新型双通道体系MOSFET的仿真研究

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI:10.1109/IWJT.2010.5474898

Yi-Hsuan Fan, Jyi-Tsong Lin, Y. Eng, Yu-Che Chang, Cheng-Hsin Chen, Kuan-Yu Lu, Chih-Hsuan Tai

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引用次数: 0

摘要

在这项工作中，提出了一种称为双通道体系(DCBT) MOSFET的新型器件。数值模拟结果表明，与传统的非体系直流结构相比，DCBT MOSFET在保持理想的短沟道特性的同时，可将顶部和底部沟道的晶格温度分别降低51.6%和53.8%。

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A simulation study of a novel dual-channel body-tied MOSFET

In this work, a novel device called dual-channel body-tied (DCBT) MOSFET is proposed. According to numerical simulations, the DCBT MOSFET can reduce the lattice temperature about 51.6% in top and 53.8% in bottom channel, respectively, while maintain the desirable short-channel characteristics, compared with the conventional non-body-tied DC structure.

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来源期刊

2010 International Workshop on Junction Technology Extended Abstracts

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