2010 International Workshop on Junction Technology Extended Abstracts最新文献_第6页

Improvement of productivity by cluster ion implanter: CLARIS 簇离子注入剂提高生产效率:CLARIS

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474977

M. Tanjyo, N. Hamamoto, S. Umisedo, Y. Koga, H. Une, N. Maehara, Y. Kawamura, Y. Hashino, Y. Nakashima, M. Hashimoto, T. Nagayama, H. Onoda, N. Nagai, T. Horsky, S. Hahto, D. Jacobson

引用次数: 0

A simulation study of a novel dual-channel body-tied MOSFET 新型双通道体系MOSFET的仿真研究

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474898

Yi-Hsuan Fan, Jyi-Tsong Lin, Y. Eng, Yu-Che Chang, Cheng-Hsin Chen, Kuan-Yu Lu, Chih-Hsuan Tai

引用次数: 0

A defect behavior in boron shallow junction formation of Si under low-temperature pre-anneal and non-melt-laser anneal 低温预退火和非熔融激光退火下硅硼浅结形成的缺陷行为

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474994

Suhei Hara, Yusuke Shigenaga, S. Matsumoto, G. Fuse, S. Sakuragi

引用次数: 0

Characterization of a body-tied vertical MOSFET 体系垂直MOSFET的特性

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474896

Kuan-Yu Lu, Jyi-Tsong Lin, Y. Eng, Chih-Hsuan Tai, Cheng-Hsin Chen, Yu-Che Chang, Yi-Hsuan Fan

引用次数: 1

Proposal of a new electronic structure model of Ohmic contacts for the future metallic source and drain 提出一种新的欧姆触点电子结构模型，用于未来的金属源极和漏极

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474985

Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, K. Shiraishi

{"title":"Proposal of a new electronic structure model of Ohmic contacts for the future metallic source and drain","authors":"Y. Takada, M. Muraguchi, T. Endoh, S. Nomura, K. Shiraishi","doi":"10.1109/IWJT.2010.5474985","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474985","url":null,"abstract":"Recently, metallic source and drain is widely discussed with LSIs scaling trend. For this technology, it is essential to fabricate low resistive Ohmic contact between electrodes and the channel materials. However, it is expected that precise Schottky barrier height control for obtaining Ohmic contact is technologically difficult. One of the main reasons is that Fermi level pinning phenomena takes place when a metal/semiconductor interface is formed. Recently, we have proposed a new Ohmic contact model in which resonant tunneling through the defect levels in a Schottky barrier is an origin of Ohmic characteristics. In this paper, we have considered our propose Ohmic contact model which is compatible with interface physics concepts, such as a charge neutrality level which can describe essential properties of metal/semiconductor interfaces. We calculate the current-voltage characteristics based on our proposed model up to the operating temperature of the integrated circuits. Our calculated results show that our proposed model can reproduce linear Ohmic I-V characteristics from room temperature to the operation temperature of the integrated circuits.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116358152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimum design methodology for thermally stable multi-finger power SiGe HBTs 热稳定多指功率SiGe hbt的优化设计方法

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474901

D. Jin, W. Zhang, B. L. Guan, L. Chen, N. Hu, Y. Xiao, R. Wang

引用次数: 0

Study on palladium germanide on Ge-on-Si substrate for nanoscale Ge channel Schottky barrier MOSFETs 锗沟道肖特基势垒mosfet衬底上锗化钯的研究

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474982

Se-Kyung Oh, Ying-Ying Zhang, H. Shin, I. Han, H. Kwon, Byoungchul Park, Sang-Uk Park, J. Bok, Ga-Won Lee, Jin-Suk Wang, H. Lee

引用次数: 1

Improved electrochemical etching for the formation of 3D p-n junction 三维p-n结形成的改进电化学蚀刻

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI: 10.1109/IWJT.2010.5474908

Jing Shi, P. Ci, Fei Wang, Huayan Zhang, Lianwei Wang

引用次数: 0

Flexibly-Shaped-Pulse flash lamp annealing with assisted temperature control (FSP-FLAplus) to realize a wide range of annealing conditions 带辅助温度控制(FSP-FLAplus)的柔性脉冲闪光灯退火，可实现广泛的退火条件

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-01 DOI: 10.1109/IWJT.2010.5474995

S. Kato, T. Onizawa, T. Aoyama, K. Ikeda, Y. Ohji

{"title":"Flexibly-Shaped-Pulse flash lamp annealing with assisted temperature control (FSP-FLAplus) to realize a wide range of annealing conditions","authors":"S. Kato, T. Onizawa, T. Aoyama, K. Ikeda, Y. Ohji","doi":"10.1109/IWJT.2010.5474995","DOIUrl":"https://doi.org/10.1109/IWJT.2010.5474995","url":null,"abstract":"Millisecond annealing (MSA), such as flash lamp annealing (FLA) and laser spike annealing, is used for dopant activation of ultra-shallow junctions (USJ) in scaled complimentary metal-oxide-semiconductor (CMOS) devices. This is because lower sheet resistance (Rs) and less dopant diffusion are achieved with MSA and these are crucial requirements for minimizing the junction depth (Xj) in state-of-the-art CMOS [1–5]. In FLA the sample is irradiated for a few milliseconds with a Xe-lamp after pre-heating to 500°C or more. The assisted heating is done either using a resistive heater or by irradiation with a halogen lamp. With lamp heating, the assisted temperature (TA) range is from 500 to 1000°C compared with from 300 to 600°C using a resistive heater. In addition, with lamp assisted heating the temperature profile can be controlled to the second order, similar to spike rapid thermal annealing (sRTA). Thus, we can use higher TA with less dopant diffusion, and higher pre-heat temperatures enable higher peak temperatures during Xe-lamp irradiation. We also used a Flexibly-Shaped-Pulse (FSP) system to control the annealing time and temperature [6–10]. By combining FSP technology with lamp assisted heating, we expect to be able to have control over a wide-range of annealing times and temperatures. In addition, this combination may produce a synergistic effect on device performance. In this report, we examine, first, the effects of high assisted temperatures. Then, we demonstrate the excellent potential of combining FSP technology and lamp assisted heating on device performance.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129371448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1