标准硅技术中的50ghz互连设计

B. Kleveland, T. H. Lee, S.S. Wong
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引用次数: 64

摘要

共面波导的制造过程模拟了5到10个金属层的硅CMOS技术。在50 GHz下观察到的S21损耗为0.3dB/mm,是在Si/SiO2上标准Al互连中报道的最低S21损耗之一。最佳设计参数是反直觉的:在某些频率范围内,在低电阻率衬底上相对较窄的线可以实现最低的损耗。这在与CMOS技术完全兼容的传输线设计中得到了利用。采用商用4层Al/Cu CMOS技术对工艺仿真进行了校准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
50-GHz Interconnect Design in Standard Silicon Technology
Coplanar waveguides were fabricated in a process that emulates silicon CMOS technologies with 5 to 10 metal layers. The observed S21 loss of 0.3dB/mm at 50 GHz is among the lowest ever reported with standard Al interconnects on Si/SiO2. Optimum design parameters were counter-intuitive: in some frequency ranges, the lowest loss was achieved with relatively narrow lines over a low-resistivity substrate. This was exploited in the design of transmission lines that are fully compatible with a CMOS technology. The process emulation was calibrated with a commercial 4-layer Al/Cu CMOS technology.
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