{"title":"标准硅技术中的50ghz互连设计","authors":"B. Kleveland, T. H. Lee, S.S. Wong","doi":"10.1109/ARFTG.1998.327295","DOIUrl":null,"url":null,"abstract":"Coplanar waveguides were fabricated in a process that emulates silicon CMOS technologies with 5 to 10 metal layers. The observed S21 loss of 0.3dB/mm at 50 GHz is among the lowest ever reported with standard Al interconnects on Si/SiO2. Optimum design parameters were counter-intuitive: in some frequency ranges, the lowest loss was achieved with relatively narrow lines over a low-resistivity substrate. This was exploited in the design of transmission lines that are fully compatible with a CMOS technology. The process emulation was calibrated with a commercial 4-layer Al/Cu CMOS technology.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"155 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"64","resultStr":"{\"title\":\"50-GHz Interconnect Design in Standard Silicon Technology\",\"authors\":\"B. Kleveland, T. H. Lee, S.S. Wong\",\"doi\":\"10.1109/ARFTG.1998.327295\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Coplanar waveguides were fabricated in a process that emulates silicon CMOS technologies with 5 to 10 metal layers. The observed S21 loss of 0.3dB/mm at 50 GHz is among the lowest ever reported with standard Al interconnects on Si/SiO2. Optimum design parameters were counter-intuitive: in some frequency ranges, the lowest loss was achieved with relatively narrow lines over a low-resistivity substrate. This was exploited in the design of transmission lines that are fully compatible with a CMOS technology. The process emulation was calibrated with a commercial 4-layer Al/Cu CMOS technology.\",\"PeriodicalId\":208002,\"journal\":{\"name\":\"51st ARFTG Conference Digest\",\"volume\":\"155 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"64\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"51st ARFTG Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.1998.327295\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.1998.327295","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
50-GHz Interconnect Design in Standard Silicon Technology
Coplanar waveguides were fabricated in a process that emulates silicon CMOS technologies with 5 to 10 metal layers. The observed S21 loss of 0.3dB/mm at 50 GHz is among the lowest ever reported with standard Al interconnects on Si/SiO2. Optimum design parameters were counter-intuitive: in some frequency ranges, the lowest loss was achieved with relatively narrow lines over a low-resistivity substrate. This was exploited in the design of transmission lines that are fully compatible with a CMOS technology. The process emulation was calibrated with a commercial 4-layer Al/Cu CMOS technology.