Pulsed I-V Diagnostic Measurements for RF GaAs Devices

Abstract

This paper reports the results of characterization of RF GaAs devices using pulsed I-V measurements. Pulsed I-V measurements are used to measure and quantify dispersion in GaAs devices. Normalized figures of merit are used to compare devices of different size and technologies. Pulsed I-V and on-wafer load pull measurements on a population of devices known to exhibit a wide range of dispersion show relationships between dispersive effects and RF performance.