射频GaAs器件的脉冲I-V诊断测量

51st ARFTG Conference Digest Pub Date : 1998-06-01 DOI:10.1109/ARFTG.1998.327282

Eric M. Johnson

{"title":"射频GaAs器件的脉冲I-V诊断测量","authors":"Eric M. Johnson","doi":"10.1109/ARFTG.1998.327282","DOIUrl":null,"url":null,"abstract":"This paper reports the results of characterization of RF GaAs devices using pulsed I-V measurements. Pulsed I-V measurements are used to measure and quantify dispersion in GaAs devices. Normalized figures of merit are used to compare devices of different size and technologies. Pulsed I-V and on-wafer load pull measurements on a population of devices known to exhibit a wide range of dispersion show relationships between dispersive effects and RF performance.","PeriodicalId":208002,"journal":{"name":"51st ARFTG Conference Digest","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Pulsed I-V Diagnostic Measurements for RF GaAs Devices\",\"authors\":\"Eric M. Johnson\",\"doi\":\"10.1109/ARFTG.1998.327282\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the results of characterization of RF GaAs devices using pulsed I-V measurements. Pulsed I-V measurements are used to measure and quantify dispersion in GaAs devices. Normalized figures of merit are used to compare devices of different size and technologies. Pulsed I-V and on-wafer load pull measurements on a population of devices known to exhibit a wide range of dispersion show relationships between dispersive effects and RF performance.\",\"PeriodicalId\":208002,\"journal\":{\"name\":\"51st ARFTG Conference Digest\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"51st ARFTG Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.1998.327282\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.1998.327282","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文报道了使用脉冲I-V测量表征射频GaAs器件的结果。脉冲I-V测量用于测量和量化GaAs器件中的色散。标准化的性能指标用于比较不同尺寸和技术的设备。脉冲I-V和片上负载拉力测量在已知具有广泛色散范围的器件上显示色散效应和RF性能之间的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Pulsed I-V Diagnostic Measurements for RF GaAs Devices

This paper reports the results of characterization of RF GaAs devices using pulsed I-V measurements. Pulsed I-V measurements are used to measure and quantify dispersion in GaAs devices. Normalized figures of merit are used to compare devices of different size and technologies. Pulsed I-V and on-wafer load pull measurements on a population of devices known to exhibit a wide range of dispersion show relationships between dispersive effects and RF performance.

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51st ARFTG Conference Digest

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