A defect behavior in boron shallow junction formation of Si under low-temperature pre-anneal and non-melt-laser anneal

Physical relationship among regrowth of damaged layer, dopant activation and dopant diffusion has been investigated in the formation of boron shallow junction of Si under low-temperature pre-annealing (PA) and non-melt laser annealing (LA). The degree of crystal regrowth was adjusted with pre-annealing time. It is clarified that the regrowth of amorphous Si layer up to the junction depth has an important key to realize the low leakage current and to suppress the unnecessary B diffusion after LA.