing effect.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133539207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Lumped-Element Impedance Standards","authors":"Dylan F. Williams, D. Walker","doi":"10.1109/ARFTG.1998.327285","DOIUrl":"https://doi.org/10.1109/ARFTG.1998.327285","url":null,"abstract":"We measure the electrical parameters of commercial lumped-element impedance standards manufactured for the calibration of on-wafer probing systems. The standard¿s impedance depends not only on the standard itself, but also on probe placement, probe construction, and the reference calibration.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117234880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A New Measurement Technique and Characterization Tool for Push-Pull Circuit Design","authors":"C. Khandavalli, S. Chen","doi":"10.1109/ARFTG.1998.327288","DOIUrl":"https://doi.org/10.1109/ARFTG.1998.327288","url":null,"abstract":"The push-pull transistor is a 4-port device and so 4-port s-parameter data is needed to characterize it. In this paper, the authors will introduce a novel technique to measure s-parameters of a push-pull transistor. The technique uses TRL calibration method and employs a standard 2-port Vector Network Analyzer. The measured push-pull s-parameters are presented as a reduced 2-port s-parameter data set, which will enable the designer to use not only reflection, but transmission parameters as well in his design. So, push-pull circuits could be simulated for gain equalization, stability etc. and moreover could become a part of a larger simulation involving multiple stages. Finally, it allows push-pull circuits to be tuned and experimented with network analyzer displaying performance on a test bench in real-time.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128144624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Pulsed I-V Diagnostic Measurements for RF GaAs Devices","authors":"Eric M. Johnson","doi":"10.1109/ARFTG.1998.327282","DOIUrl":"https://doi.org/10.1109/ARFTG.1998.327282","url":null,"abstract":"This paper reports the results of characterization of RF GaAs devices using pulsed I-V measurements. Pulsed I-V measurements are used to measure and quantify dispersion in GaAs devices. Normalized figures of merit are used to compare devices of different size and technologies. Pulsed I-V and on-wafer load pull measurements on a population of devices known to exhibit a wide range of dispersion show relationships between dispersive effects and RF performance.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128468339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Metal-Insulator-Semiconductor Transmission Line Model","authors":"Dylan F. Williams","doi":"10.1109/ARFTG.1998.327280","DOIUrl":"https://doi.org/10.1109/ARFTG.1998.327280","url":null,"abstract":"This paper investigates the one-dimensional metal-insulator-semiconductor transmission line. It develops closed-form expressions for equivalent-circuit parameters, compares them to exact calculations, and explores their limitations. It also investigates the usual assumption of single-mode propagation and shows that, in certain fairly common circumstances, the fundamental mode of propagation becomes so lossy that it can no longer be considered to be the dominant propagating mode.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123000097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Development of RF Front-End for CDMA Mobile Communication Systems Based on IS-95","authors":"Xiaowei Zhu, Jianyi Zhou, W. Hong","doi":"10.1109/ARFTG.1998.327279","DOIUrl":"https://doi.org/10.1109/ARFTG.1998.327279","url":null,"abstract":"This paper presents the design and experiment of RF front-end module for Chinese CDMA mobile communication systems based on IS-95. The spread spectrum modulation/demodulation technique is employed in the CDMA system. The RF module is consists of I/Q quadrature modulator and demodulator, IF AGC amplifiers, up-converter, LNA/mixers, power amplifier and PLL local oscillators etc. The experimental results are shown.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128440034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"In-Line Multiport Calibration","authors":"Dylan F. Williams, D. Walker","doi":"10.1109/ARFTG.1998.327284","DOIUrl":"https://doi.org/10.1109/ARFTG.1998.327284","url":null,"abstract":"We present a multiport measurement procedure well suited to on-wafer measurement. It can correct multiport measurements with any conventional in-line calibration, including the thru-reflect-line calibration. We demonstrate the procedure in a four-port measurement system.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128355351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}