发布求助
文献互助 智能选刊 最新文献

2010 International Workshop on Junction Technology Extended Abstracts最新文献

筛选
英文 中文
An analytical model for the subthreshold swing of double-gate MOSFETs 双栅mosfet亚阈值摆幅的解析模型
2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5475006
Zhihao Ding, Guangxi Hu, Jinglun Gu, Ran Liu, Lingli Wang, T. Tang
{"title":"An analytical model for the subthreshold swing of double-gate MOSFETs","authors":"Zhihao Ding, Guangxi Hu, Jinglun Gu, Ran Liu, Lingli Wang, T. Tang","doi":"10.1109/IWJT.2010.5475006","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5475006","url":null,"abstract":"A model for the Symmetric Double-Gate (SDG) n-MOSFET is presented. Poisson equation is solved analytically and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results are compared with Medici simulations, good agreement is observed. The subthreshold swing of an SDG MOSFET will be improved by increasing the channel length, by reducing either the silicon body thickness or the gate oxide thickness, and by increasing the silicon body doping concentration.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133540305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Contributionxc of carbon to growth of strained silicon, dopant activation and diffusion in silicon 碳对应变硅生长的贡献，掺杂剂在硅中的活化和扩散
2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474981
H. Itokawa
{"title":"Contributionxc of carbon to growth of strained silicon, dopant activation and diffusion in silicon","authors":"H. Itokawa","doi":"10.1109/IWJT.2010.5474981","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474981","url":null,"abstract":"C incorporation into Si and SiGe has become essential in modern high-performance CMOSFET technology. The reason is that C atom is markedly useful in growing strained Si film and controlling diffusion of dopant atoms in Si and SiGe layers. In this paper, contribution of C atoms to the growth of strained Si and SiGe films, the activation and the diffusion of B in Si are described. Interstitial C atoms inhibit an epitaxial growth of strained Si:C and SiGe films in both case for the C implantation followed by annealing and for the epitaxial growth of SiGe:C by RP-CVD. Suppressions of the localized change in strain caused by C incorporation and the localized C atoms successfully achieve a high-crystallinity strained Si:C and SiGe:C films with a high substitutional concentration. A B activation ratio in Si varies depending on incorporated C concentration in the wide range of C and B concentration. Furthermore, C atoms enhance the growth of stable B-containing clusters at a high B concentration region in Si, resulting in decrease in the B activation ratio in Si layer.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132024516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-dimensional cross-sectional doping profiling of boron-based low energy high dose ion implantations using Electron Holography technique 基于电子全息技术的硼基低能量高剂量离子注入的二维截面掺杂分析
2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474915
S. Qin, Zhouguang Wang, Du Li, Y. J. Hu, A. Mcteer, R. Burke, J. Guha
{"title":"Two-dimensional cross-sectional doping profiling of boron-based low energy high dose ion implantations using Electron Holography technique","authors":"S. Qin, Zhouguang Wang, Du Li, Y. J. Hu, A. Mcteer, R. Burke, J. Guha","doi":"10.1109/IWJT.2010.5474915","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474915","url":null,"abstract":"Electron holography, as a powerful method for two-dimensional (2D) doping profiling, is used to study 2D cross-sectional doping profiles of low energy high dose ion implantations including conventional beam-line <sup>11</sup>B implant and B<inf>2</inf>H<inf>6</inf> plasma doping (PLAD). It has been found that B<inf>2</inf>H<inf>6</inf> PLAD with −6kV voltage and 2×10<sup>16</sup>/cm<sup>2</sup> dose shows slightly deeper junction depth x<inf>j</inf>, both of the vertical x<inf>j</inf>(V), and lateral x<inf>j</inf>(L) and with slightly larger x<inf>j</inf>(L)/x<inf>j</inf>(V) ratio, than beam-line <sup>11</sup>B implant with 2keV energy and 5×10<sup>15</sup>/cm<sup>2</sup> dose. RTP process with 995°C/20s condition demonstrates higher thermal budget than 1015°C/spike condition — cause deeper x<inf>j</inf>, but with a similar x<inf>j</inf>(L)/x<inf>j</inf>(V) ratio. Good correlations among 2D Electron Holography dopant profiles, 2D dopant profile simulations, and 1D SIMS/ARXPS B profiles have been demonstrated. Very good correlation between 2D Electron Holography doping profiles and device parameters has been demonstrated.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129789579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced thermal measurements of high power LEDs by junction characteristic 通过结特性增强大功率led的热测量
2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474904
Chenning Ge, Shiwei Feng, Guangchen Zhang, Kaikai Ding, Peifeng Hu, H. Deng
{"title":"Enhanced thermal measurements of high power LEDs by junction characteristic","authors":"Chenning Ge, Shiwei Feng, Guangchen Zhang, Kaikai Ding, Peifeng Hu, H. Deng","doi":"10.1109/IWJT.2010.5474904","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474904","url":null,"abstract":"The measurements of junction temperature rise and thermal resistance of power LEDs by junction characteristic are proposed in this paper. The measured thermal resistance is corrected by the light-absorbing method. It is also proved that the physical meaning of the electrical average temperature rise of series LED array system is the arithmetic mean of the temperature rise of all sub-LEDs in the system. Therefore, a novel method to extract the temperature distribution of series LED systems is presented.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114221348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sub-20 nm abrupt USJ formation with long ms-flash with sub-2 nm dopant motion control 在sub- 2nm掺杂剂运动控制下，在sub- 20nm下突然形成的USJ具有长ms闪光
2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5475001
K. L. Lee, I. Lauer, P. Ronsheim, D. Neumayer, S. Mccoy, P. Kulkarni, J. Chan, S. Skordas, Y. Zhu, J. Gelpey, Dae-gyu Park
{"title":"Sub-20 nm abrupt USJ formation with long ms-flash with sub-2 nm dopant motion control","authors":"K. L. Lee, I. Lauer, P. Ronsheim, D. Neumayer, S. Mccoy, P. Kulkarni, J. Chan, S. Skordas, Y. Zhu, J. Gelpey, Dae-gyu Park","doi":"10.1109/IWJT.2010.5475001","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5475001","url":null,"abstract":"A new combination of long millisecond (1–2.5 ms) flash anneal at high peak temperature(1200–1300°C) and a new absorber with low deposition temperature (<400 C) have been developed to generate highly activated (Rs~ 500 ohm/sq), sub-20 nm abrupt (≤ 3 nm/decade) N+ and P+ junction. This new approach also provides sub-2nm N+ and P+ junction dopant motion control with multiple long ms-flash which are required for precision device centering and doping for 22 nm and beyond devices. High performance SOI CMOS had been achieved with single long ms-flash and matched well with CMOS created with spike RTA+laser. In addition, long ms-flash NFETs was found to need only ~ ½ of the B halo dose and exhibit no anomalous corner leakage which is sometime found in spike RTA+laser NFETs. These results demonstrate better B halo localization in NFETs with long ms-flash.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125927728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Metallic source and drain module for FDSOI MOSFETs applications 用于FDSOI mosfet应用的金属源极和漏极模块
2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474986
V. Carron, F. Nemouchi, Y. Morand, T. Poiroux, L. Hutin, M. Vinet, T. Billon, O. Faynot
{"title":"Metallic source and drain module for FDSOI MOSFETs applications","authors":"V. Carron, F. Nemouchi, Y. Morand, T. Poiroux, L. Hutin, M. Vinet, T. Billon, O. Faynot","doi":"10.1109/IWJT.2010.5474986","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474986","url":null,"abstract":"We report on the development of metallic source and drain module for FDSOI MOSFETs including lateral salicidation of the channel edges and dopant segregation technique. Metal barrier type (TiN or Ti/TiN), optimized doping conditions, controlled PtSi penetration below spacers and suitable cleaning of the silicide surface lead to very low specific contact resistivity values (down to 0.1Ωµm<sup>2</sup>). We thus demonstrate metallic source and drain pMOSFETs with promising electrical behavior suitable for high performance applications (Ion=345µA.µm<sup>−1</sup> and Ioff=30nA.µm<sup>−1</sup> at −s1V for 50nm gate length). Using a similar approach, we also demonstrate state-of-the-art nMOSFETs fabricated with not yet optimized Er and Yb salicidation processes.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130306790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Device performance and yield — A new focus for ion implantation 器件性能和产率——离子注入的新焦点
2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5475003
A. Renau
{"title":"Device performance and yield — A new focus for ion implantation","authors":"A. Renau","doi":"10.1109/IWJT.2010.5475003","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5475003","url":null,"abstract":"Recent innovations in ion implantation technology that overcome scaling barriers at 32nm/22nm are reviewed. Some of the hardware improvements will be discussed, but the main focus will be on the process and device data that demonstrates their advantages. These innovations include a cryogenic implant capability that enables a significant reduction in implantation induced crystal damage, molecular implants that show device performance improvements and that use standard ion sources, and various approaches that improve implant performance, particularly when diffusion-less anneal is used.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125378528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Er inserted Ni silicide metal source/drain for Schottky MOSFETs 肖特基mosfet的Er插入硅化镍金属源极/漏极
2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474989
P. Ahmet, W. Hosoda, K. Noguchi, Y. Ohishi, K. Kakushima, Kazuo Tsutsui, H. Iwai
{"title":"Er inserted Ni silicide metal source/drain for Schottky MOSFETs","authors":"P. Ahmet, W. Hosoda, K. Noguchi, Y. Ohishi, K. Kakushima, Kazuo Tsutsui, H. Iwai","doi":"10.1109/IWJT.2010.5474989","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474989","url":null,"abstract":"A Schottky barrier height modulation technique for achieving a low Schottky barrier height in Ni silicide metal source/drain by Er layer insertion was reviewed. The effectiveness and possibility of the technique was demonstrated by fabricating Schottky barrier source/drain MOSFETs onto both bulk and SOI substrates.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122167132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physical and electrical characterization of junction between single-layer graphene (SLG) and Ti prepared by various processes 不同工艺制备的单层石墨烯(SLG)与钛之间结的物理和电学特性
2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5475005
W. J. Liu, H. Y. Yu, B. Tay, S. Xu, Y. Wang, H. Hu, Z. Shen, J. Wei, M. F. Li
{"title":"Physical and electrical characterization of junction between single-layer graphene (SLG) and Ti prepared by various processes","authors":"W. J. Liu, H. Y. Yu, B. Tay, S. Xu, Y. Wang, H. Hu, Z. Shen, J. Wei, M. F. Li","doi":"10.1109/IWJT.2010.5475005","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5475005","url":null,"abstract":"The junction contact characteristics between single layer graphene (SLG) and Ti, where Ti is prepared by various deposition processes, are investigated physically (via Raman) and electrically (via 2-point or 4-point probe measurement and residual resistance methods). For Ti deposited by electron beam evaporation (EBM) process, there are no noticeable Raman shift and weak D band in Ti junction with SLG. On the other hand, D band and Raman shift becomes visible when Ti is prepared using sputter process, indicating the disorder related defects and the change of lattice constant in graphene. On the electrical property, it is observed that the contact resistance of Ti/graphene prepared by sputter process is larger than that by EBM process, which can be attributed to process induced defect in graphene.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124948660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-reversed-junction LDMOST with very high breakdown voltage per unit length 具有非常高单位长度击穿电压的多反结LDMOST
2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5475004
Jianbing Cheng, Bo Zhang, Zhaoji Li, Yufeng Guo, Shu Yu
{"title":"Multi-reversed-junction LDMOST with very high breakdown voltage per unit length","authors":"Jianbing Cheng, Bo Zhang, Zhaoji Li, Yufeng Guo, Shu Yu","doi":"10.1109/IWJT.2010.5475004","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5475004","url":null,"abstract":"A novel non-uniform multi-reversed-junction power MOSFET is presented in this paper. The high and uniform electric field in substrate is achieved due to modulating from space charges in the buried layers during operation in the blocking mode, and the breakdown voltage is improved considerably. A detailed study of the influence of various important parameters on blocking characteristics was carried out. Simulation results show that the breakdown voltage per unit length of the presented device is increased from 7V/μm of the conventional power MOSFET to 16.3V/μm with nearly same drift region and substrate parameters.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134549545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信