推挽电路设计中一种新的测量技术和表征工具

C. Khandavalli, S. Chen
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引用次数: 1

摘要

推挽晶体管是一个4端口器件,因此需要4端口s参数数据来表征它。本文将介绍一种测量推挽型晶体管s参数的新技术。该技术采用TRL校准方法,采用标准的2端口矢量网络分析仪。测量的推挽s参数以简化的2端口s参数数据集的形式呈现,这将使设计人员不仅可以在设计中使用反射参数,还可以在设计中使用传输参数。因此,推挽电路可以模拟增益均衡,稳定性等,并且可以成为涉及多个阶段的更大模拟的一部分。最后,它允许对推挽电路进行调谐,并在网络分析仪上进行实验,实时显示测试台上的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A New Measurement Technique and Characterization Tool for Push-Pull Circuit Design
The push-pull transistor is a 4-port device and so 4-port s-parameter data is needed to characterize it. In this paper, the authors will introduce a novel technique to measure s-parameters of a push-pull transistor. The technique uses TRL calibration method and employs a standard 2-port Vector Network Analyzer. The measured push-pull s-parameters are presented as a reduced 2-port s-parameter data set, which will enable the designer to use not only reflection, but transmission parameters as well in his design. So, push-pull circuits could be simulated for gain equalization, stability etc. and moreover could become a part of a larger simulation involving multiple stages. Finally, it allows push-pull circuits to be tuned and experimented with network analyzer displaying performance on a test bench in real-time.
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